High-Flux Hemodialysis: Overcoming the Tyranny of Time

2015 ◽  
pp. 73-97 ◽  
Author(s):  
Robert H. Barth
Keyword(s):  
High Flux

scholarly journals Comparative study of surface modification and D retention between beryllium and beryllides under high flux plasma exposure

2021 ◽  
pp. 101014
Author(s):  
M. Miyamoto ◽  
Y. Sugimoto ◽  
D. Nishijima ◽  
M.J. Baldwin ◽  
R.P. Doerner ◽  
...  
Keyword(s):  
Surface Modification ◽  
Comparative Study ◽  
High Flux ◽  
Plasma Exposure

scholarly journals Charge Sharing and Charge Loss in High-Flux Capable Pixelated CdZnTe Detectors

Sensors ◽  
2021 ◽  
Vol 21 (9) ◽  
pp. 3260
Author(s):  
Kjell A. L. Koch-Mehrin ◽  
Sarah L. Bugby ◽  
John E. Lees ◽  
Matthew C. Veale ◽  
Matthew D. Wilson
Keyword(s):  
Carrier Transport ◽  
Hole Transport ◽  
Uniform Electric Field ◽  
Photon Flux ◽  
High Flux ◽  
Charge Sharing ◽  
Cdte Detector ◽  
Charge Loss ◽  
Cdznte Detectors ◽  
Detector Model

Cadmium zinc telluride (CdZnTe) detectors are known to suffer from polarization effects under high photon flux due to poor hole transport in the crystal material. This has led to the development of a high-flux capable CdZnTe material (HF-CdZnTe). Detectors with the HF-CdZnTe material have shown promising results at mitigating the onset of the polarization phenomenon, likely linked to improved crystal quality and hole carrier transport. Better hole transport will have an impact on charge collection, particularly in pixelated detector designs and thick sensors (>1 mm). In this paper, the presence of charge sharing and the magnitude of charge loss were calculated for a 2 mm thick pixelated HF-CdZnTe detector with 250 μm pixel pitch and 25 μm pixel gaps, bonded to the STFC HEXITEC ASIC. Results are compared with a CdTe detector as a reference point and supported with simulations from a Monte-Carlo detector model. Charge sharing events showed minimal charge loss in the HF-CdZnTe, resulting in a spectral resolution of 1.63 ± 0.08 keV Full Width at Half Maximum (FWHM) for bipixel charge sharing events at 59.5 keV. Depth of interaction effects were shown to influence charge loss in shared events. The performance is discussed in relation to the improved hole transport of HF-CdZnTe and comparison with simulated results provided evidence of a uniform electric field.

scholarly journals Quantifying erosion and retention of silicon carbide due to D plasma irradiation in a high-flux linear plasma device

2021 ◽  
Vol 26 ◽  
pp. 100939
Author(s):  
G. Sinclair ◽  
T. Abrams ◽  
S. Bringuier ◽  
D.M. Thomas ◽  
L. Holland ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Flux ◽  
Plasma Irradiation ◽  
Plasma Device ◽  
Linear Plasma
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