Indium Doped ZnO Films Prepared by RF Magnetron Sputtering: Effect of Substrate Temperature on the Strain-Induced Band Gap

2012 ◽  
Vol 12 (3) ◽  
pp. 2503-2508 ◽  
Author(s):  
Georgi P. Daniel ◽  
David Devraj Kumar ◽  
V. B. Justinvictor ◽  
Prabitha B. Nair ◽  
K. Joy ◽  
...  
2007 ◽  
Vol 515 (24) ◽  
pp. 8785-8788 ◽  
Author(s):  
Jinzhong Wang ◽  
Vincent Sallet ◽  
François Jomard ◽  
Ana M. Botelho do Rego ◽  
Elangovan Elamurugu ◽  
...  

2010 ◽  
Vol 663-665 ◽  
pp. 1293-1297 ◽  
Author(s):  
Yue Bo Wu ◽  
Sheng Lei ◽  
Zhe Wang ◽  
Ru Hai Zhao ◽  
Lei Huang ◽  
...  

The Al-doped ZnO (AZO) films were deposited on the glass substrates by RF magnetron sputtering at different substrate temperatures. The effect of substrate temperature on the structural, optical, and electrical properties of AZO films was investigated. The results indicate each of the films has a preferential c-axis orientation. The grain size increases with substrate temperature increasing. All the films exhibit a high transmittance in visible region and have sharp ultraviolet absorption characteristics. The resistivity decreases with substrate temperature increasing up to 250oC, then increases for higher temperature.


2008 ◽  
Vol E91-C (10) ◽  
pp. 1649-1652 ◽  
Author(s):  
K. MUTO ◽  
S. ODASHIMA ◽  
N. NASU ◽  
O. MICHIKAMI

2004 ◽  
Vol 221 (1-4) ◽  
pp. 32-37 ◽  
Author(s):  
Woong Lee ◽  
Deuk-Kyu Hwang ◽  
Min-Chang Jeong ◽  
Myeongkyu Lee ◽  
Min-Seok Oh ◽  
...  

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