scholarly journals Small Signals’ Study of Thermal Induced Current in Nanoscale SOI Sensor

2017 ◽  
Vol 2017 ◽  
pp. 1-9 ◽  
Author(s):  
Yaakov Mandelbaum ◽  
Ilan Gadasi ◽  
Avraham Chelly ◽  
Zeev Zalevsky ◽  
Avi Karsenty
Keyword(s):  
Thermal Activation ◽  
Equivalent Circuit Model ◽  
Thermal Response ◽  
Large Signal ◽  
Current Time ◽  
Temperature Changes ◽  
Silicon Chips ◽  
Novel Device ◽  
Time Variations ◽  
Microelectronics Fabrication

A new nanoscale SOI dual-mode modulator is investigated as a function of optical and thermal activation modes. In order to accurately characterize the device specifications towards its future integration in microelectronics circuitry, current time variations are studied and compared for “large signal” constant temperature changes, as well as for “small signal” fluctuating temperature sources. An equivalent circuit model is presented to define the parameters which are assessed by numerical simulation. Assuring that the thermal response is fast enough, the device can be operated as a modulator via thermal stimulation or, on the other hand, can be used as thermal sensor/imager. We present here the design, simulation, and model of the next generation which seems capable of speeding up the processing capabilities. This novel device can serve as a building block towards the development of optical/thermal data processing while breaking through the way to all optic processors based on silicon chips that are fabricated via typical microelectronics fabrication process.

scholarly journals Study of the Photo- and Thermoactivation Mechanisms in Nanoscale SOI Modulator

2017 ◽  
Vol 2017 ◽  
pp. 1-11 ◽  
Author(s):  
Yaakov Mandelbaum ◽  
Ariel Zev ◽  
Avraham Chelly ◽  
Zeev Zalevsky ◽  
Avi Karsenty
Keyword(s):  
Thermal Response ◽  
Optoelectronic Device ◽  
Silicon On Insulator ◽  
Time Dependent ◽  
Silicon Chips ◽  
Novel Device ◽  
Different Temperatures ◽  
To Come ◽  
Microelectronics Fabrication ◽  
Silicon Based

A new nanoscale silicon-based modulator has been investigated at different temperatures. In addition to these two advantages, nanoscale dimensions (versus MEMS temperature sensors) and integrated silicon-based material (versus polymers), the third novelty of such optoelectronic device is that it can be activated as a Silicon-On-Insulator Photoactivated Modulator (SOIPAM) or as a Silicon-On-Insulator Thermoactivated Modulator (SOITAM). In this work, static and time dependent temperature effects on the current have been investigated. The aim of the time dependent temperature simulation was to set a temporal pulse and to check, for given dimensions, how much time would it take for the temperature profile and for the change in the electrons’ concentration to come back to the steady state. Assuring that the thermal response is fast enough, the device can be operated as a modulator via thermal stimulation or, on the other hand, can be used as thermal sensor/imager. We present here the design, simulation, and model of the second generation which seems capable of speeding up the processing capabilities. This novel device can serve as a building block towards the development of optical/thermal data processing while breaking through the way to all optic processors based on silicon chips that are fabricated via typical microelectronics fabrication process.

Linear thermoelasticity

2020 ◽  
pp. 257-285
Author(s):  
Lallit Anand ◽  
Sanjay Govindjee
Keyword(s):  
Linear Theory ◽  
Mechanical Response ◽  
Thermal Response ◽  
Engineering Applications ◽  
Temperature Changes ◽  
Weakly Coupled ◽  
Linear Thermoelasticity ◽  
Basic Equations ◽  
Fully Coupled ◽  
Coupled Theory

This chapter presents a theory for the coupled thermal and mechanical response of solids under circumstances in which the deformations are small and elastic, and the temperature changes from a reference temperature are small --- a framework known as the theory of linear thermoelasticity. The basic equations of the fully-coupled linear theory of anisotropic thermoelasticity are derived. These equations are then specialized for the case of isotropic materials. Finally, as a further specialization a weakly-coupled theory in which the temperature affects the mechanical response, but the deformation does not affect the thermal response, are discussed; this is a specialization which is of importance for many engineering applications, a few of which are illustrated in the examples.

