scholarly journals Effects of Strategically Placed Water Droplets on Monolayer Growth of Molybdenum Disulfide

2018 ◽  
Vol 2018 ◽  
pp. 1-8 ◽  
Author(s):  
Yan Jiang ◽  
Yuankun Lin ◽  
Jingbiao Cui ◽  
Usha Philipose
Keyword(s):  
Molybdenum Disulfide ◽  
Growth Parameters ◽  
High Reliability ◽  
Strong Dependence ◽  
Chemical Vapor ◽  
Great Promise ◽  
Growth Substrate ◽  
Water Droplets ◽  
Force Microscopy ◽  
Monolayer Growth

Two-dimensional (2D) molybdenum disulfide (MoS2) films with a tunable bandgap hold great promise for next-generation electronic and optoelectronic devices. Synthesis of large areas of high-quality MoS2 monolayers lacks experimental reproducibility. Moreover, the outcome of MoS2 growth by chemical vapor deposition is dependent on several interconnected growth parameters. In this study, we present results of MoS2 monolayer growth by strategically placing water droplets on the growth substrate and/or in the source prior to its loading in the growth chamber. The volume and distribution of water on the growth substrate and in the source had a direct impact on the morphology of the as-grown MoS2. Characterized by scanning electron microscopy (SEM), Raman microscopy, and atomic force microscopy (AFM), the number and size of MoS2 layers as well as its distribution on the growth substrate were found to have a strong dependence on the positioning of the water droplet. This study on MoS2 monolayer growth using water droplets as a promoter provides a simple and reproducible experimental technique enabling growth with high reliability.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

scholarly journals Growth of U-Shaped Graphene Domains on Copper Foil by Chemical Vapor Deposition

Materials ◽  
2019 ◽  
Vol 12 (12) ◽  
pp. 1887
Author(s):  
Ming Pan ◽  
Chen Wang ◽  
Hua-Fei Li ◽  
Ning Xie ◽  
Ping Wu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Growth Parameters ◽  
Copper Substrate ◽  
Chemical Vapor ◽  
Morphology Evolution ◽  
Force Microscopy ◽  
Smooth Edge ◽  
Transmission Electron

U-shaped graphene domains have been prepared on a copper substrate by chemical vapor deposition (CVD), which can be precisely tuned for the shape of graphene domains by optimizing the growth parameters. The U-shaped graphene is characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM), transmission electron microscopy (TEM), and Raman. These show that the U-shaped graphene has a smooth edge, which is beneficial to the seamless stitching of adjacent graphene domains. We also studied the morphology evolution of graphene by varying the flow rate of hydrogen. These findings are more conducive to the study of morphology evolution, nucleation, and growth of graphene domains on the copper substrate.

scholarly journals Influence of the growth parameters on TiO2 thin films deposited using the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (308) ◽  
pp. 192-198 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters ◽  
Different Temperatures

In this work we report the synthesis of TiO2 thin films by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during the growth in the obtained structural characteristics was studied. Different temperatures of the organometallic bath, deposition time, temperature and type of the substrate were combined. Using Scanning Electron Microscopy associated to Electron Dispersive X-Ray Spectroscopy, Atomic Force Microscopy and X-ray Diffraction, the strong influence of these parameters in the thin films final microstructure was verified.

Effect of Annealing in Atomic Hydrogen or Nitrogen Atmospheres on SiOx Nanoclusters Obtained by HFCVD

2009 ◽  
Vol 5 ◽  
pp. 105-111 ◽  
Author(s):  
G. García-Salgado ◽  
T. Díaz-Becerril ◽  
A. Coyopol ◽  
E. Rosendo-Andrés ◽  
H. Juárez ◽  
...  
Keyword(s):  
Atomic Hydrogen ◽  
Silicon Oxide ◽  
Deep Level ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Hydrogen Atmosphere ◽  
Nitrogen Atmosphere ◽  
Photoluminescence Intensity ◽  
Force Microscopy ◽  
Hot Filament

