Effect of InAlGaAs and GaAs Combination Barrier Thickness on the Duration of Dot Formation in Different Layers of Stacked InAs/GaAs Quantum Dot Heterostructure Grown by MBE

N. Halder; J. Suseendran; S. Chakrabarti; Miriam Herrera; Marta Bonds; Nigel D. Browning

doi:10.1166/jnn.2010.2380

Effect of InAlGaAs and GaAs Combination Barrier Thickness on the Duration of Dot Formation in Different Layers of Stacked InAs/GaAs Quantum Dot Heterostructure Grown by MBE

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2010.2380 ◽

2010 ◽

Vol 10 (8) ◽

pp. 5202-5206 ◽

Cited By ~ 2

Author(s):

N. Halder ◽

J. Suseendran ◽

S. Chakrabarti ◽

Miriam Herrera ◽

Marta Bonds ◽

...

Keyword(s):

Quantum Dot ◽

Barrier Thickness ◽

Gaas Quantum Dot

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A detailed investigation of strain patterning effect on bilayer InAs/GaAs quantum dot with varying GaAs barrier thickness

10.1117/12.2212767 ◽

2016 ◽

Cited By ~ 3

Author(s):

B. Tongbram ◽

N. Sehara ◽

J. Singhal ◽

D. P. Panda ◽

S. Chakrabarti

Keyword(s):

Quantum Dot ◽

Barrier Thickness ◽

Gaas Barrier ◽

Gaas Quantum Dot

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Effect of barrier thickness on structural, optical, and spectral behaviors of vertically strain coupled InAs/GaAs quantum dot infrared photodetectors

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena ◽

10.1116/1.4894461 ◽

2014 ◽

Vol 32 (5) ◽

pp. 051208 ◽

Cited By ~ 8

Author(s):

Hemant Ghadi ◽

Akshay Agarwal ◽

Sourav Adhikary ◽

Binita Tongbram ◽

Arjun Mandal ◽

...

Keyword(s):

Quantum Dot ◽

Infrared Photodetectors ◽

Barrier Thickness ◽

Quantum Dot Infrared Photodetectors ◽

Gaas Quantum Dot

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Effects of ex situ annealing on quaternary alloy (InAlGaAs) capped InAs/GaAs quantum dot heterostructures on optimization of optoelectronic and structural properties with variation in growth rate, barrier thickness, and seed quantum dot monolayer coverage

Superlattices and Microstructures ◽

10.1016/j.spmi.2013.03.013 ◽

2013 ◽

Vol 58 ◽

pp. 101-119 ◽

Cited By ~ 9

Author(s):

A. Mandal ◽

U. Verma ◽

S. Chakrabarti

Keyword(s):

Growth Rate ◽

Quantum Dot ◽

Structural Properties ◽

Quaternary Alloy ◽

Ex Situ ◽

Barrier Thickness ◽

Gaas Quantum Dot ◽

Monolayer Coverage

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The impact of growth rate and barrier thickness on the thermal stability of photoluminescence for coupled InAs/GaAs quantum dot heterostructures with quaternary(InAlGaAs) capping

10.1117/12.907867 ◽

2012 ◽

Author(s):

A. Mandal ◽

U. Verma ◽

S. Chakrabarti

Keyword(s):

Thermal Stability ◽

Growth Rate ◽

Quantum Dot ◽

Barrier Thickness ◽

Gaas Quantum Dot ◽

The Impact ◽

Thermal Stability Of

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The impact of monolayer coverage, barrier thickness and growth rate on the thermal stability of photoluminescence of coupled InAs/GaAs quantum dot hetero-structure with quaternary capping of InAlGaAs

Materials Research Bulletin ◽

10.1016/j.materresbull.2011.12.047 ◽

2012 ◽

Vol 47 (3) ◽

pp. 551-556 ◽

Cited By ~ 12

Author(s):

A. Mandal ◽

U. Verma ◽

N. Halder ◽

S. Chakrabarti

Keyword(s):

Thermal Stability ◽

Growth Rate ◽

Quantum Dot ◽

Barrier Thickness ◽

Hetero Structure ◽

Gaas Quantum Dot ◽

The Impact ◽

Monolayer Coverage ◽

Thermal Stability Of

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Effect of InAlGaAs and GaAs combination barrier thickness on the stacking of InAs/GaAs quantum dot heterostructure grown by MBE

IOP Conference Series Materials Science and Engineering ◽

10.1088/1757-899x/6/1/012006 ◽

2009 ◽

Vol 6 ◽

pp. 012006 ◽

Cited By ~ 1

Author(s):

Suseendran J ◽

N Halder ◽

S Chakrabarti ◽

T D Mishima

Keyword(s):

Quantum Dot ◽

Barrier Thickness ◽

Gaas Quantum Dot

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Self-Assembled (In,Ga)As/GaAs Quantum-Dot Nanostructures: Strain Distribution and Electronic Structure

10.21236/ada395570 ◽

2001 ◽

Cited By ~ 1

Author(s):

E. Towe ◽

G. Stoleru ◽

D. Pal

Keyword(s):

Electronic Structure ◽

Quantum Dot ◽

Strain Distribution ◽

Self Assembled ◽

Gaas Quantum Dot

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Realizable Single Photon Beam Splitter Based on Classical-Assisted Cyclic Transition of InGaAs/GaAs Quantum Dot Coupled to the T-Splitter Silver Nanowire

Plasmonics ◽

10.1007/s11468-021-01459-w ◽

2021 ◽

Author(s):

Myong-Chol Ko ◽

Nam-Chol Kim ◽

Su-Ryon Ri ◽

Ju-Song Ryom ◽

Song-Gun Kim ◽

...

Keyword(s):

Quantum Dot ◽

Beam Splitter ◽

Single Photon ◽

Silver Nanowire ◽

Photon Beam ◽

Cyclic Transition ◽

Gaas Quantum Dot

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Theoretical study of excitons in GaAs quantum dot molecules obtained by nanoholes filling

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2020.105614 ◽

2021 ◽

Vol 124 ◽

pp. 105614

Author(s):

S. Tilouche ◽

A. Sayari ◽

M. Omri ◽

S. Souilem ◽

L. Sfaxi ◽

...

Keyword(s):

Quantum Dot ◽

Theoretical Study ◽

Quantum Dot Molecules ◽

Gaas Quantum Dot

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Single-Period InAs–GaAs Quantum-Dot Infrared Photodetectors

IEEE Photonics Technology Letters ◽

10.1109/lpt.2008.928847 ◽

2008 ◽

Vol 20 (18) ◽

pp. 1575-1577

Author(s):

Shu-Ting Chou ◽

Shih-Yen Lin ◽

Chi-Che Tseng ◽

Yi-Hao Chen ◽

Cheng-Nan Chen ◽

...

Keyword(s):

Quantum Dot ◽

Infrared Photodetectors ◽

Single Period ◽

Quantum Dot Infrared Photodetectors ◽

Gaas Quantum Dot

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