LARGE SIGNAL EQUIVALENT CIRCUIT MODEL FOR PACKAGE ALGaN/GaN HEMT

2011 ◽  
Vol 20 ◽  
pp. 27-36 ◽  
Author(s):  
Lei Sang ◽  
Yuehang Xu ◽  
Yongbo Chen ◽  
Yunnchuan Guo ◽  
Rui-Min Xu
Keyword(s):  
Equivalent Circuit ◽  
Equivalent Circuit Model ◽  
Circuit Model ◽  
Large Signal ◽  
Gan Hemt

Machine learning-based broadband GaN HEMT behavioral model applied to class-J power amplifier design

2020 ◽  
pp. 1-9
Author(s):  
Jialin Cai ◽  
Justin King ◽  
Shichang Chen ◽  
Meilin Wu ◽  
Jiangtao Su ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Second Harmonic ◽  
Extraction Procedure ◽  
Equivalent Circuit Model ◽  
Behavioral Model ◽  
Support Vector ◽  
Large Signal ◽  
Proposed Model ◽  
Signal Input ◽  
Amplifier Design

Abstract A novel, broadband, nonlinear behavioral model, based on support vector regression (SVR) is presented in this paper. The proposed model, distinct from existing SVR-based models, incorporates frequency information into its formalism, allowing the model to perform accurate prediction across a wide frequency band. The basic theory of the proposed model, along with model implementation and the model extraction procedure for radio frequency transistor devices is provided. The model is verified through comparisons with the simulation of an equivalent circuit model, as well as experimental measurements of a 10 W Gallium Nitride (GaN) transistor. It is seen that the efficiency prediction throughout the Smith chart, for varying fundamental and second harmonic loads, across a wideband frequency range, show excellent fidelity to the measured results. Device dc self-biasing is also modelled to allow prediction of power amplifier (PA) efficiency, which is shown to be highly accurate when compared with corresponding measured data. Finally, a class-J PA is constructed and measured across the frequency with a large-signal input tone. The resulting measured and modelled values of key PA performance figures are shown to be in excellent agreement, indicating the model is suitable for broadband PA design.

scholarly journals Thermal response of hands to computer work: comparison of three assessment procedures

2019 ◽  
Vol 13 (1) ◽  
pp. 27-39
Author(s):  
Jan Horáček ◽  
Jan Novotný
Keyword(s):  
Thermal Response ◽  
Computer Work ◽  
Temperature Changes ◽  
Functional Changes ◽  
Non Invasive ◽  
Thermal Changes ◽  
Thermographic Camera ◽  
Assessment Procedures ◽  
Office Employees ◽  
Higher Sensitivity

Introduction: Unlike other imaging modalities thermography is absolutely non-invasive and suitable to assess functional changes. However in some fields, methodology for its use has not even been set yet. This work compares three different methods to study the dynamics of skin temperature changes in hands during computer work. Methods: A total of 306 measurements of 20 office employees and 6 non-office employees was performed with a thermographic camera during a work shift. The thermograms were subsequently evaluated and three methodologies - regions of interest, two of them newly proposed - were compared mathematically. Also, two more have been taken into consideration. Results: The results shown the same tendencies of thermal changes comparing our methodologies with the methodology used earlier in more than 80% (88 % in case of the first method, named H2 method and 85 % in case of the second one, named H5). However, in comparison to older procedure, our procedures shown higher sensitivity to temperature changes in more than 60% of cases (61 % in case of the first method and 68 % in case of the second one). We measured a variation range difference of 1.6 °C, and, with the second method, whole 2.1 °C compared to method used earlier. Conclusion: This work has determined a new procedure for measuring of dynamics of hands temperature changes, which is not only easier and faster to perform and evaluate, but it is also more capable of detecting temperature changes on hands.

Two Terminal Non-Volatile Memory Devices Using Diamond-Like Carbon and Silicon Nanostructures

2014 ◽  
Vol 95 ◽  
pp. 100-106 ◽  
Author(s):  
Sattam Alotaibi ◽  
Nare Gabrielyan ◽  
Shashi Paul
Keyword(s):  
Chemical Vapour ◽  
Memory Device ◽  
Silicon Nanostructures ◽  
Electronic Charge ◽  
Diamond Like Carbon ◽  
Memory Element ◽  
Current Time ◽  
Novel Device ◽  
Non Volatile Memory ◽  
Volatile Memory

This work illustrates a novel device for storing electronic charge and works as a non-volatile memory device. It is fabricated using an industrial technique and consists of silicon nanostructures and diamond like carbon (DLC) as a memory element and an ultra-thin barrier layer respectively. Both the silicon nanostructures and the DLC have been deposited by plasma enhanced chemical vapour deposition (PECVD) technique. The nanostructures are sandwiched between two DLC layers. To understand the ability of silicon nanostructures to store electronic charge current-voltage (I-V) and current-time (I-t) measurements were carried out. The memory effect is noted as the difference between the two electrical conductivity states (low ‘‘0’’ and high ‘‘1’’).

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