Quantum Confinement Effect in Pristine and Oxygen Covered Silicon Nanocrystals with Surface States

2011 ◽  
Vol 8 (9) ◽  
pp. 1739-1743
Author(s):  
Sudip Chakraborty ◽  
Ch. Rajesh ◽  
Shailaja Mahamuni ◽  
S. V. Ghaisas
Keyword(s):  
Quantum Confinement ◽  
Silicon Nanocrystals ◽  
Quantum Confinement Effect ◽  
Surface States ◽  
Confinement Effect

Quantum-Confinement Effect in Silicon Nanocrystals during Their Dissolution in Model Biological Fluids

2021 ◽  
Vol 55 (1) ◽  
pp. 61-65
Author(s):  
M. B. Gongalsky ◽  
U. A. Tsurikova ◽  
K. A. Gonchar ◽  
G. Z. Gvindgiliiia ◽  
L. A. Osminkina
Keyword(s):  
Quantum Confinement ◽  
Silicon Nanocrystals ◽  
Biological Fluids ◽  
Quantum Confinement Effect ◽  
Confinement Effect

Electronic Structures and Surface States of ZnO Finite Well Structures

2009 ◽  
Vol 151 ◽  
pp. 208-212
Author(s):  
Kuo Feng Lin ◽  
Wen Feng Hsieh
Keyword(s):  
Electronic Structures ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Tight Binding ◽  
Surface States ◽  
Confinement Effect ◽  
Electronic Band ◽  
Electron Field ◽  
Extra Electron ◽  
Electronic Band Structures

Electronic band structures and surface states were investigated for ZnO finite wells or slabs grown along <0001> and <1-100> directions using tight binding representation. The dangling bonds on two end-surfaces caused surface bands for different directions grown slabs, of which the wavefunctions tend to localize at the end surfaces. The increasing splitting of the degenerate surface bands at the Γ point was observed decreasing with the thickness of the nonpolar [1-100] slab. And, the quantum confinement effect is distinctively enhanced by the extra electron-field induced in the <0001> grown finite well with the polar end-surfaces.

Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films

2004 ◽  
Vol 817 ◽  
Author(s):  
Tae-Youb Kim ◽  
Nae-Man Park ◽  
Kyung-Hyun Kim ◽  
Young-Woo Ok ◽  
Tae-Yeon Seong ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Quantum Confinement ◽  
Silicon Nanocrystals ◽  
Near Infrared ◽  
Quantum Confinement Effect ◽  
Confinement Effect ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Wide Range

AbstractSilicon nanocrystals were in situ grown in a silicon nitride film by plasma enhanced chemical vapor deposition. The size and structure of silicon nanocrystals were confirmed by high-resolution transmission electron microscopy. Depending on the size, the photoluminescence of silicon nanocrystals can be tuned from the near infrared (1.38 eV) to the ultraviolet (3.02 eV). The fitted photoluminescence peak energy as E(eV) = 1.16 + 11.8/d2 is an evidence for the quantum confinement effect in silicon nanocrystals. The results demonstrate that the band gap of silicon nanocrystals embedded in silicon nitride matrix was more effectively controlled for a wide range of luminescent wavelengths.

Quantum confinement effect of silicon nanocrystals in situ grown in silicon nitride films

2004 ◽  
Vol 85 (22) ◽  
pp. 5355-5357 ◽  
Author(s):  
Tae-Youb Kim ◽  
Nae-Man Park ◽  
Kyung-Hyun Kim ◽  
Gun Yong Sung ◽  
Young-Woo Ok ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Quantum Confinement ◽  
Silicon Nanocrystals ◽  
Quantum Confinement Effect ◽  
Confinement Effect ◽  
Silicon Nitride Films

Tunable Quantum Confinement Effect on Non-volatile Thin Film Polymer Memory Device

2008 ◽  
Author(s):  
Augustin J. Hong ◽  
Kang L. Wang ◽  
Wei Lek Kwan ◽  
Yang Yang ◽  
Dayanara Parra ◽  
...  
Keyword(s):  
Thin Film ◽  
Quantum Confinement ◽  
Quantum Confinement Effect ◽  
Memory Device ◽  
Confinement Effect ◽  
Film Polymer ◽  
Polymer Memory
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