scholarly journals Using a Bayesian Network to Predict L5/S1 Spinal Compression Force from Posture, Hand Load, Anthropometry, and Disc Injury Status

2017 ◽  
Vol 2017 ◽  
pp. 1-7 ◽  
Author(s):  
Richard E. Hughes
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Bayesian Networks ◽  
Biomechanical Model ◽  
Biomechanical Modeling ◽  
Compression Force ◽  
Probability Estimates ◽  
Spinal Compression ◽  
Disc Injury ◽  
Injury Status

Stochastic biomechanical modeling has become a useful tool most commonly implemented using Monte Carlo simulation, advanced mean value theorem, or Markov chain modeling. Bayesian networks are a novel method for probabilistic modeling in artificial intelligence, risk modeling, and machine learning. The purpose of this study was to evaluate the suitability of Bayesian networks for biomechanical modeling using a static biomechanical model of spinal forces during lifting. A 20-node Bayesian network model was used to implement a well-established static two-dimensional biomechanical model for predicting L5/S1 compression and shear forces. The model was also implemented as a Monte Carlo simulation in MATLAB. Mean L5/S1 spinal compression force estimates differed by 0.8%, and shear force estimates were the same. The model was extended to incorporate evidence about disc injury, which can modify the prior probability estimates to provide posterior probability estimates of spinal compression force. An example showed that changing disc injury status from false to true increased the estimate of mean L5/S1 compression force by 14.7%. This work shows that Bayesian networks can be used to implement a whole-body biomechanical model used in occupational biomechanics and incorporate disc injury.

Risk Analysis using Monte Carlo Simulation and Bayesian Networks

2006 ◽  
Author(s):  
Claudio Flores ◽  
Fernando Makiyama ◽  
Silvia Nassar ◽  
Paulo Freitas ◽  
Carlos Jacinto
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Risk Analysis ◽  
Bayesian Networks

Electron Scattering in Solids

1990 ◽  
Vol 48 (2) ◽  
pp. 4-5
Author(s):  
Ryuichi Shimizu ◽  
Ze-Jun Ding
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Angular Distribution ◽  
Elastic Scattering ◽  
Electron Scattering ◽  
Cross Sections ◽  
Expansion Method ◽  
Electron Excitation ◽  
Partial Wave Expansion ◽  
Backscattered Electrons

Monte Carlo simulation has been becoming most powerful tool to describe the electron scattering in solids, leading to more comprehensive understanding of the complicated mechanism of generation of various types of signals for microbeam analysis.The present paper proposes a practical model for the Monte Carlo simulation of scattering processes of a penetrating electron and the generation of the slow secondaries in solids. The model is based on the combined use of Gryzinski’s inner-shell electron excitation function and the dielectric function for taking into account the valence electron contribution in inelastic scattering processes, while the cross-sections derived by partial wave expansion method are used for describing elastic scattering processes. An improvement of the use of this elastic scattering cross-section can be seen in the success to describe the anisotropy of angular distribution of elastically backscattered electrons from Au in low energy region, shown in Fig.l. Fig.l(a) shows the elastic cross-sections of 600 eV electron for single Au-atom, clearly indicating that the angular distribution is no more smooth as expected from Rutherford scattering formula, but has the socalled lobes appearing at the large scattering angle.

Determination of Stoichiometry of GaAs Component in (Gaas)Ge Epitaxially Grown Thin Films by Electron Microprobe X-Ray Analysis

1990 ◽  
Vol 48 (2) ◽  
pp. 264-265
Author(s):  
D. R. Liu ◽  
S. S. Shinozaki ◽  
R. J. Baird
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Compound Semiconductors ◽  
Energy Dispersive Analysis ◽  
X Ray ◽  
Metastable Alloys ◽  
Lower Voltage

The epitaxially grown (GaAs)Ge thin film has been arousing much interest because it is one of metastable alloys of III-V compound semiconductors with germanium and a possible candidate in optoelectronic applications. It is important to be able to accurately determine the composition of the film, particularly whether or not the GaAs component is in stoichiometry, but x-ray energy dispersive analysis (EDS) cannot meet this need. The thickness of the film is usually about 0.5-1.5 μm. If Kα peaks are used for quantification, the accelerating voltage must be more than 10 kV in order for these peaks to be excited. Under this voltage, the generation depth of x-ray photons approaches 1 μm, as evidenced by a Monte Carlo simulation and actual x-ray intensity measurement as discussed below. If a lower voltage is used to reduce the generation depth, their L peaks have to be used. But these L peaks actually are merged as one big hump simply because the atomic numbers of these three elements are relatively small and close together, and the EDS energy resolution is limited.

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