SiOx nanoclusters were obtained by Hot Filament Chemical Vapor Deposition using a quartz solid source and atomic hydrogen. The nanoclusters were characterized by Photoluminescence, Atomic Force Microscopy, Energy Dispersive Analysis X-ray and Fourier Transform Infrared Spectroscopy. FTIR and EDS characterization clearly show that the material is non stoichiometric silicon oxide with a composition that depends on the growth parameters, such as source-substrate distance and time of growth. Nanoclusters of SiOx presented photoluminescence with two principal peaks at around 859 and 920 nm. Photoluminescence intensity was enhanced when samples were annealed in hydrogen atmosphere and quenched when they were annealed in nitrogen atmosphere. However, it was observed that the same samples annealed once more with the initial atomic hydrogen conditions showed an increase in photoluminescence. From these results we suppose the photoluminescence produced in this material is influenced by deep level transitions associated with dangling bonds passivated with hydrogen on the surface of the Si crystallites embedded within SiOx nanoclusters.

Development of the UHV-STM

1990 ◽  
Vol 48 (1) ◽  
pp. 322-323
Author(s):  
M. Iwatsuki ◽  
S. Kitamura ◽  
A. Mogami
Keyword(s):  
Surface Science ◽  
Real Space ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Great Promise ◽  
Force Microscopy ◽  
Atomic Force ◽  
Stm Image ◽  
Surface Construction ◽  
Very High

Since Binnig, Rohrer and associates observed real-space topographic images of Si(111)-7×7 and invented the scanning tunneling microscope (STM),1) the STM has been accepted as a powerful surface science instrument.Recently, many application areas for the STM have been opened up, such as atomic force microscopy (AFM), magnetic force microscopy (MFM) and others. So, the STM technology holds a great promise for the future.The great advantages of the STM are its high spatial resolution in the lateral and vertical directions on the atomic scale. However, the STM has difficulty in identifying atomic images in a desired area because it uses piezoelectric (PZT) elements as a scanner.On the other hand, the demand to observe specimens under UHV condition has grown, along with the advent of the STM technology. The requirment of UHV-STM is especially very high in to study of surface construction of semiconductors and superconducting materials on the atomic scale. In order to improve the STM image quality by keeping the specimen and tip surfaces clean, we have built a new UHV-STM (JSTM-4000XV) system which is provided with other surface analysis capability.

Effectiveness and Reliability of Metal Diffusion Barriers for Copper Interconnects

1995 ◽  
Vol 403 ◽  
Author(s):  
G. Bai ◽  
S. Wittenbrock ◽  
V. Ochoa ◽  
R. Villasol ◽  
C. Chiang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Physical Vapor Deposition ◽  
Chemical Vapor ◽  
Diffusion Barriers ◽  
Copper Interconnects ◽  
Time To Failure ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

AbstractCu has two advantages over Al for sub-quarter micron interconnect application: (1) higher conductivity and (2) improved electromigration reliability. However, Cu diffuses quickly in SiO2and Si, and must be encapsulated. Polycrystalline films of Physical Vapor Deposition (PVD) Ta, W, Mo, TiN, and Metal-Organo Chemical Vapor Deposition (MOCVD) TiN and Ti-Si-N have been evaluated as Cu diffusion barriers using electrically biased-thermal-stressing tests. Barrier effectiveness of these thin films were correlated with their physical properties from Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), Secondary Electron Microscopy (SEM), and Auger Electron Spectroscopy (AES) analysis. The barrier failure is dominated by “micro-defects” in the barrier film that serve as easy pathways for Cu diffusion. An ideal barrier system should be free of such micro-defects (e.g., amorphous Ti-Si-N and annealed Ta). The median-time-to-failure (MTTF) of a Ta barrier (30 nm) has been measured at different bias electrical fields and stressing temperatures, and the extrapolated MTTF of such a barrier is > 100 year at an operating condition of 200C and 0.1 MV/cm.

