scholarly journals Modeling of Point Defects Annihilation in Multilayered Cu/Nb Composites under Irradiation

2016 ◽  
Vol 2016 ◽  
pp. 1-17 ◽  
Author(s):  
Sarah Fadda ◽  
Antonio Mario Locci ◽  
Francesco Delogu
Keyword(s):  
Point Defect ◽  
Point Defects ◽  
Surface Recombination ◽  
Multilayer Composite ◽  
Balance Equations ◽  
General Validity ◽  
Defect Diffusion ◽  
Temperature Radiation ◽  
General Tool

This work focuses on a mathematical modeling of the response to irradiation of a multilayer composite material. Nonstationary balance equations are utilized to account for production, recombination, transport, and annihilation, or removal, of vacancies and interstitials at interfaces. Although the model developed has general validity, Cu/Nb multilayers are used as case study. Layer thickness, temperature, radiation intensity, and surface recombination coefficients were varied systematically to investigate their effect on point defect annihilation processes at interfaces. It is shown that point defect annihilation at interfaces mostly depends on point defect diffusion. The ability of interfaces to remove point defects can be described by a simple map constructed using only two dimensionless parameters, which provides a general tool to estimate the efficiency of vacancy and interstitial removal in multilayer composite materials.

scholarly journals Role of Interface in Multilayered Composites under Irradiation: A Mathematical Investigation

2017 ◽  
Vol 2017 ◽  
pp. 1-16 ◽  
Author(s):  
Jaime Ortún-Palacios ◽  
Antonio Mario Locci ◽  
Sarah Fadda ◽  
Francesco Delogu ◽  
Santiago Cuesta-López
Keyword(s):  
Point Defect ◽  
Point Defects ◽  
Diffusion Rate ◽  
Temporal Evolution ◽  
Vacancy Concentration ◽  
Balance Equations ◽  
Layer System ◽  
Mathematical Investigation ◽  
Multilayered Composites

A continuum model of point-defects evolution during irradiation of a multilayer composite material is presented in this work. Nonstationary balance equations are used to describe production, recombination, transport, and annihilation, or removal, of vacancies and interstitials in a β-α-β three-layer system (α = Cu and β = Nb, V, or Ni). In addition, transport and trapping of point-defects at interfaces are taken into account. Numerical investigation on similarities and differences between Cu/Nb, Cu/V, and Cu/Ni systems is also performed. A general comparison of model results reveals that average vacancy concentration is typically higher than SIA one in both layers for all the systems investigated. This is a consequence of the higher diffusion rate of SIAs with respect to vacancies. Stationary state is reached without saturating interface point-defect traps by all systems but Cu/Ni for the case of SIAs. It can be also seen that Cu/Nb and Cu/V systems have a very similar behavior regarding point-defect temporal evolution in copper (layer α), while higher SIA concentration at steady state is shown therein by the Cu/Ni structure. Moreover, Cu/V system displays the lower stationary vacancy concentration in layer β.

Detection of a point defect in a silicon single crystal by high-resolution TEM

1995 ◽  
Vol 53 ◽  
pp. 466-467
Author(s):  
M. Awaji
Keyword(s):  
High Resolution ◽  
Single Crystal ◽  
Point Defect ◽  
Point Defects ◽  
Noise Level ◽  
Dark Field ◽  
Silicon Single Crystal ◽  
High Resolution Image ◽  
Dark Field Imaging ◽  
Field Imaging

It is necessary to improve the resolution, brightness and signal-to-noise ratio(s/n) for the detection and identification of point defects in crystals. In order to observe point defects, multi-beam dark-field imaging is one of the useful methods. Though this method can improve resolution and brightness compared with dark-field imaging by diffuse scattering, the problem of s/n still exists. In order to improve the exposure time due to the low intensity of the dark-field image and the low resolution, we discuss in this paper the bright-field high-resolution image and the corresponding subtracted image with reference to a changing noise level, and examine the possibility for in-situ observation, identification and detection of the movement of a point defect produced in the early stage of damage process by high energy electron bombardment.The high-resolution image contrast of a silicon single crystal in the [10] orientation containing a triple divacancy cluster is calculated using the Cowley-Moodie dynamical theory and for a changing gaussian noise level. This divacancy model was deduced from experimental results obtained by electron spin resonance. The calculation condition was for the lMeV Berkeley ARM operated at 800KeV.

