scholarly journals Q-Switched and Mode-Locked Nd/Cr:YAG Ceramic Pulse Laser

2020 ◽  
Vol 2020 ◽  
pp. 1-7
Author(s):  
T. Saiki ◽  
N. Hirota ◽  
S. Kanemori ◽  
Y. Iida

A mode-locked and Q-switched short pulse laser using the Nd3+/Cr3+:YAG ceramic has been constructed with a SESAM and Cr4+:YAG crystal optical switch based on excite state absorption (ESA). Laser oscillations of the pulse laser were observed experimentally. The Nd/Cr:YAG ceramic laser has a high conversion efficiency from white light (such as lamp light or solar light) to the laser. The Nd/Cr:YAG ceramic has a higher laser gain than the Nd:YAG laser for the same pumping power. The laser oscillation can be obtained very easily. A single-mode-locked laser pulse with fast modulation on the order of 100 ps was obtained in some pump power regimes when using the Cr4+:YAG crystal. The obtained pulse duration of the short pulse was a few hundred ps. A maximum peak power of 60 kW was obtained when using a SESAM. The same level of peak power (60 kW) was also obtained when using the Cr4+:YAG crystal.

2018 ◽  
Vol 47 (6) ◽  
pp. 606007
Author(s):  
李景照 Li Jingzhao ◽  
陈振强 Chen Zhenqiang ◽  
朱思祁 Zhu Siqi

Author(s):  
F. Beaudoin ◽  
P. Perdu ◽  
C. DeNardi ◽  
R. Desplats ◽  
J. Lopez ◽  
...  

Abstract Ultra-short pulse laser ablation is applied to IC backside sample preparation. It is contact-less, non-thermal, precise and can ablate the various types of material present in IC packages. This study concerns the optimization of ultra-short pulse laser ablation for silicon thinning. Uncontrolled silicon roughness and poor uniformity of the laser thinned cavity needed to be tackled. Special care is taken to minimize the silicon RMS roughness to less than 1µm. Application to sample preparation of 256Mbit devices is presented.


2013 ◽  
Vol 115 (4) ◽  
pp. 1469-1477 ◽  
Author(s):  
Evgeny Kharanzhevskiy ◽  
Sergey Reshetnikov

1994 ◽  
Author(s):  
Ronnie Shepherd ◽  
Rex Booth ◽  
Dwight Price ◽  
Rosemary Walling ◽  
Richard More ◽  
...  

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