scholarly journals Fabrication of Si/SiO2 Superlattice Microwire Array Solar Cells Using Microsphere Lithography

2016 ◽  
Vol 2016 ◽  
pp. 1-8 ◽  
Author(s):  
Shigeru Yamada ◽  
Shinsuke Miyajima ◽  
Makoto Konagai
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Open Circuit Voltage ◽  
Light Trapping ◽  
Photovoltaic Effect ◽  
Open Circuit ◽  
Limiting Factors ◽  
Solar Cell Performance ◽  
Cell Structures ◽  
Silicon Silicon

A fabrication process for silicon/silicon dioxide (Si/SiO2) superlattice microwire array solar cells was developed. The Si/SiO2 superlattice microwire array was fabricated using a microsphere lithography process with polystyrene particles. The solar cell shows a photovoltaic effect and an open-circuit voltage of 128 mV was obtained. The limiting factors of the solar cell performance were investigated from the careful observations of the solar cell structures. We also investigated the influence of the microwire array structure on light trapping in the solar cells.

Open-Circuit Voltage Decay in CdTe/CdS Solar Cells

2005 ◽  
Vol 865 ◽  
Author(s):  
Kent Price ◽  
Kevin Cooper ◽  
Chris Lacy
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Function Generator ◽  
Solar Cell Performance ◽  
Digital Oscilloscope ◽  
Relative Contribution ◽  
Voltage Decay ◽  
Decay Times

AbstractOpen-Circuit Voltage Decay (OCVD) is a common technique used to characterize numerous semiconductor devices. However, to the knowledge of the authors, the technique has not previously been applied to CdTe-based solar cells. We use a simple setup consisting of a function generator, rectifying diode, and digital oscilloscope to measure the dark open circuit voltage decay as a function of time across a CdTe solar cell. We find the decay to be described by the equation v(t) = v0 + A1exp (–t/τ1) + A2exp (–t/τ2) where v is the voltage, t is time, τ1 and τ2 are characteristic decay times, and A1, A2 and v0 are constants. The two characteristic decay times are on the order of 10 μs and 500 μs. The relative contribution of the two decay times depends on the magnitude of the initial applied voltage pulse. We will describe preliminary results on the correlation between the OCVD and solar cell performance, including the effects of light-soaking on OCVD behavior.

scholarly journals Numerical Simulation Analysis of Ag Crystallite Effects on Interface of Front Metal and Silicon in the PERC Solar Cell

Energies ◽  
2021 ◽  
Vol 14 (3) ◽  
pp. 592
Author(s):  
Myeong Sang Jeong ◽  
Yonghwan Lee ◽  
Ka-Hyun Kim ◽  
Sungjin Choi ◽  
Min Gu Kang ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Surface Recombination ◽  
Open Circuit ◽  
Surface Recombination Velocity ◽  
Metal Interface ◽  
Ag Crystallites ◽  
Recombination Velocity

In the fabrication of crystalline silicon solar cells, the contact properties between the front metal electrode and silicon are one of the most important parameters for achieving high-efficiency, as it is an integral element in the formation of solar cell electrodes. This entails an increase in the surface recombination velocity and a drop in the open-circuit voltage of the solar cell; hence, controlling the recombination velocity at the metal-silicon interface becomes a critical factor in the process. In this study, the distribution of Ag crystallites formed on the silicon-metal interface, the surface recombination velocity in the silicon-metal interface and the resulting changes in the performance of the Passivated Emitter and Rear Contact (PERC) solar cells were analyzed by controlling the firing temperature. The Ag crystallite distribution gradually increased corresponding to a firing temperature increase from 850 ∘C to 950 ∘C. The surface recombination velocity at the silicon-metal interface increased from 353 to 599 cm/s and the open-circuit voltage of the PERC solar cell decreased from 659.7 to 647 mV. Technology Computer-Aided Design (TCAD) simulation was used for detailed analysis on the effect of the surface recombination velocity at the silicon-metal interface on the PERC solar cell performance. Simulations showed that the increase in the distribution of Ag crystallites and surface recombination velocity at the silicon-metal interface played an important role in the decrease of open-circuit voltage of the PERC solar cell at temperatures of 850–900 ∘C, whereas the damage caused by the emitter over fire was determined as the main cause of the voltage drop at 950 ∘C. These results are expected to serve as a steppingstone for further research on improvement in the silicon-metal interface properties of silicon-based solar cells and investigation on high-efficiency solar cells.

