Negative Differential Resistance and Transition from Semiconductor to Metal Induced by Gate Voltage in Armchair Graphene Nanoribbons with Different Symmetries

2012 ◽  
Vol 18 (1) ◽  
pp. 69-72
Author(s):  
Ling-Jiang Yao ◽  
Yun Ren ◽  
Jun He ◽  
Li-Ming Tang ◽  
Ke-Qiu Chen
Keyword(s):  
Gate Voltage ◽  
Negative Differential Resistance ◽  
Graphene Nanoribbons ◽  
Differential Resistance ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene

Negative differential resistance induced by SiNx co-dopant in armchair graphene nanoribbon

2014 ◽  
Vol 28 (29) ◽  
pp. 1450229 ◽  
Author(s):  
Cai-ping Cheng ◽  
Hui-fang Hu ◽  
Zhao-jin Zhang ◽  
Quanhui Liu ◽  
Ying Chen ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Negative Differential Resistance ◽  
Density Functional ◽  
Graphene Nanoribbons ◽  
Differential Resistance ◽  
Functional Theory ◽  
Co Doping ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene Nanoribbon ◽  
Armchair Graphene

By adopting density functional theory in combination with nonequilibrium Green's functions, we investigated the electronic structure and transport properties of silicon/nitrogen ( Si / N ) co-doping armchair graphene nanoribbons (AGNRs) with SiN x co-dopant incorporated in neighboring carbon atoms. The results demonstrate that the electronic structure can be modulated by introducing SiN x co-dopants in AGNRs. The striking negative differential resistance behaviors in the range of low bias can be observed in Si / N co-doped AGNR devices. These remarkable properties suggest the potential application of Si / N co-doping AGNRs in molectronics.

scholarly journals Effect of substitutional defects on resonant tunneling diodes based on armchair graphene and boron nitride nanoribbons lateral heterojunctions

2020 ◽  
Vol 11 ◽  
pp. 688-694 ◽  
Author(s):  
Majid Sanaeepur
Keyword(s):  
Boron Nitride ◽  
Negative Differential Resistance ◽  
Resonant Tunneling ◽  
Graphene Nanoribbons ◽  
Differential Resistance ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode ◽  
Substitutional Defects ◽  
Boron Nitride Nanoribbons ◽  
Armchair Graphene

A nanometer-scaled resonant tunneling diode based on lateral heterojunctions of armchair graphene and boron nitride nanoribbons, exhibiting negative differential resistance is proposed. Low-bandgap armchair graphene nanoribbons and high-bandgap armchair boron nitride nanoribbons are used to design the well and the barrier region, respectively. The effect of all possible substitutional defects (including BC, NC, CB, and CN) at the interface of graphene and boron nitride nanoribbons on the negative differential resistance behavior of the proposed resonant tunneling diode is investigated. Transport simulations are carried out in the framework of tight-binding Hamiltonians and non-equilibrium Green’s functions. The results show that a single substitutional defect at the interface of armchair graphene and boron nitride nanoribbons can dramatically affect the negative differential resistance behavior depending on its type and location in the structure.

Family-dependent magnetism in atomic boron adsorbed armchair graphene nanoribbons

2019 ◽  
Vol 7 (21) ◽  
pp. 6241-6245 ◽  
Author(s):  
Wei-Wei Yan ◽  
Xiao-Fei Li ◽  
Xiang-Hua Zhang ◽  
Xinrui Cao ◽  
Mingsen Deng
Keyword(s):  
Fermi Level ◽  
Graphene Nanoribbons ◽  
Spin Splitting ◽  
Localized State ◽  
The Family ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene ◽  
Boron Adsorption

Boron adsorption induces a heavily localized state right at the Fermi level only in the family of W = 3p + 1 and thus spin-splitting occurs spontaneously.

Oxygen-promoted synthesis of armchair graphene nanoribbons on Cu(111)

2021 ◽  
Author(s):  
Penghui Ji ◽  
Oliver MacLean ◽  
Gianluca Galeotti ◽  
Dominik Dettmann ◽  
Giulia Berti ◽  
...  
Keyword(s):  
Graphene Nanoribbons ◽  
Armchair Graphene Nanoribbons ◽  
Armchair Graphene
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