scholarly journals A Simulative Approach to Electron Conduction in Thick-Film Resistors

1983 ◽  
Vol 10 (2-3) ◽  
pp. 103-110 ◽  
Author(s):  
C. Jacoboni ◽  
M. Prudenziati ◽  
A. Rizzi
Keyword(s):  
Thick Film ◽  
External Force ◽  
Electrical Transport ◽  
Localized States ◽  
Electron Conduction ◽  
Ordered Response ◽  
Metallic Grains

A simulative approach to the calculation of electrical transport in thick-film resistors is presented, in which electrons are considered to hop from and to metallic grains and localized states in the glass. For concentrations of metallic grains sufficiently low and of localized states sufficiently high, a maximum in conductivity as a function of temperature is obtained due to a balance between the tendency of temperature to favour hopping and to oppose an ordered response to an external force.

Electrical Transport in Mesoporous Silicon Layers

1994 ◽  
Vol 358 ◽  
Author(s):  
M. Ben-Chorin ◽  
S. Grebner ◽  
F. Wang ◽  
R. Schwarz ◽  
A. Nikolov ◽  
...  
Keyword(s):  
Electrical Transport ◽  
Surface States ◽  
Dark Conductivity ◽  
Free Standing ◽  
Electron Conduction ◽  
Mesoporous Silicon ◽  
Methanol Vapor ◽  
Quantum Confinement Effects ◽  
P Type

ABSTRACTIn order to clarify the role of the enlarged surface area of porous silicon on the electrical conductivity, we have studied the transport in mesoporous silicon layers, for which quantum confinement effects are negligible. We prepare free standing mesoporous films, from highly doped p-type Si wafers. The dark conductivity of the mesoporous layers is activated with an energy of 0.5 eV. Thermopower measurements show negative sign indicating electron conduction. The exposure of these layers to methanol vapor results in an increased conductivity and change of the thermopower magnitude. Photoconductivity measurements and the Steady-State Photocarrier Grating technique (SSPG) are used to evaluate the density of the surface states and the dynamics of the photo-excited carriers. All these results indicate that a large density of surface states exist, which results in a depletion of the free holes.

Electrical transport in porous silicon from improved complex impedance analysis

2000 ◽  
Vol 638 ◽  
Author(s):  
B. Remaki ◽  
S. Perichon ◽  
V. Lysenko ◽  
D. Barbier
Keyword(s):  
Porous Silicon ◽  
Electrical Transport ◽  
Accurate Determination ◽  
Complex Impedance ◽  
Impedance Analysis ◽  
Columnar Structure ◽  
Localized States ◽  
Transport Parameters ◽  
Low Frequencies ◽  
Free Carriers

AbstractAn improved analysis of the electrical transport parameters in meso-porous silicon is presented. Our approach is based on a separate contribution of the crystallites and their interconnections to the total impedance of meso-porous silicon layers. Meso-porous silicon morphology exhibits a columnar structure without quantum confinement. The electrical conduction is thus, partially due to the bulk conductivity within continuous paths of crystallites. The samples were realized on 0.02ω-cm p-type Si substrates. Porous silicon layers of 100µm of thickness and 50% of porosity were inserted in Al/SiO2/porous-Si/Si structures. Their electronic transport parameters were determined using complex impedance measurements. A frequency range of 102 - 107 Hz was used allowing an accurate determination of the impedance components. Combined with thermal stimulation, theses measurements provide a powerful tool for the interpretation of basic properties such as the carriers density in the crystallites and the trapping mechanisms. Our results were interpreted in terms of free carriers conduction in partially compensated crystallites prevailing at low frequencies. At high frequencies (above 10 kHz), the electrical conductivity is mainly controlled by hopping transport on localized states in the chaotic porous structure. Finally, the free carriers mobility, evaluated from SCLC measurement is discussed.

scholarly journals Electrical Transport in Thick Film (Cermet) Resistors

1983 ◽  
Vol 10 (4) ◽  
pp. 285-293 ◽  
Author(s):  
Maria Prudenziati
Keyword(s):  
Electrical Properties ◽  
Thick Film ◽  
Electrical Transport ◽  
Research Groups ◽  
Conduction Mechanisms ◽  
Available Information

