Effects of Various Drugs Supposed to Interact with Serotonin on PGO Frequency Changes Induced by Reserpine and 5-Hydroxytryptophan

2015 ◽  
pp. 37-44
Author(s):  
H. Van Riezen ◽  
J. Van Proosdij ◽  
E. Sch�nbaum
Keyword(s):  
Frequency Changes

SEM image sharpness analysis

1996 ◽  
Vol 54 ◽  
pp. 142-143
Author(s):  
M. T. Postek ◽  
A. E. Vladar
Keyword(s):  
High Frequency ◽  
Low Frequency ◽  
Quantitative Information ◽  
Primary Electron ◽  
Image Sharpness ◽  
Critical Dimensions ◽  
Sem Image ◽  
Frequency Changes ◽  
Electron Microscopes ◽  
Scanning Electron

Fully automated or semi-automated scanning electron microscopes (SEM) are now commonly used in semiconductor production and other forms of manufacturing. The industry requires that an automated instrument must be routinely capable of 5 nm resolution (or better) at 1.0 kV accelerating voltage for the measurement of nominal 0.25-0.35 micrometer semiconductor critical dimensions. Testing and proving that the instrument is performing at this level on a day-by-day basis is an industry need and concern which has been the object of a study at NIST and the fundamentals and results are discussed in this paper.In scanning electron microscopy, two of the most important instrument parameters are the size and shape of the primary electron beam and any image taken in a scanning electron microscope is the result of the sample and electron probe interaction. The low frequency changes in the video signal, collected from the sample, contains information about the larger features and the high frequency changes carry information of finer details. The sharper the image, the larger the number of high frequency components making up that image. Fast Fourier Transform (FFT) analysis of an SEM image can be employed to provide qualitiative and ultimately quantitative information regarding the SEM image quality.

ESP Optimization Goes Further: Operating Frequency Beyond 60 Hz

2020 ◽  
Author(s):  
A. Muklas
Keyword(s):  
Circuit Breaker ◽  
Load Level ◽  
Operating Frequency ◽  
Well Test ◽  
Acceptable Range ◽  
Artificial Lift ◽  
Harmonic Filter ◽  
Electrical Submersible Pump ◽  
Motor Load ◽  
Frequency Changes

Optimization in brown field developments is always challenging in terms of cost. One of it is XY Field, Rimau Block, South Sumatera with more than 70% of artificial lift is Electrical Submersible Pump (ESP). At ESP wells that are already running at maximum operating frequency of 60 Hz, some are still having problems to optimize their potential. The option to replace the pump with a higher rate is less of an option due to high cost. This leaves an opportunity to gain oil production by increasing frequency above 60 Hz. Upon discussion with the ESP Principal on the risks and possibilities, a trial was then planned for 3-wells. Candidates are selected from the list of ESP wells with the following criteria such as already operated at 60 Hz, still have sufficient fluid submergence, and based on simulated motor load at 70 Hz is still at safe motor load level. Frequency was increased gradually while continuously monitoring ESP Parameters (motor load, voltage and harmonic). It is also necessary to monitor the cable temperature as it is directly affected by the frequency changes. For each frequency increment, a well test is also performed to monitor the production changes. The trial was done on 3-wells (XY-364, XY-370 and XY-378), with the following promising results. XY-364 and XY-378 successfully reached the targeted 70Hz, while XY-370 stopped at 65Hz due to a cable temperature issue. Oil gain from this optimization was 48 BOPD with 1,043 BLPD and similar BS&W profile. ESP operation still normal until present day with all parameters at acceptable range. There were, however, challenges found during the trial. Cable temperature of XY-364 increased at junction box and found cable scun loosen. The problem was solved by replacing the cables. For XY-370, found temperature increment at moulded case circuit breaker during trial at 65 Hz. It was decided to hold at existing frequency. Unbalanced motor load at XY-364 and broken capacitor at XY-370 occurred at Harmonic Filter. The problem was solved by replacing the capacitor. The trial proves that we can operate ESP higher than base frequency (60 Hz) and resulted in decent oil gain. This opens an opportunity in ESP optimization above 60 Hz at an even larger scale.

Laser Silicon Interaction Study on Ring Oscillators to Establish Temperature Voltage Dependency Trends on 14 nm and Future FinFET Technologies

2017 ◽  
Author(s):  
Gaurav Mattey ◽  
Lava Ranganathan
Keyword(s):  
High Speed ◽  
Laser Frequency ◽  
Ring Oscillator ◽  
Switching Speed ◽  
Dual Nature ◽  
Voltage Imaging ◽  
Multiple Cores ◽  
Speed Performance ◽  
Self Test ◽  
Frequency Changes

