scholarly journals Experimental and Theoretical Characterization of Thick and Thin Films for Microwave Uses on 99.6% Alumina Substrates

1983 ◽  
Vol 10 (2-3) ◽  
pp. 157-162 ◽  
Author(s):  
J. P. Ramy ◽  
R. Schnitzler ◽  
C. Thebault
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Copper Oxide ◽  
Ground Plane ◽  
Resistivity Measurement ◽  
Adhesive Layer ◽  
X Band ◽  
Quality Factor Q ◽  
Good Agreement

In a previous paper,1we showed, with a microwave quality factor (Q) measurement, that in the X band and with alumina substrates, thick film losses are not worse than thin film losses when the inks are screened then etched, and when they have copper oxide as adhesive layer and gold or copper as metal powder.Here, we extend this study to show that, our experimental results being in good agreement with theory, a simple D.C. resistivity measurement is sufficient to characterize these MIC'S metallizations and is as suitable as a microwave Q measurement. We also show that the nature of the ground plane cannot be neglected.

The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Sol Gel ◽  
Morphological Characterization ◽  
Experimental Result ◽  
X Ray Diffraction ◽  
Solution Deposition ◽  
Capacitance Voltage ◽  
Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

Simulation and prediction of optical characterization of casting (Adamantan-Fulgide) thin films using (CTANNs) approach

2019 ◽  
Vol 33 (11) ◽  
pp. 1950093 ◽  
Author(s):  
A. M. A. EL-Barry ◽  
D. M. Habashy
Keyword(s):  
Experimental Data ◽  
Thin Films ◽  
Back Propagation ◽  
Optical Characterization ◽  
Experimental Information ◽  
Training Algorithm ◽  
Energy Gaps ◽  
Resilient Back Propagation ◽  
Good Agreement

For reinforcement, the photochromic field and the cooperation between the theoretical and experimental branches of physics, the computational, theoretical artificial neural networks (CTANNs) and the resilient back propagation (R[Formula: see text]) training algorithm were used to model optical characterizations of casting (Admantan-Fulgide) thin films with different concentrations. The simulated values of ANN are in good agreement with the experimental data. The model was also used to predict values, which were not included in the training. The high precision of the model has been constructed. Moreover, the concentration dependence of both the energy gaps and Urbach’s tail were, also tested. The capability of the technique to simulate the experimental information with best accuracy and the foretelling of some concentrations which is not involved in the experimental data recommends it to dominate the modeling technique in casting (Admantan-Fulgide) thin films.

scholarly journals Microfluidic electrochemical cell for in situ structural characterization of amorphous thin-film catalysts using high-energy X-ray scattering

2019 ◽  
Vol 26 (5) ◽  
pp. 1600-1611 ◽  
Author(s):  
Gihan Kwon ◽  
Yeong-Ho Cho ◽  
Ki-Bum Kim ◽  
Jonathan D. Emery ◽  
In Soo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrochemical Cell ◽  
Porous Electrode ◽  
High Energy ◽  
Porous Electrodes ◽  
X Ray ◽  
Pdf Analysis ◽  
Thin Film Catalysts

Porous, high-surface-area electrode architectures are described that allow structural characterization of interfacial amorphous thin films with high spatial resolution under device-relevant functional electrochemical conditions using high-energy X-ray (>50 keV) scattering and pair distribution function (PDF) analysis. Porous electrodes were fabricated from glass-capillary array membranes coated with conformal transparent conductive oxide layers, consisting of either a 40 nm–50 nm crystalline indium tin oxide or a 100 nm–150 nm-thick amorphous indium zinc oxide deposited by atomic layer deposition. These porous electrodes solve the problem of insufficient interaction volumes for catalyst thin films in two-dimensional working electrode designs and provide sufficiently low scattering backgrounds to enable high-resolution signal collection from interfacial thin-film catalysts. For example, PDF measurements were readily obtained with 0.2 Å spatial resolution for amorphous cobalt oxide films with thicknesses down to 60 nm when deposited on a porous electrode with 40 µm-diameter pores. This level of resolution resolves the cobaltate domain size and structure, the presence of defect sites assigned to the domain edges, and the changes in fine structure upon redox state change that are relevant to quantitative structure–function modeling. The results suggest the opportunity to leverage the porous, electrode architectures for PDF analysis of nanometre-scale surface-supported molecular catalysts. In addition, a compact 3D-printed electrochemical cell in a three-electrode configuration is described which is designed to allow for simultaneous X-ray transmission and electrolyte flow through the porous working electrode.