Though for many decades have we had thick-film resistors (TFRs) with good electrical properties, no well established model for describing their conduction mechanisms has been achieved. However the efforts of some research groups in U.S.A. and Europe in the last years have had success in improving our knowledge of the microstructure and of a large spectrum of electrical properties of TFRs. The available information narrows the field of possibilities for conduction mechanisms in TFRs. Though no conclusive assessment is yet possible, some lines for further progress can be precisely delineated.

scholarly journals The Undoped Polycrystalline Diamond Film—Electrical Transport Properties

Sensors ◽  
2021 ◽  
Vol 21 (18) ◽  
pp. 6113
Author(s):  
Szymon Łoś ◽  
Kazimierz Fabisiak ◽  
Kazimierz Paprocki ◽  
Mirosław Szybowicz ◽  
Anna Dychalska
Keyword(s):  
Transport Properties ◽  
Electrical Transport ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Localized States ◽  
X Ray Diffraction ◽  
Electrical Transport Properties ◽  
Temperature Range ◽  
Hot Filament ◽  
Si Wafer

The polycrystalline diamonds were synthesized on n-type single crystalline Si wafer by Hot Filament CVD method. The structural properties of the obtained diamond films were checked by X-ray diffraction and Raman spectroscopy. The conductivity of n-Si/p-diamond, sandwiched between two electrodes, was measured in the temperature range of 90–300 K in a closed cycle cryostat under vacuum. In the temperature range of (200–300 K), the experimental data of the conductivity were used to obtain the activation energies Ea which comes out to be in the range of 60–228 meV. In the low temperature region i.e., below 200 K, the conductivity increases very slowly with temperature, which indicates that the conduction occurs via Mott variable range hopping in the localized states near Fermi level. The densities of localized states in diamond films were calculated using Mott’s model and were found to be in the range of 9×1013 to 5×1014eV−1cm−3 depending on the diamond’s surface hydrogenation level. The Mott’s model allowed estimating primal parameters like average hopping range and hopping energy. It has been shown that the surface hydrogenation may play a crucial role in tuning transport properties.

scholarly journals Electrical Transport in Thick Film Resistors

1980 ◽  
Vol 6 (3-4) ◽  
pp. 141-145 ◽  
Author(s):  
Robert M. Hill
Keyword(s):  
State Physics ◽  
Solid State ◽  
Thick Film ◽  
Electrical Transport ◽  
Carrier Transport ◽  
State Theory ◽  
Critical Assessment ◽  
Sufficient Information ◽  
Solid State Physics ◽  
Solid State Theory

It is only in the last ten years or so that solid state physics has had the temerity to consider that real solids are neither perfect nor pure, whereas for many years all resistors of reasonable quality have been impure, highly doped, and clearly disordered in structure. As solid state theory has developed there have been attempts to understand the resistor problem but until now, with hindsight, we can say that the tools required have not been available. The situation is, even now, not perfectly clear but there is sufficient information available to make a critical assessment of the methods that can be applied and to indicate where the solution to the problem of carrier transport in resistor materials might lie.

Electrical Behavior of Pure and Cu Doped Diamondlike Carbon Prepared by Pulsed Laser Deposition

1999 ◽  
Vol 593 ◽  
Author(s):  
Q. Wei ◽  
A. K. Sharma ◽  
S. Yamolenko ◽  
J. Sankar ◽  
J. Narayan
Keyword(s):  
Pulsed Laser Deposition ◽  
Electrical Transport ◽  
Pulsed Laser ◽  
Liquid Nitrogen Temperature ◽  
Carbon Films ◽  
Localized States ◽  
Laser Deposition ◽  
Transmission Electron ◽  
Diamondlike Carbon ◽  
P Type

ABSTRACTWe have prepared pure diamondlike carbon films and Cu doped diamondlike carbon films through pulsed laser deposition. The Cu concentration does not exceed 3.0 atomic percent. Electrical conduction studies were carried out on the films to understand the electrical transport mechanism. It was found that both pure DLC and Cu doped DLC are of p-type conduction. Incorporation of Cu into the DLC films decreases the resistivity significantly. Transmission electron microscopy and radial distribution function analyses showed that the DLC films are typical tetrahedral amorphous carbon. The conductivity of Cu doped DLC films exhibited T1/2 temperature dependence, rather than the T1/4 dependence (Mott-Davis law). This dependence was observed within a wide temperature range (from below liquid nitrogen temperature to near room temperature). The T1/2 dependence was explained on the basis of the Efros-Shklovskii model which considers the long range Coulomb interaction between localized states

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