Potential impacts of slum urbanisation on channel bank storage in the Bang Pakong River, Thailand

2012 ◽  
Vol 7 (4) ◽  
Author(s):  
K. Harriden
Keyword(s):  
Water Quality ◽  
Balance Equations ◽  
Physical Processes ◽  
Social Phenomena ◽  
Urban Settlements ◽  
Recharge Rates ◽  
Water Quality Deterioration ◽  
Informal Urban Settlements ◽  
Storage Processes

Generally regarded as social phenomena, this paper regards slum urbanisation as an environmental actor. Specifically, how slum developments modify hydrogeomorphological processes motivates this research. Using the Bang Pakong River, eastern Thailand, as a case study, a literature review was conducted. The literature reviewed indicated changes in physical processes such as channel bank stability, water quality, flow regimes and the hydrological balance equations can occur with slum development. Given the importance of channel banks as the physical basis of many slum sites, this paper focuses on the possible changes to channel bank storage in the Bang Pakong River following slum urbanisation. The research highlights possible changes to channel bank storage processes, notably decreased storage recharge rates; increased anthropogenic extraction; and probable water quality deterioration. Deeper scientific understanding of how river processes are affected by specific forms of urban development can contribute to better management of both informal urban settlements and rivers.

Steady-state point-defect diffusion profiles in solids during irradiation

1974 ◽  
Vol 23 (1) ◽  
pp. 53-59 ◽  
Author(s):  
Nghi Q. Lam ◽  
Steven J. Rothman ◽  
Rudolf Sizmanns
Keyword(s):  
Steady State ◽  
Point Defect ◽  
Defect Diffusion ◽  
State Point ◽  
Diffusion Profiles

Effect of Energy and Dose on Transient-Enhanced Diffusion and Defect Microstructure in Low Energy High Dose As+ Implanted Si

1996 ◽  
Vol 438 ◽  
Author(s):  
V. Krishnamoorthy ◽  
D. Venables ◽  
K. Moeller ◽  
K. S. Jones ◽  
B. Freer
Keyword(s):  
Point Defects ◽  
Surface Recombination ◽  
High Dose ◽  
Enhanced Diffusion ◽  
Projected Range ◽  
Diffusion Enhancement ◽  
Defect Microstructures ◽  
Dose Dependent ◽  
Higher Doses ◽  
Defect Microstructure

Abstract(001) CZ silicon wafers were implanted with arsenic (As+) at energies of 10–50keV to doses of 2×1014 to 5×1015/cm2. All implants were amorphizing in nature. The samples were annealed at 700°C for 16hrs. The resultant defect microstructures were analyzed by XTEM and PTEM and the As profiles were analyzed by SIMS. The As profiles showed significantly enhanced diffusion in all of the annealed specimens. The diffusion enhancement was both energy and dose dependent. The lowest dose implant/annealed samples did not show As clustering which translated to a lack of defects at the projected range. At higher doses, however, projected range defects were clearly observed, presumably due to interstitials generated during As clustering. The extent of enhancement in diffusion and its relation to the defect microstructure is explained by a combination of factors including surface recombination of point defects, As precipitation, As clustering and end of range damage.

scholarly journals Reactivity of fluorographene is triggered by point defects: beyond the perfect 2D world

Nanoscale ◽  
2018 ◽  
Vol 10 (10) ◽  
pp. 4696-4707 ◽  
Author(s):  
Miroslav Medveď ◽  
Giorgio Zoppellaro ◽  
Juri Ugolotti ◽  
Dagmar Matochová ◽  
Petr Lazar ◽  
...  
Keyword(s):  
Point Defect ◽  
Point Defects

Understanding the links between nucleophilic/reductive strength of the environment, formation of radicals and point defect characteristics is crucial for achieving control over the functionalization of fluorographene.

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