Binding Energies of Ground and Excited States of Shallow Donors in Semimagnetic Parabolic Quantum Dots

2008 ◽  
Vol 5 (4) ◽  
pp. 591-596 ◽  
Author(s):  
A. John Peter
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Binding Energies ◽  
Shallow Donors

Donor States in Spherical GaAs-Ga1-xAlxAs Quantum Dots

1997 ◽  
Vol 11 (15) ◽  
pp. 673-679 ◽  
Author(s):  
Ecaterina C. Niculescu ◽  
Ana Niculescu
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Effective Mass ◽  
Coulomb Potential ◽  
Adjustable Parameter ◽  
Binding Energies ◽  
Central Cell ◽  
Shallow Donors ◽  
Mass Approximation ◽  
Donor States

The effect of the central cell correction on the binding energies of shallow donors in a spherical GaAs-Ga 1-x Al x As quantum dot is studied. The effective-mass approximation within a variational scheme is adopted and central cell corrections are calculated by using a Coulomb potential modified with an adjustable parameter. For small values of the radius of the dot large corrections are obtained for the shallow donors studied.

scholarly journals Influence of TOPO and TOPO-CdSe/ZnS Quantum Dots on Luminescence Photodynamics of InP/InAsP/InPHeterostructure Nanowires

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 640
Author(s):  
Artem I. Khrebtov ◽  
Vladimir V. Danilov ◽  
Anastasia S. Kulagina ◽  
Rodion R. Reznik ◽  
Ivan D. Skurlov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Molecular Beam ◽  
Surface Passivation ◽  
Low Energy ◽  
Trioctylphosphine Oxide ◽  
Reverse Transfer ◽  
Semiconductor Heterostructure ◽  
Ligand Type

The passivation influence by ligands coverage with trioctylphosphine oxide (TOPO) and TOPO including colloidal CdSe/ZnS quantum dots (QDs) on optical properties of the semiconductor heterostructure, namely an array of InP nanowires (NWs) with InAsP nanoinsertion grown by Au-assisted molecular beam epitaxy on Si (111) substrates, was investigated. A significant dependence of the photoluminescence (PL) dynamics of the InAsP insertions on the ligand type was shown, which was associated with the changes in the excitation translation channels in the heterostructure. This change was caused by a different interaction of the ligand shells with the surface of InP NWs, which led to the formation of different interfacial low-energy states at the NW-ligand boundary, such as surface-localized antibonding orbitals and hybridized states that were energetically close to the radiating state and participate in the transfer of excitation. It was shown that the quenching of excited states associated with the capture of excitation to interfacial low-energy traps was compensated by the increasing role of the “reverse transfer” mechanism. As a result, the effectiveness of TOPO-CdSe/ZnS QDs as a novel surface passivation coating was demonstrated.

Well-defined excited states of self-assembled InAs∕InAlGaAs quantum dots on InP (001)

2005 ◽  
Vol 87 (5) ◽  
pp. 053102 ◽  
Author(s):  
Jin Soo Kim ◽  
Jin Hong Lee ◽  
Sung Ui Hong ◽  
Ho-Sang Kwack ◽  
Byung Seok Choi ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Self Assembled

Mode assignment of excited states in self-assembled InAs/GaAs quantum dots

1998 ◽  
Vol 58 (11) ◽  
pp. 7181-7187 ◽  
Author(s):  
Susumu Noda ◽  
Tomoki Abe ◽  
Masatoshi Tamura
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Self Assembled ◽  
Mode Assignment

Excited states and selection rules in self-assembled InAs/GaAs quantum dots

1999 ◽  
Vol 60 (4) ◽  
pp. R2185-R2188 ◽  
Author(s):  
I. E. Itskevich ◽  
M. S. Skolnick ◽  
D. J. Mowbray ◽  
I. A. Trojan ◽  
S. G. Lyapin ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excited States ◽  
Selection Rules ◽  
Self Assembled

scholarly journals Universality of excited three-body bound states in one dimension

2021 ◽  
Author(s):  
Lucas Happ ◽  
Matthias Zimmermann ◽  
Maxim A Efremov
Keyword(s):  
Excited States ◽  
Bound States ◽  
Space Dimension ◽  
Binding Energies ◽  
Wave Functions ◽  
One Dimension ◽  
Strong Indication ◽  
Body System ◽  
Weakly Bound ◽  
Three Body

Abstract We study a heavy-heavy-light three-body system confined to one space dimension in the regime where an excited state in the heavy-light subsystems becomes weakly bound. The associated two-body system is characterized by (i) the structure of the weakly-bound excited heavy-light state and (ii) the presence of deeply-bound heavy-light states. The consequences of these aspects for the behavior of the three-body system are analyzed. We find a strong indication for universal behavior of both three-body binding energies and wave functions for different weakly-bound excited states in the heavy-light subsystems.

scholarly journals COMPARISON BETWEEN THE RELATIVISTIC AND NON-RELATIVISTIC TREATMENT OF THE Λ-HYPERNUCLEI

2020 ◽  
Vol 2 ◽  
pp. 382
Author(s):  
C. G. Koutroulos
Keyword(s):  
Root Mean Square ◽  
Excited States ◽  
Binding Energies ◽  
Mean Square ◽  
Relativistic Treatment

Using as an example potentials of the form U±(r)=-D±(cosh^2(r/R))^-1 the binding energies as well as the root mean square radii of the orbits of the Λ particle in hypernuclei in the ground and excited states were calculated in the relativistic and non-relativistic cases and the results are compared.

Size-dependent binding energies and fine-structure splitting of excitonic complexes in single InAs/GaAs quantum dots

2007 ◽  
Vol 122-123 ◽  
pp. 735-739 ◽  
Author(s):  
S. Rodt ◽  
R. Seguin ◽  
A. Schliwa ◽  
F. Guffarth ◽  
K. Pötschke ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Fine Structure ◽  
Binding Energies ◽  
Size Dependent ◽  
Fine Structure Splitting ◽  
Structure Splitting

Excited states of modified oxygen-deficient centers and Si quantum dots in Gd-implanted silica glasses: Emission dynamics and lifetime distributions

2021 ◽  
Author(s):  
Anatoly Zatsepin ◽  
Yulia Kuznetsova ◽  
Elena Trofimova ◽  
Vladimir A Pustovarov
Keyword(s):  
Quantum Dots ◽  
Ion Implantation ◽  
Excited States ◽  
Lifetime Distributions ◽  
Time Resolved ◽  
Silica Glasses ◽  
Pulsed Cathodoluminescence ◽  
Si Quantum Dots

The emission centers and excited states characteristics in silica glasses implanted with Gd ions were studied by time-resolved pulsed cathodoluminescence. It was found that in the process of ion implantation,...

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