scholarly journals Rotational Analysis of the Rydberg Spectrum of Water

1991 ◽  
Vol 11 (3-4) ◽  
pp. 253-258 ◽  
Author(s):  
M. S. Child ◽  
R. D. Gilbert ◽  
Ch. Jungen
Keyword(s):  
Room Temperature ◽  
Quantum Defect ◽  
Rotational Analysis ◽  
Vibrational Levels ◽  
Quantum Defects ◽  
Asymmetric Top ◽  
Asymmetric Tops ◽  
Quantum Defect Theory ◽  
Good Agreement

Two techniques for rotational analysis of the nd←1b1 Rydberg spectra of H2O and D2O are discussed—a Coriolis coupled asymmetric top model for the room temperature 3d←1b1 cluster, and an extension of multichannel quantum defect theory to asymmetric tops, which is applied to recent jet cooled photoionization spectra of the nd←1b1 series converging to the (100) vibrational levels of H2O+ and D2O+. The quantum defects obtained by the two methods are in good agreement and new ionization limits to the (100) series are derived: IP(100) = 104985(2) cm−1 for H2O and 104262(1) cm−1 for D2O.

Dislocation structures around SiO2 Particles in aged Cu-Cr-SiO2

1978 ◽  
Vol 36 (1) ◽  
pp. 594-595
Author(s):  
N.J. Long ◽  
M.H. Loretto ◽  
C.H. Lloyd
Keyword(s):  
Flow Stress ◽  
Single Crystals ◽  
Room Temperature ◽  
Thin Foil ◽  
Age Hardening ◽  
Dispersion Strengthening ◽  
Accurate Picture ◽  
The Matrix ◽  
Very High ◽  
Good Agreement

IntroductionThere have been several t.e.m. studies (1,2,3,4) of the dislocation arrangements in the matrix and around the particles in dispersion strengthened single crystals deformed in single slip. Good agreement has been obtained in general between the observed structures and the various theories for the flow stress and work hardening of this class of alloy. There has been though some difficulty in obtaining an accurate picture of these arrangements in the case when the obstacles are large (of the order of several 1000's Å). This is due to both the physical loss of dislocations from the thin foil in its preparation and to rearrangement of the structure on unloading and standing at room temperature under the influence of the very high localised stresses in the vicinity of the particles (2,3).This contribution presents part of a study of the Cu-Cr-SiO2 system where age hardening from the Cu-Cr and dispersion strengthening from Cu-Sio2 is combined.

scholarly journals Bichromatic Photoassociation Spectroscopy for the Determination of Rotational Constants of Cs2 0 u + Long-Range State below the 6S1/2 + 6P1/2 Asymptote

Molecules ◽  
2020 ◽  
Vol 25 (17) ◽  
pp. 3963
Author(s):  
Jizhou Wu ◽  
Jie Ma ◽  
Yuqing Li ◽  
Wenliang Liu ◽  
Peng Li ◽  
...  
Keyword(s):  
Long Range ◽  
Spectroscopic Technique ◽  
Rigid Rotor ◽  
Simple Analysis ◽  
Rotational Constants ◽  
Vibrational Levels ◽  
Photoassociation Spectroscopy ◽  
Rotor Model ◽  
Good Agreement

This article demonstrates new observation of the high-resolution ro-vibrational bichromatic photoassociation spectra (BPAS) of Cs2 in the 0u+ long-range state below the asymptotes 6S1/2 + 6P1/2. By combining with a modulation spectroscopic technique, precise references of the frequency differences have been engineered through the BPAS, with which the rotational constants of low-lying vibrational levels of the Cs20u+ long-range state have been accurately determined by fitting the frequency differences to the non-rigid-rotor model. The rotational constants for the newly observed seven ro-vibrational levels are summarized and disagreement for the level ῦ = 498 is clarified. The rotational constants of different vibrational levels demonstrate strong perturbations of the related energy structures. A simple analysis is performed and shows good agreement with experimental results.

Defect Structure of MEV Si Implantation in GaAs

1988 ◽  
Vol 126 ◽  
Author(s):  
S.-Tong Lee ◽  
G. Braunstein ◽  
Samuel Chen
Keyword(s):  
Free Surface ◽  
Defect Structure ◽  
Room Temperature ◽  
Surface Region ◽  
Peak Position ◽  
Lattice Disorder ◽  
Depth Profiles ◽  
Trim Calculation ◽  
Good Agreement

ABSTRACTThe defect and atomic profiles for MeV implantation of Si in GaAs were investigated using He++ channeling, TEM, and SIMS. Doses of 1–10 × 1015Si/cm2 at 1–3 MeV were used. MeV implantation at room temperature rendered only a small amount of lattice disorder in GaAs. Upon annealing at 400°C for 1 h or 800°C for 30 a, we observed a ‘defect-free’ surface region (- 1 μ for 3 MeV implant). Below this region, extensive secondary defects were formed in a band which was 0.7 μ wide and centered at 2 μ for 3 MeV implant. These defects were mostly dislocations lying in the [111] plane. SIMS depth profiles of Si implants showed the Si peak to be very close to the peak position of the defects. The experimental profiles of Si were compared to the TRIM calculation; generally good agreement existed among the peak positions.

Analysis of Thermal Variation of Length and Refractive Index of Lead Fluoride to Study its Optical Properties

1989 ◽  
Vol 172 ◽  
Author(s):  
T. S. Aurora ◽  
D. O. Pederson ◽  
S. M. Day
Keyword(s):  
Refractive Index ◽  
Room Temperature ◽  
Linear Thermal Expansion ◽  
Small Variation ◽  
Published Data ◽  
Thermal Variation ◽  
Lead Fluoride ◽  
Superionic Phase Transition ◽  
Lorenz Relation ◽  
Good Agreement

AbstractLinear thermal expansion and refractive index variation have been measured in lead fluoride with a laser interferometer as a function of temperature. Data has been analyzed using the Lorentz-Lorenz relation. Molecular polarizability, band gap, variation of refractive index with density, and strain-polarizability parameter have been studied as a function of temperature. They exhibit a small variation with temperature except near the superionic phase transition where the variation appears to be more pronounced. The results are in good agreement with the published data near room temperature.

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