Angled Screw Channel: An Alternative to Cemented Single-Implant Restorations—Three Clinical Examples

2016 ◽  
Vol 29 (1) ◽  
pp. 74-76 ◽  
Author(s):  
Björn Gjelvold ◽  
Majid Sohrabi ◽  
Bruno Chrcanovic
Keyword(s):  
Author(s):  
Mohammad Javad Zarrabi ◽  
Mehrdad Radvar ◽  
Farid Shiezadeh ◽  
Majid Reza Mokhtari ◽  
Amirhossein Nejat

2020 ◽  
Vol 69 (4) ◽  
Author(s):  
Mayara A. Pinheiro ◽  
Ingrid A. Meira ◽  
Marcela B. Magno ◽  
Lucianne C. Maia ◽  
Renata C. Rodrigues Garcia

2019 ◽  
Vol 0 (0) ◽  
pp. 0-0
Author(s):  
sara mohamed ◽  
nesrin elmahrouky ◽  
Hala Gamal el din ◽  
nahed abd elmoniem

2021 ◽  
pp. 103684
Author(s):  
Burak Yilmaz ◽  
Diogo Gouveia ◽  
Vinicius Rizzo Marques ◽  
Emre Diker ◽  
Martin Schimmel ◽  
...  

BDJ Open ◽  
2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Radhika J Baireddy ◽  
Neil Cook ◽  
Siwei Li ◽  
Fadi Barrak

Abstract Background Immediate loading is an attractive option for avoiding secondary surgery. However, it is unclear whether it provides a better aesthetic outcome compared to conventional loading with implants placed in healed ridges. Aims To compare the aesthetic outcomes of immediately and conventionally loaded single implants in healed anterior maxillary ridges. Methodology A systematic review using PICO was conducted. EMBASE, MEDLINE and DoSS databases were searched. The Cochrane Risk of Bias tool for Randomised Controlled Trials and the Effective Public Health Practice Project tool for other study designs were used for quality appraisal. A narrative synthesis was undertaken. Results A total of 622 articles were identified. After screening, a total of five papers were included. Results indicated no statistically significant difference in pink or white aesthetic scores between the immediate and conventional loading groups at 1- and 5-year review and the Papilla Index at the 1-year review. Conclusion Within the limitations of this review, immediate loading of single implants provides a comparable aesthetic outcome to conventional loading in healed ridges of the anterior maxillary.


1990 ◽  
Vol 201 ◽  
Author(s):  
Honglie Shen ◽  
Genqing Yang ◽  
Zuyao Zhou ◽  
Guanqun Xia ◽  
Shichang Zou

AbstractDual implantations of Si+ and P+ into InP:Fe were performed both at 200°C and room temperature. Si+ ions were implanted by 150keV with doses ranging from 5×1013 /cm2 to 1×1015 /cm2, while P+ ions were implanted by 110keV. 160keV and 180keV with doses ranging from 1×l013 /cm2 to 1×1015 /cm2. Hall measurements and photoluminescence spectra were used to characterize the silicon nitride encapsulated annealed samples. It was found that enhanced activation can be obtained by Si+ and P+ dual implantations. The optimal condition for dual implantations is that the atomic distribution of implanted P overlaps that of implanted si with the same implant dose. For a dose of 5×l014 /cm2, the highest activation for dual implants is 70% while the activation for single implant is 40% after annealing at 750°C for 15 minutes. PL spectrum measurement was carried out at temperatures from 11K to 100K. A broad band at about 1.26eV was found in Si+ implanted samples, of which the intensity increased with increasing of the Si dose and decreased with increasing of the co-implant P+ dose. The temperature dependence of the broad band showed that it is a complex (Vp-Sip) related band. All these results indicate that silicon is an amphoteric species in InP.


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