scholarly journals Microscopic Examination of Cold Spray Cermet Sn+In2O3Coatings for Sputtering Target Materials

Scanning ◽  
2017 ◽  
Vol 2017 ◽  
pp. 1-10 ◽  
Author(s):  
M. Winnicki ◽  
A. Baszczuk ◽  
M. Rutkowska-Gorczyca ◽  
M. Jasiorski ◽  
A. Małachowska ◽  
...  

Low-pressure cold spraying is a newly developed technology with high application potential. The aim of this study was to investigate potential application of this technique for producing a new type of transparent conductive oxide films target. Cold spraying technique allows the manufacture of target directly on the backing plate; therefore the proposed sputtering target has a form of Sn+In2O3coating sprayed onto copper substrate. The microstructure and properties of the feedstock powder prepared using three various methods as well as the deposited ones by low-pressure cold spraying coatings were evaluated, compared, and analysed. Produced cermet Sn+In2O3targets were employed in first magnetron sputtering process to deposit preliminary, thin, transparent conducting oxide films onto the glass substrates. The resistivity of obtained preliminary films was measured and allows believing that fabrication of TCO (transparent conducting oxide) films using targets produced by cold spraying is possible in the future, after optimization of the deposition conditions.

Author(s):  
Jongbum Kim ◽  
Yang Zhao ◽  
Aveek Dutta ◽  
Sajid M. Choudhury ◽  
Alexander V. Kildishev ◽  
...  

2004 ◽  
Vol 461 (2) ◽  
pp. 309-315 ◽  
Author(s):  
E.J.J Martin ◽  
M Yan ◽  
M Lane ◽  
J Ireland ◽  
C.R Kannewurf ◽  
...  

2011 ◽  
Vol 1315 ◽  
Author(s):  
Paul R. Chalker ◽  
Paul A. Marshall ◽  
Simon Romani ◽  
Matthew J. Rosseinsky ◽  
Simon Rushworth ◽  
...  

ABSTRACTThin transparent conducting oxide (TCO) films of gallium-doped zinc oxide have been deposited on glass substrates by atomic layer deposition (ALD) using diethyl zinc, triethyl gallium and water vapour as precursors. The gallium-doped zinc oxide films were deposited over the temperature range 100-350°C. Transmission electron microscopy reveals that the as-deposited films are polycrystalline in character. The electrical resistivity of the gallium-doped zinc oxide films was evaluated using four-point probe and contactless measurement methods as a function of film thickness. The lowest sheet resistance of 16 Ω/☐ was measured from a film thickness of 400nm and a gallium content of 5 atomic percent. The electron Hall mobility of this film was 12.3 cm2/Vs. The visible transmittance of the films was 78% with a haze of 0.2%.


2016 ◽  
Vol 27 (5) ◽  
pp. 4913-4922 ◽  
Author(s):  
M. Duta ◽  
M. Anastasescu ◽  
J. M. Calderon-Moreno ◽  
L. Predoana ◽  
S. Preda ◽  
...  

2011 ◽  
Vol 4 (4) ◽  
pp. 1570-1573 ◽  
Author(s):  
Yun-Hae Kim ◽  
Do-Wan Kim ◽  
Ri-Ichi Murakami ◽  
Dongyan Zhang ◽  
Sung-Won Yoon ◽  
...  

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