Temperature Dependent Photoluminescence Properties of InAs/InP Quantum Dashes Subjected to Low Energy Phosphorous Ion Implantation and Subsequent Annealing

2011 ◽  
Vol 11 (10) ◽  
pp. 9251-9255 ◽  
Author(s):  
M. H. Hadj Alouane ◽  
B. Ilahi ◽  
H. Maaref ◽  
B. Salem ◽  
V. Aimez ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Low Energy ◽  
Subsequent Annealing ◽  
Photoluminescence Properties ◽  
Temperature Dependent ◽  
Quantum Dashes ◽  
Temperature Dependent Photoluminescence

scholarly journals Optimum technological modes of ion implantation and subsequent annealing for formation of thin nanosized silicide films

2021 ◽  
Vol 264 ◽  
pp. 05037
Author(s):  
Ilkhom Bekpulatov ◽  
Ilkhom Turapov ◽  
Sevara Abraeva ◽  
Jakhongir Normuminov
Keyword(s):  
Electron Diffraction ◽  
Ion Implantation ◽  
Electron Spectroscopy ◽  
Surface Region ◽  
Low Energy ◽  
Subsequent Annealing ◽  
Metal Silicide ◽  
Slow Electron ◽  
Near Surface ◽  
Nanoscale Films

Using the methods of electron spectroscopy and slow electron diffraction, we studied the processes of the formation of nanosized metal silicide films in the near-surface region of Si (111) and Si (100) during low-energy implantation of Ba ions and alkaline elements. The optimal technological modes of ion implantation and subsequent annealing for the formation of thin nanoscale films of silicides were determined. The type of surface superstructures of thin silicide films has been established.

scholarly journals Temperature-dependent photoluminescence properties of quaternary ZnAgInS quantum dots

2016 ◽  
Vol 24 (17) ◽  
pp. 19506 ◽  
Author(s):  
Ping Zhou ◽  
Xiaosong Zhang ◽  
Xiaojuan Liu ◽  
Jianping Xu ◽  
Lan Li
Keyword(s):  
Quantum Dots ◽  
Photoluminescence Properties ◽  
Temperature Dependent ◽  
Temperature Dependent Photoluminescence
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