scholarly journals Morphological Evolution of Vertically Standing Molybdenum Disulfide Nanosheets by Chemical Vapor Deposition

Materials ◽  
2018 ◽  
Vol 11 (4) ◽  
pp. 631 ◽  
Author(s):  
Song Zhang ◽  
Jiajia Liu ◽  
Karla Ruiz ◽  
Rong Tu ◽  
Meijun Yang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Molybdenum Disulfide ◽  
Vapor Deposition ◽  
Morphological Evolution ◽  
Chemical Vapor ◽  
Molybdenum Disulfide Nanosheets

scholarly journals Photothermal Deflection Spectroscopy Study of Nanocrystalline Si (nc-Si) Thin Films Deposited on Porous Aluminum with PECVD

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
S. Ktifa ◽  
M. Ghrib ◽  
F. Saadallah ◽  
H. Ezzaouia ◽  
N. Yacoubi
Keyword(s):  
Optical Properties ◽  
Energy Gap ◽  
Chemical Vapor ◽  
Nanocrystalline Silicon ◽  
Porous Aluminum ◽  
Force Microscopy ◽  
Photothermal Deflection Spectroscopy ◽  
Atomic Force ◽  
Photothermal Deflection ◽  
Morphology Characterization

We have studied the optical properties of nanocrystalline silicon (nc-Si) film deposited by plasma enhancement chemical vapor deposition (PECVD) on porous aluminum structure using, respectively, the Photothermal Deflection Spectroscopy (PDS) and Photoluminescence (PL). The aim of this work is to investigate the influence of anodisation current on the optical properties of the porous aluminum silicon layers (PASL). The morphology characterization studied by atomic force microscopy (AFM) technique has shown that the grain size of (nc-Si) increases with the anodisation current. However, a band gap shift of the energy gap was observed.

Compact and Efficient HFCVD for Electronic Grade Diamond and Related Materials

2009 ◽  
Vol 1203 ◽  
Author(s):  
R. Vispute ◽  
Andrew Seiser ◽  
Geun Lee ◽  
Jaurette Dozier ◽  
Jeremy Feldman ◽  
...  
Keyword(s):  
Diamond Film ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Deposition Efficiency ◽  
Raman Shift ◽  
Compositional Variation ◽  
Force Microscopy ◽  
Substrate Rotation ◽  
Sample Rotation ◽  
Hot Filament

AbstractA compact and efficient hot filament chemical vapor deposition system has been designed for growing electronic-grade diamond and related materials. We report here the effect of substrate rotation on quality and uniformity of HFCVD diamond films on 2” wafers, using two to three filaments with power ranging from 500 to 600 Watt. Diamond films have been characterized using x-ray diffraction, Raman Spectroscopy, scanning electron microscopy and atomic force microscopy. Our results indicate that substrate rotation not only yields uniform films across the wafer, but crystallites grow larger than without sample rotation. Well-faceted microcrystals are observed for wafers rotated at 10 rpm. We also find that the Raman spectrum taken from various locations indicate no compositional variation in the diamond film and no significant Raman shift associated with intrinsic stresses. Results are discussed in the context of growth uniformity of diamond film to improve deposition efficiency for wafer-based electronic applications.

Atomic Force Microscopy Studies on Molybdenum Disulfide Flakes as Sodium-Ion Anodes

Nano Letters ◽  
2015 ◽  
Vol 15 (2) ◽  
pp. 1018-1024 ◽  
Author(s):  
Steven D. Lacey ◽  
Jiayu Wan ◽  
Arthur von Wald Cresce ◽  
Selena M. Russell ◽  
Jiaqi Dai ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Molybdenum Disulfide ◽  
Sodium Ion ◽  
Force Microscopy ◽  
Atomic Force
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