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

Closed Loop Resonator Based Compact UWB Antenna with Single Notched Band Varying between WLAN and X-band for UWB Applications

Frequenz ◽  
2020 ◽  
Vol 74 (5-6) ◽  
pp. 201-209
Author(s):  
Mohammad Ahmad Salamin ◽  
Sudipta Das ◽  
Asmaa Zugari
Keyword(s):  
Closed Loop ◽  
Ground Plane ◽  
Frequency Range ◽  
Uwb Antenna ◽  
Notched Band ◽  
X Band ◽  
Compact Size ◽  
Simulation Results ◽  
Uwb Applications ◽  
Good Agreement

AbstractIn this paper, a novel compact UWB antenna with variable notched band characteristics for UWB applications is presented. The designed antenna primarily consists of an adjusted elliptical shaped metallic patch and a partial ground plane. The proposed antenna has a compact size of only 17 × 17 mm2. The suggested antenna covers the frequency range from 3.1 GHz to 12 GHz. A single notched band has been achieved at 7.4 GHz with the aid of integrating a novel closed loop resonator at the back plane of the antenna. This notched band can be utilized to alleviate the interference impact with the downlink X-band applications. Besides, a square slot was cut in the loop in order to obtain a variable notched band. With the absence and the existence of this slot, the notched band can be varied to mitigate interference of the upper WLAN band (5.72–5.82 GHz) and X-band (7.25–7.75 GHz) with UWB applications. A good agreement between measurement and simulation results was achieved, which affirms the appropriateness of this antenna for UWB applications.

CRITICAL BEHAVIOUR OF FERROELECTRIC THIN FILMS

2002 ◽  
Vol 16 (03) ◽  
pp. 473-480 ◽  
Author(s):  
JULIA M. WESSELINOWA ◽  
STEFFEN TRIMPER
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Scaling Laws ◽  
Transverse Field ◽  
Ferroelectric Thin Film ◽  
Ferroelectric Thin Films ◽  
Number Of Layers ◽  
Ising Systems ◽  
2D And 3D ◽  
Good Agreement

Based on an Ising model in a transverse field (TIM) and using a Green's function formalism the critical exponents of the polarization β and of the longitudinal susceptibility γ are calculated for a ferroelectric thin film consisting of N layers. The exponents depends on the number of layers in a significant manner. Whereas for N=3 layers the exponents are β=0.131 and γ=1.739 there is a change over to β=0.315 and γ=1.239 in case of N=30. The datas are in a good agreement with predictions for 2D and 3D Ising systems. Using scaling laws other exponents like α, δ, η and ν are obtained, too.

Optical Characterization of LaF3 by Variable Angle Purged UV Spectroscopic Ellipsometry

2013 ◽  
Vol 662 ◽  
pp. 243-248
Author(s):  
Wen Yuan Deng
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Optical Characterization ◽  
Theory Model ◽  
Material Dispersion ◽  
Optical Index ◽  
Variable Angle ◽  
Selection Of

The optical characterization of LaF3 thin film in DUV spectral range was experimental investigated by using a variable angle purged UV spectroscopic ellipsometer. In order to take into account the inhomogeneity, a theory model that dividing the single thin film into several sublayers was adopted. Two kinds of LaF3 thin films fabricated on fused silicate substrate with different substrates temperature were tested. From the obtained optical index and the physical thickness of different sublayer in the two different kinds of LaF3 thin films, it was found that, the inhomogeneity of the LaF3 thin film deposited with substrate temperature at 300°C was stronger than that of the LaF3 thin film deposited with substrate temperature at 250°C, indicating that the substrate temperature has important influence on the optical index and inhomogeneity of LaF3 thin films. For both of the two kinds LaF3 thin films, the agreement between the measured transmittance and the simulated transmittance using the parameters from regression of SE was nice, indicating that the selection of the material dispersion law and regression procedure were successful.

Physical Characterization of Zirconium Doped Zinc Oxide Thin Firms Deposited by Spray Pyrolysis

1998 ◽  
Vol 520 ◽  
Author(s):  
A. Maldonado ◽  
D.R. Acosta ◽  
M. De La Luz Olvera ◽  
R. Castanedo ◽  
G. Torres ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Spray Pyrolysis ◽  
Doping Concentration ◽  
Film Properties ◽  
Preferential Growth ◽  
X Ray ◽  
Substrate Temperatures

ABSTRACTZinc oxide thin films doped with zirconium were prepared from solutions with doping material dispersed at several concentrations and using the spray pyrolysis technique.The films were deposited over sodocalcic glasses at different substrate temperatures. Effects of doping material concentration and substrate temperatures on electrical, optical, structural and morphological film properties are presented. Results show an evolution in morphology and grains size as the doping concentration is increased. Preferential growth in the (002) orientation was detected for each thin film from X ray diffractograms.

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