Charge Carrier Transport and Digital Data Transmission Performance In Sub-20 nm Diameter Indium Antimonide Nanowires

2012 ◽  
Vol 12 (3) ◽  
pp. 2278-2286
Author(s):  
Ali Bilge Guvenc ◽  
Miroslav Penchev ◽  
Jiebin Zhong ◽  
Cengiz S. Ozkan ◽  
Mihrimah Ozkan
Keyword(s):  
Charge Carrier ◽  
Indium Antimonide ◽  
Data Transmission ◽  
Carrier Transport ◽  
Digital Data ◽  
Charge Carrier Transport ◽  
Transmission Performance ◽  
20 Nm

Data transmission performance of CVD grown sub-20 nm indium antimonide nanowires

2011 ◽  
Author(s):  
Ali B. Guvenc ◽  
Miroslav Penchev ◽  
Jiebin Zhong ◽  
Cengiz Ozkan ◽  
Mihrimah Ozkan
Keyword(s):  
Indium Antimonide ◽  
Data Transmission ◽  
Transmission Performance ◽  
20 Nm

Binary Data Transmission Performance of Sub-20 nm Indium Antimonide Nanowires

2011 ◽  
Vol 1350 ◽  
Author(s):  
Ali Bilge Guvenc ◽  
Miroslav Penchev ◽  
Jiebin Zhong ◽  
Cengiz Ozkan ◽  
Mihrimah Ozkan
Keyword(s):  
Indium Antimonide ◽  
Data Transmission ◽  
Binary Data ◽  
Impedance Matching ◽  
Chemical Vapor ◽  
Crystal Defects ◽  
Transmission Performance ◽  
Data Rates ◽  
Parasitic Parameters ◽  
20 Nm

ABSTRACTWe investigated the data transmission performance of indium antimonide (InSb) nanowires (NWs) synthesized on InSb (100) substrate using chemical vapor deposition (CVD) having diameters of 20 nm and below. The results indicate that the data transmission performance of NWs suffer from low mobility values on the order of 10-to-15 cm2V-1s-1 because of the scattering due to their small diameters, crystal defects and oxidation occurs during growth and cooling. The 20 nm NWs can sustain data rates up to 5 mega bits per second (Mbps) without any impedance matching and de-embedding of the parasitic parameters coming from the measurement system with a bit error rate (BER) level of 10-8. The data rate is directly proportional to the diameter of the NWs.

Limits of Charge Carrier Transport in Halide Perovskites Revealed by Optical-Pump Terahertz-Probe Spectroscopy

2019 ◽  
Author(s):  
Hannes Hempel ◽  
Andrei Petsiu ◽  
Martin Stolterfoht ◽  
Pascal Becker ◽  
Dieter Neher ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Charge Carrier Transport ◽  
Optical Pump ◽  
Halide Perovskites ◽  
Probe Spectroscopy

scholarly journals Impact of Tortuosity on Charge-Carrier Transport in Organic Bulk Heterojunction Blends

2017 ◽  
Vol 8 (5) ◽  
Author(s):  
Michael C. Heiber ◽  
Klaus Kister ◽  
Andreas Baumann ◽  
Vladimir Dyakonov ◽  
Carsten Deibel ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Bulk Heterojunction ◽  
Charge Carrier Transport

Charge Carrier Transport in Phenazine

1979 ◽  
Vol 53 (3-4) ◽  
pp. 271-280 ◽  
Author(s):  
S. C. Mathur ◽  
B. Kumar ◽  
Keya Roy
Keyword(s):  
Charge Carrier ◽  
Carrier Transport ◽  
Charge Carrier Transport

Electrical Characterization of the Graphene-SiC Heterojunction

2012 ◽  
Vol 717-720 ◽  
pp. 641-644
Author(s):  
Travis J. Anderson ◽  
Karl D. Hobart ◽  
Luke O. Nyakiti ◽  
Virginia D. Wheeler ◽  
Rachael L. Myers-Ward ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Charge Carrier ◽  
Graphene Sheet ◽  
Carrier Transport ◽  
Electrical Characterization ◽  
Epitaxial Graphene ◽  
Charge Carrier Transport ◽  
Semiconductor System ◽  
Significant Research

Graphene, a 2D material, has motivated significant research in the study of its in-plane charge carrier transport in order to understand and exploit its unique physical and electrical properties. The vertical graphene-semiconductor system, however, also presents opportunities for unique devices, yet there have been few attempts to understand the properties of carrier transport through the graphene sheet into an underlying substrate. In this work, we investigate the epitaxial graphene/4H-SiC system, studying both p and n-type SiC substrates with varying doping levels in order to better understand this vertical heterojunction.

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