Structural Properties of the Hexagonal Cross-Sectional ZnO Nanorods Under Compression and Torsion: Molecular Dynamics Simulations

2016 ◽  
Vol 8 (1) ◽  
pp. 13-20 ◽  
Author(s):  
Mehmet Emin Kilic ◽  
Sakir Erkoc
Soft Matter ◽  
2018 ◽  
Vol 14 (24) ◽  
pp. 5098-5105 ◽  
Author(s):  
Alexey A. Gavrilov ◽  
Igor I. Potemkin

We propose an experimentally-inspired model of gels and microgels with sliding cross-links, and use this model to study the mechanical and structural properties with molecular dynamics simulations.


2013 ◽  
Vol 32 (11) ◽  
pp. 1707-1719 ◽  
Author(s):  
Ian Ilizaliturri-Flores ◽  
José Correa-Basurto ◽  
Claudia G. Benítez-Cardoza ◽  
Absalom Zamorano-Carrillo

2012 ◽  
Vol 27 (2) ◽  
pp. 282-286 ◽  
Author(s):  
Jukka Ketoja ◽  
Sami Paavilainen ◽  
James Liam McWhirter ◽  
Tomasz Róg ◽  
Juha Järvinen ◽  
...  

Abstract We have carried out atomistic molecular dynamics simulations to study the mechanical properties of cellulose nanofibrils in water and ethanol. The studied elementary fibrils consisted of regions having 34 or 36 cellulose chains whose cross-sectional diameter across the fibril was roughly 3.4 nm. The models used in simulations included both crystalline and non-crystalline regions, where the latter were designed to describe the essentials parts of amorphous cellulose nanofibrils. We examined different numbers of connecting chains between the crystallites, and found out that the elastic constants, inelastic deformations, and strength of the fibril depend on this number. For example, the elastic modulus for the whole fibril can be estimated to increase by 4 GPa for each additional connecting chain.


1993 ◽  
Vol 297 ◽  
Author(s):  
R. Biswas ◽  
I. Kwon

Microvoids have been observed in a-Si:H as demonstrated by small angle X-ray scattering. We have studied the structural properties of these microvoids with molecular dynamics simulations. Using molecular dynamics simulations with classical potentials, we have created microvoids by removing Si and H atoms from a computer generated a-Si:H network. The internal surfaces of the microvoids were passivated with additional H atoms and the microvoids were fully relaxed. Microvoids over a limited range of sizes (5-90 missing atoms) were examined. We obtained a relaxed microvoid structure with no dangling bonds for a microvoid with 17 missing atoms, whereas other sizes examined produced less relaxed models with short H-H distances at the microvoid surface. The strains near the microvoid surface are described. The microvoid model was stable to local excitations on weak bonds in the vicinity of the microvoid.


Sign in / Sign up

Export Citation Format

Share Document