scholarly journals Donor Impurity-Related Optical Absorption in GaAs Elliptic-Shaped Quantum Dots

2017 ◽  
Vol 2017 ◽  
pp. 1-18 ◽  
Author(s):  
M. A. Londoño ◽  
R. L. Restrepo ◽  
J. H. Ojeda ◽  
Huynh Vinh Phuc ◽  
M. E. Mora-Ramos ◽  
...  

The conduction band and electron-donor impurity states in elliptic-shaped GaAs quantum dots under the effect of an externally applied electric field are calculated within the effective mass and adiabatic approximations using two different numerical approaches: a spectral scheme and the finite element method. The resulting energies and wave functions become the basic information needed to evaluate the interstate optical absorption in the system, which is reported as a function of the geometry, the electric field strength, and the temperature.

2014 ◽  
Vol 73 ◽  
pp. 171-184 ◽  
Author(s):  
E. Kasapoglu ◽  
F. Ungan ◽  
H. Sari ◽  
I. Sökmen ◽  
M.E. Mora-Ramos ◽  
...  

2011 ◽  
Vol 268-270 ◽  
pp. 412-417 ◽  
Author(s):  
Ferhat Tighilt

The voltage and electric field distribution in an arrester are very important for its long operation 15 kV with and without pollution. In order to clarify the influence of pollution severity conditions on metal oxide surge arrester, the finite element method (FEM) compilation of the voltage distribution in the ZnO column varistors under different pollution layer conductivity (200 μS, 70μS, 20μS) and clean was employed using the FEMLAB package.


Heliyon ◽  
2020 ◽  
Vol 6 (1) ◽  
pp. e03194 ◽  
Author(s):  
M.E. Mora-Ramos ◽  
A. El Aouami ◽  
E. Feddi ◽  
A. Radu ◽  
R.L. Restrepo ◽  
...  

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