scholarly journals Junction Configuration Effects on the Photovoltaic Parameters of a-Si/CZTS Solar Cells

2022 ◽  
Author(s):  
H. Bitam ◽  
B. Hadjoudja ◽  
Beddiaf Zaidi ◽  
C. Shakher ◽  
S. Gagui ◽  
...  
Keyword(s):  
Renewable Energy ◽  
Solar Cells ◽  
Solar Cell ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Photovoltaic Devices ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Reported Study ◽  
Stated Problem

Due to increased energy intensive human activities resulting accelerated demand for electric power coupled with occurrence of natural disasters with increased frequency, intensity, and duration, it becomes essential to explore and advance renewable energy technology for sustainability of the society. Addressing the stated problem and providing a radical solution has been attempted in this study. To harvest the renewable energy, among variety of solar cells reported, a composite a-Si/CZTS photovoltaic devices has not yet been investigated. The calculated parameters for solar cell based on the new array of layers consisting of a-Si/CZTS are reported in this study. The variation of i) solar cell efficiency as a function of CZTS layer thickness, temperature, acceptor, and donor defect concentration; ii) variation of the open circuit current density as a function of temperature, open circuit voltage; iii) variation of open circuit voltage as a function of the thickness of the CZTS layer has been determined. There has been no reported study on a-Si/CZTS configuration-based solar cell, analysis of the parameters, and study to address the challenges imped efficiency of the photovoltaic device and the same has been discussed in this work. The value of the SnO2/a-Si/CZTS solar cells obtained from the simulation is 23.9 %.

Modeling of Abnormal Hysteresis in CsPbBr3 based Perovskite Solar Cells

2021 ◽  
Vol 34 (1) ◽  
pp. 01-08
Author(s):  
B GopalKrishna ◽  
Sanjay Tiwari
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Simulation Study ◽  
Open Circuit Voltage ◽  
Layer Structure ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Perovskite Solar Cell ◽  
Open Circuit ◽  
Perovskite Layer

Perovskite solar cells are emerging photovoltaic devices with PCE of above 25%. Perovskite are suitable light absorber materials in solar cells with excellent properties like appropriate band gap energy, long carrier lifetime and diffusion length, and high extinction coefficient. Simulation study is an important technique to understand working mechanisms of perovskites solar cells. The study would help develop efficient, stable PSCs experimentally. In this study, modeling of perovskite solar cell was carried out through Setfos software. The optimization of different parameters of layer structure of solar cell would help to achieve maximum light absorption in the perovskite layer of solar cell. Simulation study is based drift-diffusion model to study the different parameters of perovskite solar cell. Hysteresis is one of the factors in the perovskite solar cell which may influence the device performance. The measurement of abnormal hysteresis can be done by current-voltage curve during backward scan during simulation study. In backward scan, the measurement starts from biasing voltage higher than open circuit voltage and sweep to voltage below zero. The numerical simulation used to study the various parameters like open circuit voltage, short circuit current, fill factor, power conversion efficiency and hysteresis. The simulation results would help to understand the photophysics of solar cell physics which would help to fabricate highly efficient and stable perovskite solar cells experimentally.

