Fabrication and Characterization of Organic Light-Emitting Diodes Using Zinc Complexes as Hole-Blocking Layer

2006 ◽  
Vol 6 (11) ◽  
pp. 3637-3641
Author(s):  
Won Sam Kim ◽  
Jung Min You ◽  
Burm-Jong Lee ◽  
Yoon-Ki Jang ◽  
Dong-Eun Kim ◽  
...  

2-(2-Hydroxyphenyl)benzoxazole (HPB) was employed as organic ligand and the corresponding zinc complexes (Zn(HPB)2 and Zn(HPB)q) were synthesized. And their EL properties were characterized. The structures of zinc complexes were determined with FT-NMR, FT-IR, UV-Vis, and XPS. The thermal stability showed up to about 300 °C under nitrogen flow, which was measured by TGA. The photoluminescence (PL) of zinc complexes were measured from the DMF solution. The PL emitted in blue and yellow region, respectively. The EL devices were fabricated by the vacuum deposition. Two kinds of OLEDs devices were fabricated; ITO/NPB (40 nm)/Zn complexes (60 nm)/LiF/Al and ITO/NPB (40 nm)/Alq3 (60 nm)/Zn complexes (5 nm)/LiF/Al. Both of the EL properties as the emitting and the hole-blocking layer were investigated. The EL emission of Zn(HPB)q exhibited green light centered at 532 nm. The device showed a turn-on voltage at 5 V and a luminance of 6073 cd/m2 at 10 V. Meanwhile, the maximum EL the emission of the Zn(HPB)2 device was found to be at 447 nm. And the device showed a luminance of 2813 cd/m2 at 10 V. The ITO/NPB (40 nm)/Alq3 (60 nm)/Zn(HPB)2 (5 nm)/LiF/Al device showed increased luminance of L = 17000 cd/m2 compared to L = 12000 cd/m2 for similar device fabricated without the hole-blocking layer. And the turn-on voltage was significantly affected by the existence of the hole-blocking layer.

2014 ◽  
Vol 11 (3-4) ◽  
pp. 775-777 ◽  
Author(s):  
Kota Nakao ◽  
Muhammad Haziq ◽  
Yasumasa Okamura ◽  
Keisuke Yamane ◽  
Narihito Okada ◽  
...  

RSC Advances ◽  
2015 ◽  
Vol 5 (119) ◽  
pp. 98075-98079 ◽  
Author(s):  
Yuan Tian ◽  
Jinghong Peng ◽  
Xinjun Xu ◽  
Lidong Li

A non-conjugated polymer has been doped into a small-molecule material to act as the hole-blocking layer in solution-processed OLEDs, resulting in an enhanced luminous efficiency and a reduced turn-on voltage.


2021 ◽  
Vol 53 (11) ◽  
Author(s):  
Munaza Munsif ◽  
Muhammad Usman ◽  
Abdur-Rehman Anwar ◽  
Sibghatullah Khan ◽  
Saad Rasheed ◽  
...  

2016 ◽  
Vol 24 (11) ◽  
pp. 11387 ◽  
Author(s):  
An-Jye Tzou ◽  
Da-Wei Lin ◽  
Chien-Rong Yu ◽  
Zhen-Yu Li ◽  
Yu-Kuang Liao ◽  
...  

2010 ◽  
Vol 297-301 ◽  
pp. 561-566
Author(s):  
C.H. Liu ◽  
C.H. Tesng ◽  
C.P. Cheng

There are several kinds of methods in improving the efficiency of organic light emitting diodes (OLEDs). In this work, we used a co-deposited hole blocking layer to improve the efficiency of OLEDs. The structure of the component is: ITO/ MTDATA(15 nm) /NPB(40 nm) /BCP(10 nm) /BCP: Alq(15 nm) /LiF(0.7 nm)/ Al(180 nm). We changed the mixing rate of the BCP:Alq layer to be capable of hole blocking and electron transporting, and then improved the efficiency of OLEDs. Finally, we prepared white light OLED with doping Rubrene in NPB. When the concentration of the NPB: Rubrene layer was 2.0 wt.%, the device could emit the white light at 100 mA/cm2, and the luminance was above 2300 cd/m2, and the color coordinate was x = 0.36, y = 0.37.


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