scholarly journals The Effect of Thin Film Deposition Angle and Substrate Surface Roughness on Film Dissolution in Molten 60% Sn–40% Pb Solder

1977 ◽  
Vol 4 (1) ◽  
pp. 43-46 ◽  
Author(s):  
L. J. Rickabaugh
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Substrate Surface ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Substrate Surface Roughness ◽  
Deposition Angle

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Phenethylammonium bismuth halides: from single crystals to bulky-organic cation promoted thin-film deposition for potential optoelectronic applications

2019 ◽  
Vol 7 (36) ◽  
pp. 20733-20741 ◽  
Author(s):  
Mehri Ghasemi ◽  
Miaoqiang Lyu ◽  
Md Roknuzzaman ◽  
Jung-Ho Yun ◽  
Mengmeng Hao ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Single Crystals ◽  
Organic Cation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Optoelectronic Applications ◽  
Excellent Stability

The phenethylammonium cation significantly promotes the formation of fully-covered thin-films of hybrid bismuth organohalides with low surface roughness and excellent stability.

The Plasma Deposition of Semiconductor Multilater Structures

1989 ◽  
Vol 165 ◽  
Author(s):  
Masataka Hirose ◽  
Seiichi Miyazaki
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Plasma Deposition ◽  
Substrate Surface ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Atomic Scale ◽  
Layer By Layer ◽  
X Ray

AbstractThe early stages of thin film deposition from the rf glow discharge of SiH4 or SiH4 + NH3 have been studied by analysing the structure of silicon based multiiayers consisting of hydrogenated amorphous silicon (a-Si:H, 10 – 200 A thick) and stoichiometric silicon nitride (a-Si3N4:H, 25 – 250 A) alternating layers. The x-ray diffraction, its rocking curve and x-ray interference of the multilayers have shown that the amorphous silicon/silicon nitride interface is atomically abrupt and the surfaces of the respective layers are atomically flat regardless of substrate materials. This indicates that the precursors impinging onto a substrate from the gas phase homogeneously cover the growing surface and the layer by layer growth proceeds on atomic scale. In the plasma deposition of the covalently bonded semiconductors and insulators, the island formation on a substrate surface at the beginning of the thin film growth is very unlikely.

Low Surface Roughness GaAs/Si Thin-Film Deposition Using Three-Step Growth Method in MBE

2020 ◽  
Vol 1014 ◽  
pp. 43-51
Author(s):  
Wei Wang ◽  
Ben Ma ◽  
Han Chao Gao ◽  
Hai Long Yu ◽  
Zhong Hui Li
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Semiconductor Layer ◽  
Material System ◽  
Epitaxial Gaas ◽  
Scanning Area ◽  
Growth Method ◽  
Step Growth

Epitaxial GaAs-on-Si is an ideal material system for studying the physics of mismatched heteroepitaxy of a polar semiconductor layer grown on a non-polar substrate like silicon. Understanding and optimization of the initial nucleation of GaAs on silicon is the most crucial step in the success of GaAs/Si heteroepitaxy. Molecular beam epitaxy (MBE) technique has been used to deposit hetero-epitaxial GaAs thin-film on off-angle Si (100) substrate using the three-step growth method. After optimizing the growth parameters of low temperature (LT) buffer layer and high temperature (HT) epilayer, XRD analyses were performed. Characterization results of the GaAs (004) films which were not subjected to annealing, show a full-width half maximum (FWHM) of 760.1 arc sec and a root mean square (RMS) surface roughness of lower than 1 nm for a scanning area of 10 μm × 10 μm.

CaBi4Ti4O15 thin film deposition on electroplated Platinum substrates using a sol-gel method

2008 ◽  
Vol 1113 ◽  
Author(s):  
Takeyasu Saito ◽  
Yuichiro Hirota ◽  
Mariko Ooyanagi ◽  
Naoki Okamoto ◽  
Kazuo Kondo ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Crystallization Temperature ◽  
Sol Gel ◽  
Void Formation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Orientation Control ◽  
Gel Method ◽  
Sol Gel Method

ABSTRACTCaBi4Ti4O15 growth on different Platinum substrates was carried out through a sol-gel method. Higher crystallization temperature and 20% excess Bi decreased pyrochlore contents in the CaBi4Ti4O15 films. Repetition through coating, calcination and crystallization decreased void formation on the surface. C-axis oriented thin film could be grown on sputtered platinum substrates with low Pt (200) orientation. On electroplated Pt substrates, (119) oriented CaBi4Ti4O15 thin film was grown, suggesting surface roughness of Pt substrates is a crucial factor for orientation control of sol-gel derived CaBi4Ti4O15 thin film.

scholarly journals A Study on the Wear Characteristics of Al7075 with Changes in Surface Roughness and Ti Thin Film Deposition Time

2020 ◽  
Vol 2020 ◽  
pp. 1-9
Author(s):  
Jihye An ◽  
Sunghoon Im ◽  
Haneul Kang ◽  
Hyunji Kim ◽  
Yunyoong Yoo ◽  
...  
Keyword(s):  
Thin Film ◽  
Surface Roughness ◽  
Wear Resistance ◽  
Extreme Environments ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Mechanical Parts ◽  
Materials Research ◽  
Predetermined Time ◽  
Representative Material

Mechanical parts have a problem of wear when used in extreme environments. Aluminum, most used in the industrial field, is a representative material of light weight, but its wear resistance is not good. To resolve the wear problem of such materials, research and development of surface thin film deposition technology has been increasing. Wear resistance was investigated after the Ti thin film was deposited by sputtering, one of the main methods of this technique. The smaller the surface roughness value and the thicker the thin film, the better the wear resistance. However, when a thin film is deposited for a predetermined time or less, the bonding strength with the base metal is lowered and the wear resistance is confirmed as low.

Sign in / Sign up

Export Citation Format

Share Document