Simulation Studies on GaN/InGaN Based Multi Quantum Well Light Emitting Diode for Reducing Efficiency Droop by Imposing Improved Si-Doped Barrier Model

2012 ◽  
Vol 1 (1) ◽  
pp. 57-63 ◽  
Author(s):  
Dipika Robidas ◽  
D. Arivuoli
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Efficiency Droop ◽  
Simulation Studies ◽  
Light Emitting ◽  
Si Doped ◽  
Multi Quantum Well ◽  
Barrier Model

Investigating the origin of efficiency droop by profiling the temperature across the multi-quantum well of an operating light-emitting diode

2015 ◽  
Vol 106 (4) ◽  
pp. 041114 ◽  
Author(s):  
Euihan Jung ◽  
Gwangseok Hwang ◽  
Jaehun Chung ◽  
Ohmyoung Kwon ◽  
Jaecheon Han ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Efficiency Droop ◽  
Light Emitting ◽  
Multi Quantum Well

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Stark Effect ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Green Emission ◽  
Luminescence Spectroscopy ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Multi Quantum Well

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

The effect of Multi Quantum Well growth regime transition on MQW/p-GaN structure and light emitting diode (LED) performance

2021 ◽  
Vol 121 ◽  
pp. 105431
Author(s):  
Hayatun Najihah Hussin ◽  
Noor Azrina Talik ◽  
Mohd Nazri Abd Rahman ◽  
Mohd Raqif Mahat ◽  
Prabakaran Poopalan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Regime Transition ◽  
Light Emitting ◽  
Growth Regime ◽  
Multi Quantum Well

Luminescence study in InGaAs/AlGaAs multi-quantum-well light emitting diode with p–n junction engineering

2020 ◽  
Vol 127 (8) ◽  
pp. 085706 ◽  
Author(s):  
Lili Han ◽  
Minglong Zhao ◽  
Xiansheng Tang ◽  
Wenxue Huo ◽  
Zhen Deng ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Luminescence Study ◽  
Multi Quantum Well

scholarly journals Simulation of Widebandgap Multi-Quantum Well Light Emitting Diodes

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 295-299 ◽  
Author(s):  
D. Oriato ◽  
Alison B. Walker ◽  
W. N. Wang
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Energy Levels ◽  
Drift Diffusion Model ◽  
Light Emitting ◽  
Consistent Solution ◽  
Band Profile ◽  
Piezoelectric Field ◽  
Model Lattice ◽  
Multi Quantum Well

Charge transport has been simulated in a novel two quantum well InGaN/GaN light emitting diode. Asymmetric tunnelling for holes and electrons has been used to enhance the quantum efficiency of the diode. A self-consistent solution of Poisson and Schrödinger equations has been used to obtain the band profile, energy levels and wave functions. Transport in the bulk nitride has been simulated by a drift diffusion model. Lattice strain and the resulting piezoelectric field effects have been shown to influence the device characteristics.

Electromigration-induced failure of GaN multi-quantum well light emitting diode

2000 ◽  
Vol 36 (10) ◽  
pp. 908 ◽  
Author(s):  
Hyunsoo Kim ◽  
Hyundoek Yang ◽  
Chul Huh ◽  
Sang-Woo Kim ◽  
Seong-Ju Park ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Light Emitting ◽  
Multi Quantum Well
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