Abstract Critical speed path analysis using Dynamic Laser Stimulation (DLS) technique has been an indispensable technology used in the Semiconductor IC industry for identifying process defects, design and layout issues that limit product speed performance. Primarily by injecting heat or injecting photocurrent in the active diffusion of the transistors, the laser either slows down or speeds up the switching speed of transistors, thereby affecting the overall speed performance of the chip and revealing the speed limiting/enhancing circuits. However, recently on Qualcomm Technologies’ 14nm FinFET technology SOC product, the 1340nm laser’s heating characteristic revealed a Vt (threshold voltage) improvement behavior at low operating voltages which helped identify process issues on multiple memory array blocks across multiple cores failing for MBIST (Memory Built-in Self-test). In this paper, we explore the innovative approach of using the laser to study Vt shifts in transistors due to process issues. We also study the laser silicon interactions through scanning the 1340nm thermal laser on silicon and observing frequency shifts in a high-speed Ring Oscillator (RO) on 16nm FinFET technology. This revealed the normal and reverse Temperature Dependency Gate voltages for 16nm FinFET, thereby illustrating the dual nature of stimulation (reducing mobility and improving Vt) from a thermal laser. Frequency mapping through Laser Voltage Imaging (LVI) was performed on the Ring Oscillator (RO) using the 1340nm thermal laser, while concurrently stimulating the transistors of the RO. Spatial distribution of stimulation was studied by observing the frequency changes on LVI.

A novel method for single and multiple damage detection in beams using relative natural frequency changes

2019 ◽  
Vol 132 ◽  
pp. 335-352 ◽  
Author(s):  
Ganggang Sha ◽  
Maciej Radzieński ◽  
Maosen Cao ◽  
Wiesław Ostachowicz
Keyword(s):  
Damage Detection ◽  
Natural Frequency ◽  
Novel Method ◽  
Frequency Changes

Radiation-Induced Frequency Changes in Quartz Oscillators

1988 ◽  
Vol 27 (S1) ◽  
pp. 114 ◽  
Author(s):  
Yoshio Shimoda ◽  
Takehiko Uno
Keyword(s):  
Radiation Induced ◽  
Frequency Changes

Sydney crease frequency changes among the newborns and infants

2007 ◽  
Vol 143A (4) ◽  
pp. 387-389 ◽  
Author(s):  
J. Román Corona-Rivera ◽  
Soledad Zarate-Ramírez ◽  
J. Jesús Pérez-Molina ◽  
Alfredo Corona-Rivera
Keyword(s):  
Frequency Changes

scholarly journals Damage detection in multi-span beams based on the analysis of frequency changes

2017 ◽  
Vol 842 ◽  
pp. 012033 ◽  
Author(s):  
G R Gillich ◽  
J L Ntakpe ◽  
M Abdel Wahab ◽  
Z I Praisach ◽  
M C Mimis
Keyword(s):  
Damage Detection ◽  
Frequency Changes

The resonance Raman spectra and excitation profiles of some 4-sulfamylazobenzenes

1977 ◽  
Vol 55 (9) ◽  
pp. 1444-1453 ◽  
Author(s):  
Kamal Kumar ◽  
P. R. Carey
Keyword(s):  
Raman Spectrum ◽  
Raman Spectra ◽  
Resonance Raman ◽  
Valence Bond ◽  
Wavelength Dependence ◽  
Accurate Estimation ◽  
Intensity Changes ◽  
Stretching Vibration ◽  
Resonance Raman Spectra ◽  
Frequency Changes

The resonance Raman spectra of three pharmacologically important sulfonamides, 4-sulfamyl-4′-dimethylaminoazobenzene (1), 4-sulfamyl-4′-hydroxyazobenzene (2), and 4-sulfamyl-4′-aminoazobenzene (3), are compared with those of analogues lacking the sulfonamide group. The —SO2NH2 moiety does not directly contribute intense or moderately intense bands to the resonance Raman spectra of 1, 2, and 3. However, —SO2NH2 ionization is reflected by frequency changes in a band near 1140 cm−1 and intensity changes in the 1420 cm−1 region. The normal Raman spectrum of 2 confirms that the intensity changes reflect —SO2NH2 ionization rather than unrelated changes in vibronic coupling. The effect of —OH ionization on the resonance Raman spectrum of 2 emphasizes that caution must be exercised when relating spectral perturbations to changes in contributions from valence bond type structures. Resonance Raman excitation profiles for the 1138, 1387, and 1416 cm−1 bands of 2 show that these bands gain intensity by coupling with the electronic transitions in the 240 to 450 nm region and that, more than 1000 cm−1 to the red of λmax, the wavelength dependence can be closely reproduced by the FB type terms of Albrecht and Hutley. The excitation profile for each band shows evidence for structure in the 470 nm region, although lack of sufficient excitation wavelengths prevents accurate estimation of the spacing. Under conditions of rigorous resonance the intense Raman lines all occur in the 1400 cm−1 region, i.e. they are 'bunched' in the region known to contain the —N=N— stretching vibration.

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