scholarly journals Measurement of the Tunneling and Hopping Parameters in RuO2Thick Films

1984 ◽  
Vol 11 (2) ◽  
pp. 123-136 ◽  
Author(s):  
N. C. Halder ◽  
R. J. Snyder
Keyword(s):  
Particle Size ◽  
Temperature Coefficient ◽  
Thick Film ◽  
Ruthenium Oxide ◽  
Low Concentration ◽  
Weight Percentage ◽  
Temperature Coefficient Of Resistivity

Thick film resistors containing a mixture of ruthenium oxide (RuO2) and lead borosilicate (Pb5B2SiO10) have been produced on alumina[(Al2O3)·96(MgO)·04]substrates. The temperature coefficient of resistivity (TCR) of these films has been measured for different particle size and concentration (weight percentage) of the conductor particles. The TCR was found to be a function of temperature in all the films included here. From the measured values of negative TCR the tunneling parameterαand hopping parameterβwere determined. These results suggest that hopping is important for the low concentration films. For films with positive TCR only parameterαcould be determined. The parameterαincreased but the parameterβdecreased with temperature for the present films.

scholarly journals Electron Tunneling and Hopping Possibilites in RuO2Thick Films

1983 ◽  
Vol 11 (1) ◽  
pp. 21-34 ◽  
Author(s):  
N. C. Halder
Keyword(s):  
Activation Energy ◽  
Temperature Coefficient ◽  
Thick Film ◽  
Electron Tunneling ◽  
Activation Energies ◽  
Experimental Measurements ◽  
Temperature Minimum ◽  
Temperature Coefficient Of Resistivity

It is proposed in this paper that the temperature coefficient of resistivity (TCR) in thick film resistors arises from (i) the usual particle-to-particle conduction, (ii) electron tunneling, and (iii) the phononassisted hopping. Equations for activation energies are derived for the temperature minimum of the resistance with and without hopping. New equations for TCR are suggested. Some extensive calculations of TCR and activation energy have been made for RuO2thick film resistors, the results of which agree well with available experimental measurements.

Resistivity and temperature coefficient of resistivity of ruthenium oxide layers influence of morphology

1981 ◽  
Vol 14 (4) ◽  
pp. 335-343 ◽  
Author(s):  
G. Lodi ◽  
C. de Asmundis ◽  
S. Ardizzone ◽  
E. Sivieri ◽  
S. Trasatti
Keyword(s):  
Temperature Coefficient ◽  
Ruthenium Oxide ◽  
Oxide Layers ◽  
Temperature Coefficient Of Resistivity

Investigations of Lead-Free Glasses for Post-Fired and Embedded Thick Film Resistors

2013 ◽  
Vol 573 ◽  
pp. 137-142
Author(s):  
Shen Li Fu ◽  
Chi Shiung Hsi ◽  
Chun Yueh Kang ◽  
Hua Pin Chen ◽  
Siou Jyun Wang
Keyword(s):  
Metal Oxides ◽  
Temperature Coefficient ◽  
Thick Film ◽  
Glass Phase ◽  
Glass Structure ◽  
Ruthenium Oxide ◽  
Lead Free ◽  
Negative Direction ◽  
Volume Fractions

Lead-free thick film resistors (TFRs) were prepared by mixing of ruthenium oxide (RuO2) and CaO-B2O3-SiO2 based-glass. The resistors were post-fired on alumina and co-fired in LTCC substrates. Different metal oxides were added into the glass phase, such as Nb2O5, MnO2, MoO3, Fe2O3, TiO2. They were used as temperature coefficient of resistor (TCR) adjustment agents of the resistors. The microstructures variations and interactions at the interface between resistors and substrates were investigated. The additives made glass structure loose and conductivity of resistor decrease, the TCR values of the resistors moved toward negative direction. When 4wt% MnO2 was added into the glass, the thick-film resistors embedded in LTCC had conductivity of 2.46 (Ω-cm)-1, the temperature coefficient of resistor decreased to 12 ppm/°C. The conductivities of the resistors films were depended on the volume fractions of conductor-agglomeration (RuO2), microstructures, and TCR additives of the resistor layers

scholarly journals Thin Resistive Thick-Film Layers Based on Precious Metal Resinate/Glass Systems

1978 ◽  
Vol 5 (1) ◽  
pp. 41-43 ◽  
Author(s):  
P. Prinsen
Keyword(s):  
Particle Size ◽  
Temperature Coefficient ◽  
Thick Film ◽  
Precious Metal ◽  
Glass System ◽  
Volume Percent ◽  
Temperature Coefficient Of Resistance ◽  
Phase Temperature ◽  
Low Volume ◽  
Resistive Thick Film

This paper describes the preparation and results obtained with a ruthenium-resinate/glass resistive system prepared by firing on to a 96% alumina substrate. The results have been compared with a gold/rhodium-resinate/glass system. It is found in the ruthenium system that the particle size is about 200 Å and because of this, conduction occurs at a very low volume percent conduction phase. Temperature Coefficient of Resistance behaviour of the ruthenium based system is still anomalous.

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