Work Function Increase of Al-Doped ZnO Thin Films by B+ Ion Implantation

2007 ◽  
Vol 7 (11) ◽  
pp. 4077-4080 ◽  
Author(s):  
Sang-Jin Hong ◽  
Gi-Seok Heo ◽  
Jong-Woon Park ◽  
In-Hwan Lee ◽  
Bum-Ho Choi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Work Function ◽  
Oxygen Vacancies ◽  
Defect Density ◽  
Transparent Conducting Oxide ◽  
Doping Profile ◽  
Ion Energy ◽  
Transparent Conducting ◽  
Azo Thin Film ◽  
Doped Zno

The work function of an Al-doped ZnO (AZO) thin film can be increased via B+ ion implantation from 3.92 eV up to 4.22 eV. The ion implantation has been carried out with the ion dose of 1 × 1016 cm−2 and ion energy of 5 keV. The resistance of the B+ implanted AZO films has been a bit raised, while their transmittance is slightly lowered, compared to those of un-implanted AZO films. These behaviors can be explained by the doping profile and the resultant band diagram. It is concluded that the coupling between the B+ ions and oxygen vacancies would be the main reason for an increase in the work function and a change in the other properties. We also address that the work function is more effectively alterable if the defect density of the top transparent conducting oxide layer can be controlled.

scholarly journals Nitrogen grain-boundary passivation of In-doped ZnO transparent conducting oxide

2018 ◽  
Vol 2 (4) ◽  
Author(s):  
D. Ali ◽  
M. Z. Butt ◽  
C. Coughlan ◽  
D. Caffrey ◽  
I. V. Shvets ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Transparent Conducting Oxide ◽  
Transparent Conducting ◽  
Doped Zno

Effect of the thickness of the ZnO buffer layer on the properties of electrodeposited p-Cu2O/n-ZnO/n-AZO heterojunctions

RSC Advances ◽  
2016 ◽  
Vol 6 (73) ◽  
pp. 68663-68674 ◽  
Author(s):  
Halla Lahmar ◽  
Amor Azizi ◽  
Guy Schmerber ◽  
Aziz Dinia
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Buffer Layer ◽  
Zno Film ◽  
Heterojunction Solar Cells ◽  
Transparent Conducting ◽  
Azo Thin Film ◽  
Doped Zno ◽  
Zno Buffer Layer

Transparent conducting Cu2O/non-doped ZnO/Al-doped ZnO/FTO heterojunction solar cells were fabricated by a three-step electrodeposition; with non-doped ZnO film as a buffer layer between-AZO thin film and p-Cu2O nanostructure.

Synthesis and characterization of In doped ZnO thin film as efficient transparent conducting oxide candidate

Optik ◽  
2018 ◽  
Vol 166 ◽  
pp. 317-322 ◽  
Author(s):  
Abdelhamid Bouaine ◽  
Amira Bourebia ◽  
Hassan Guendouz ◽  
Zineb Riane
Keyword(s):  
Thin Film ◽  
Transparent Conducting Oxide ◽  
Synthesis And Characterization ◽  
Zno Thin Film ◽  
Transparent Conducting ◽  
Doped Zno

Preparation and Characterization of Transparent Conducting Mn and Ni-Doped Zinc Oxide Films Prepared by Successive Ionic Layer Adsorption and Reaction Method

2020 ◽  
Vol 15 (1) ◽  
pp. 101-107
Author(s):  
M. Karunakaran ◽  
L. Bruno Chandrasekar ◽  
K. Kasirajan ◽  
R. Chandramohan
Keyword(s):  
Thin Films ◽  
Transparent Conducting Oxide ◽  
Hexagonal Structure ◽  
Silar Method ◽  
Texture Coefficients ◽  
Transparent Conducting ◽  
Doped Zno ◽  
Diffraction Patterns ◽  
Metal Doped

This paper reported the preparation and characterization of transparent conducting oxide thin films. Undoped and doped ZnO thin films were prepared by SILAR method. The micro-structural and optical properties were investigated. X-ray diffraction patterns revealed that the prepared thin films are polycrystalline in nature and has a hexagonal structure. The micro-structural properties of prepared thin films were calculated and crystallite size tends to changes due to dopant. The texture coefficients have been evaluated and found to be greater than unity revealing high texturing of the film. Undoped and Mn-doped ZnO prefer the orientation of (002) but Ni-doped ZnO and Mn and Ni co-doped ZnO prefers (100) orientation. The transmittance spectra of pure and transition metal-doped films were plotted against UV-Vis-NIR region and found that the transmittance changes with dopant and nature of doping. The optical band gap values were found to be in the range of 3.00–3.39 eV. The optical constants such as extinction coefficient, refractive index, dielectric constant and optical conductivity were examined.

scholarly journals Band gap and work function tailoring of SnO2 for improved transparent conducting ability in photovoltaics

2016 ◽  
Vol 4 (7) ◽  
pp. 1467-1475 ◽  
Author(s):  
Alex M. Ganose ◽  
David O. Scanlon
Keyword(s):  
Work Function ◽  
Band Gap ◽  
Effective Mass ◽  
Electron Affinity ◽  
Transparent Conducting Oxide ◽  
Optical Transparency ◽  
Electron Effective Mass ◽  
Transparent Conducting ◽  
Photovoltaic Applications

Alloying of PbO2 with SnO2 results in a material with a tuneable band gap, larger electron affinity and smaller electron effective mass, whilst maintaining high levels of optical transparency. These properties are expected to give rise to a more efficient transparent conducting oxide for use in photovoltaic applications.

Ab initioinvestigations of the F-doped ZnO transparent conducting oxide

2015 ◽  
Vol 90 (8) ◽  
pp. 085801 ◽  
Author(s):  
A Slassi ◽  
Y Ziat ◽  
Z Zarhri ◽  
M Abdellaoui ◽  
A Fakhim Lamrani
Keyword(s):  
Transparent Conducting Oxide ◽  
Transparent Conducting ◽  
Doped Zno
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