Aluminum Oxide Formation at Al/La1−xSrxMnO3 Interface: A Computational Study for Resistance Random Access Memory Applications

2011 ◽  
Vol 11 (1) ◽  
pp. 339-343 ◽  
Author(s):  
Nodo Lee ◽  
Yves Lansac ◽  
Yun Hee Jang
Keyword(s):  
Aluminum Oxide ◽  
Computational Study ◽  
Random Access ◽  
Random Access Memory ◽  
Oxide Formation ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Memory Applications

Analysis of copper ion filaments and retention of dual-layered devices for resistance random access memory applications

2009 ◽  
Vol 86 (7-9) ◽  
pp. 1929-1932 ◽  
Author(s):  
Jaesik Yoon ◽  
Joonmyoung Lee ◽  
Hyejung Choi ◽  
Ju-Bong Park ◽  
Dong-jun Seong ◽  
...  
Keyword(s):  
Copper Ion ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory ◽  
Memory Applications

Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory

2012 ◽  
Vol 112 (3) ◽  
pp. 033711 ◽  
Author(s):  
Seisuke Nigo ◽  
Masato Kubota ◽  
Yoshitomo Harada ◽  
Taisei Hirayama ◽  
Seiichi Kato ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Conduction Band ◽  
Oxygen Vacancies ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory

Formation of Ge[sub 2]Sb[sub 2]Te[sub 5]–TiO[sub x] Nanostructures for Phase Change Random Access Memory Applications

2010 ◽  
Vol 13 (2) ◽  
pp. K8 ◽  
Author(s):  
Dongbok Lee ◽  
Sung-Soo Yim ◽  
Ho-Ki Lyeo ◽  
Min-Ho Kwon ◽  
Dongmin Kang ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Memory Applications

Effects of Thickness on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sputtering

2014 ◽  
Vol 941-944 ◽  
pp. 1275-1278
Author(s):  
Hua Wang ◽  
Zhi Da Li ◽  
Ji Wen Xu ◽  
Yu Pei Zhang ◽  
Ling Yang ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Random Access ◽  
Random Access Memory ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Si Substrate ◽  
Access Memory ◽  
Resistive Switching Behavior ◽  
Bipolar Resistive Switching ◽  
Resistance Random Access Memory

ZnMn2O4films for resistance random access memory (RRAM) were fabricated on p-Si substrate by magnetron sputtering. The effects of thickness onI-Vcharacteristics, resistance switching behavior and endurance characteristics of ZnMn2O4films were investigated. The ZnMn2O4films with a structure of Ag/ZnMn2O4/p-Si exhibit bipolar resistive switching behavior. With the increase of thickness of ZnMn2O4films from 0.83μm to 2.3μm, both theVONand the number of stable repetition switching cycle increase, but theRHRS/RLRSratio decrease, which indicated that the ZnMn2O4films with a thickness of 0.83μm has the biggestRHRS/RLRSratio and the lowestVONandVOFF, but the worst endurance characteristics.

Resistance random access memory switching mechanism

2007 ◽  
Vol 101 (2) ◽  
pp. 024517 ◽  
Author(s):  
Sheng T. Hsu ◽  
Tingkai Li ◽  
Nobuyoshi Awaya
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Switching Mechanism ◽  
Memory Switching ◽  
Resistance Random Access Memory

Performance and characteristics of double layer porous silicon oxide resistance random access memory

2013 ◽  
Vol 102 (25) ◽  
pp. 253509 ◽  
Author(s):  
Tsung-Ming Tsai ◽  
Kuan-Chang Chang ◽  
Rui Zhang ◽  
Ting-Chang Chang ◽  
J. C. Lou ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Double Layer ◽  
Silicon Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Resistance Random Access Memory
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