Aluminum Nitride/Polyimide Nanocomposite Films with High Thermal Conductivity and Low Dielectric Permittivity

2012 ◽  
Vol 1 (1) ◽  
pp. 78-83 ◽  
Author(s):  
Chang-Yong Shi ◽  
Xiao-Jing Hao ◽  
Jun-Wei Zha
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Permittivity ◽  
Aluminum Nitride ◽  
High Thermal Conductivity ◽  
Nanocomposite Films ◽  
Low Dielectric ◽  
Polyimide Nanocomposite

scholarly journals Fabricating high thermal conductivity rGO/polyimide nanocomposite films via a freeze-drying approach

RSC Advances ◽  
2018 ◽  
Vol 8 (39) ◽  
pp. 22169-22176 ◽  
Author(s):  
Shiyang Wei ◽  
Qiaoxi Yu ◽  
Zhenguo Fan ◽  
Siwei Liu ◽  
Zhenguo Chi ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Freeze Drying ◽  
Composite Films ◽  
High Thermal Conductivity ◽  
Nanocomposite Films ◽  
Polyimide Nanocomposite

PI composite films with excellent thermal conductivity (as high as 2.78 W m−1 K−1) have been fabricated by a freeze drying approach.

scholarly journals Silver Nanoparticle-Deposited Aluminum Oxide Nanoparticle as Fillers for Epoxy Composites with High Thermal Conductivity

2018 ◽  
Vol 27 (6) ◽  
pp. 096369351802700
Author(s):  
Tao Huang ◽  
Yimin Yao ◽  
Gang Zhang ◽  
Fanling Meng
Keyword(s):  
Thermal Conductivity ◽  
Aluminum Nitride ◽  
Silver Nanoparticle ◽  
Ag Nanoparticles ◽  
Thermal Contact Resistance ◽  
Epoxy Composite ◽  
Thermal Contact ◽  
High Thermal Conductivity ◽  
Epoxy Composites ◽  
Oxide Nanoparticle

With the development of polymer-filled composites, the demand of high thermal conductivity materials is much attractive than ever. However, the process of a common method to improve thermal conductivity of composites is considerably complicated. The aim of this study is to investigate thermal conductivity of epoxy filled silver nanoparticle deposited aluminum nitride nanoparticles with relatively convenient process. We found that the thermal conductivities of composites filled with AlN/Ag nanoparticles are effectively enhanced, which is enormously increased from 0.48 Wm-1K-1(1.88 vol%) to 3.66 Wm-1K-1 (19.54 vol%). This can be ascribed to the bridging connections of silver nanoparticle among aluminum nitride nanoparticles. In addition, the thermal contact resistance of the epoxy composites filler with AlN/Ag nanoparticles is decreased, which is proved by the fitting measured thermal conductivity of epoxy composite with one physical model. We believe the finding has great potential for any microelectronic application.

Metallization Behavior in Aluminum Nitride Electronic Packages

1990 ◽  
Vol 203 ◽  
Author(s):  
Ellice Y. Luh ◽  
Leonard E. Dolhert ◽  
Jack H. Enloe ◽  
John W. Lau
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Properties ◽  
Aluminum Nitride ◽  
High Density ◽  
High Thermal Conductivity ◽  
Electronic Packages ◽  
Oxide Ceramics ◽  
Chemical Behavior ◽  
Hermetic Seal ◽  
Silicon Based

ABSTRACTCharacteristics such as CTE close to that of silicon, high thermal conductivity, and good dielectric properties make aluminum nitride (AIN) an excellent dielectric for packaging silicon-based high density multichip interconnects. However, there remains many aspects of its behavior that have not been characterized. One such example is the behavior of the various metallizations used within a package. As with A12O3, these metallizations must contribute toward a hermetic seal separating the die from the environment. However, the chemical behavior of the metallization systems used for A12O3 may not be compatible with non-oxide ceramics such as AIN. Consequently, these chemical interactions are investigated in view of the requirements for each application within electronic packages. Hermeticity testing results are also included in the discussion.

Separation of Internal Strains and Lattice Distortion Caused by Oxygen Impurities in Aluminum Nitride Hot-Pressed Ceramics

1994 ◽  
Vol 38 ◽  
pp. 479-487 ◽  
Author(s):  
O. N. Grigoriev ◽  
S. M. Kushnerenko ◽  
K. A. Plotnikov ◽  
W. Kreher
Keyword(s):  
Thermal Conductivity ◽  
Aluminum Nitride ◽  
Integrated Circuit ◽  
Room Temperature ◽  
Lattice Distortion ◽  
High Thermal Conductivity ◽  
Hybrid Integrated Circuit ◽  
Oxygen Contamination ◽  
Internal Strains ◽  
Oxygen Impurities

Recently aluminum nitride (A1N) has been intensively studied as a promising material for production of hybrid integrated circuit substrates because of its high thermal conductivity, high fjexural strength, and nontoxic nature. The estimated theoretical value of its thermal conductivity at room temperature is 320 W/mK, but it is strongly degraded by the introduction of oxygen. The measured values vary from 30 to 260 W/mK, Therefore, in production of this material the reduction of oxygen contamination is of paramount importance.

scholarly journals Preparation and properties of MWCNTs-BNNSs/epoxy composites with high thermal conductivity and low dielectric loss

2020 ◽  
Vol 24 ◽  
pp. 100985 ◽  
Author(s):  
Rui Wang ◽  
Congzhen Xie ◽  
Shoukang Luo ◽  
Huasong Xu ◽  
Bin Gou ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Dielectric Loss ◽  
High Thermal Conductivity ◽  
Epoxy Composites ◽  
Low Dielectric
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