Characterizations of Ga-Doped ZnO Nanowires Depending on Growth Temperature and Target-Substrate Distance in Hot-Walled Pulsed Laser Deposition

2012 ◽  
Vol 12 (4) ◽  
pp. 3559-3562 ◽  
Author(s):  
Kyoungwon Kim ◽  
Dong-Hoon Park ◽  
Pulak Chandra Debnath ◽  
Dong-Yun Lee ◽  
Sangsig Kim ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Growth Temperature ◽  
Pulsed Laser ◽  
Zno Nanowires ◽  
Laser Deposition ◽  
Substrate Distance ◽  
Doped Zno

Influence of growth temperature on the properties of Al-doped ZnO thin film fabricated by pulsed laser deposition

2013 ◽  
Author(s):  
Yang Zhou ◽  
Hongfang Zheng ◽  
Lei Zhang ◽  
Yingcai Peng ◽  
Qingxun Zhao ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Growth Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Film ◽  
Doped Zno

Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition

2007 ◽  
Vol 18 (45) ◽  
pp. 455707 ◽  
Author(s):  
B Q Cao ◽  
M Lorenz ◽  
A Rahm ◽  
H von Wenckstern ◽  
C Czekalla ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Zno Nanowires ◽  
Laser Deposition ◽  
Doped Zno

Synthesis and Structural-Optical Properties of Ga-Doped ZnO Nanowires by Hot-Walled Pulsed Laser Deposition Method

2012 ◽  
Vol 12 (5) ◽  
pp. 4173-4176 ◽  
Author(s):  
Kyoungwon Kim ◽  
Dong-Yun Lee ◽  
Dong-Hoon Park ◽  
Sangsig Kim ◽  
Sang Yeol Lee
Keyword(s):  
Optical Properties ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Zno Nanowires ◽  
Laser Deposition ◽  
Deposition Method ◽  
Doped Zno

A Study of High Quality Al-doped ZnO Thin Films Grown at Low Temperature by Pulsed Laser Deposition

2007 ◽  
Vol 1035 ◽  
Author(s):  
Ram Gupta ◽  
K. Ghosh ◽  
S. R. Mishra ◽  
P. K. Kahol
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Growth Temperature ◽  
Quartz Substrate ◽  
Resistivity Measurement ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Doped Zno

AbstractHighly conducting and transparent Al-doped ZnO (AZO) thin films, which are oriented along c-axis and have wurtzite structure, were grown on quartz substrate at low temperature by pulsed laser deposition. The techniques of x-ray diffraction (XRD), Raman spectroscopy, atomic force microscopy (AFM), optical transmission spectroscopy (OTS), electrical resistivity, and Hall Effect were used to study the effect of growth temperature and oxygen pressure on the structural, electrical transport, and optical properties of these films. The optical transparency in all the films is high and does not change much with oxygen pressure and growth temperature. However, electrical parameters such as resistivity, carrier concentration, and mobility strongly depend on both oxygen pressure and growth temperature. The temperature dependence resistivity measurement indicates semiconducting behavior of all the films. A detailed study indicates that the films which are highly conducting and transparent correspond to an optimum temperature of 200 °C and an oxygen pressure of 5 × 10−7 bar. Higher transmittance of the AZO films compared with pure ZnO and ITO and comparable mobility make us to suggest that Al-doped ZnO is an excellent material for optoelectronic applications.

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