scholarly journals Photovoltaic Cell: Optimum Photon Utilisation

2016 ◽  
Vol 3 ◽  
pp. 64-85
Author(s):  
Liam Caruana ◽  
Thomas Nommensen ◽  
Toan Dinh ◽  
Dennis Tran ◽  
Robert McCormick
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Entropy Generation ◽  
Light Trapping ◽  
Photovoltaic Cell ◽  
High Energy ◽  
Open Circuit ◽  
Light Spectrum ◽  
Energy Incident ◽  
Global Energy Consumption

In the 21st century, global energy consumption has increased exponentially and hence, sustainable energy sources are essential to accommodate for this. Advancements within photovoltaics, in regards to light trapping, has demonstrated to be a promising field of dramatically improving the efficiency of solar cells. This improvement is done by using different nanostructures, which enables solar cells to use the light spectrum emitted more efficiently. The purpose of this meta study is to investigate irreversible entropic losses related to light trapping. In this respect, the observation is aimed at how nanostructures on a silicon substrate captures high energy incident photons. Furthermore, different types of nanostructures are then investigated and compared, using the étendue ratio during light trapping. It is predicted that étendue mismatching is a parasitic entropy generation variable, and that the matching has an effect on the open circuit voltage of the solar cell. Although solar cells do have their limiting efficiencies, according to the Shockley-Queisser theory and Yablonovitch limit, with careful engineering and manufacturing practices, these irreversible entropic losses could be minimized. Further research in energy losses, due to entropy generation, may guide nanostructures and photonics in exceeding past these limits.Keywords: Photovoltaic cell; Shockley-Queisser; Solar cell nanostructures; Solar cell intrinsic and extrinsic losses; entropy; étendue; light trapping; Shockley Queisser; Geometry; Meta-study

The Study of Optical and Electrical Properties of a-SiC:H for Multi-junction Si Thin Film Solar Cell

2010 ◽  
Vol 1245 ◽  
Author(s):  
Jenny H. Shim ◽  
W.K. Yoon ◽  
S.T. Hwang ◽  
S.W. Ahn ◽  
H.M. Lee
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
High Efficiency ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Wide Bandgap ◽  
Open Circuit ◽  
Deposition Condition ◽  
Wide Bandgap Material ◽  
Pressure Regime

AbstractStudies have shown that wide bandgap material is required for high efficiency multi-junction solar cell applications. Here, we address proper deposition condition for high quality a-SiC:H films. In high power high pressure regime, we observed that the defect density get much lowered to the similar defect level of a-Si:H film with high H2 dilution. Single junction solar cells fabricated with the optimized condition show high open circuit voltage and low LID effect. The degradation after the LID test was only 13 % reduction of the efficiency indicating that a-SiC:H could be promising material for multi-junction solar cells.

Reduced open-circuit voltage loss for highly efficient low-bandgap perovskite solar cells via suppression of silver diffusion

2019 ◽  
Vol 7 (29) ◽  
pp. 17324-17333 ◽  
Author(s):  
Meiyue Liu ◽  
Ziming Chen ◽  
Yongchao Yang ◽  
Hin-Lap Yip ◽  
Yong Cao
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Energy Level ◽  
Open Circuit Voltage ◽  
Perovskite Solar Cells ◽  
Perovskite Solar Cell ◽  
Open Circuit ◽  
Perovskite Layer ◽  
Low Bandgap ◽  
Voltage Loss

Ag diffused across the PCBM layer increased the trap density and down-shifted the energy level of the perovskite layer. Fortunately, PCBM/ZnO layer efficiently suppressed the Ag diffusion, resulting in a perovskite solar cell with PCE of 18.1%.

Deposition of P-Type Nanocrystalline Silicon Using High Pressure in a VHF-PECVD Single Chamber System

2011 ◽  
Vol 1321 ◽  
Author(s):  
Xiaodan Zhang ◽  
Guanghong Wang ◽  
Xinxia Zheng ◽  
Shengzhi Xu ◽  
Changchun Wei ◽  
...  
Keyword(s):  
High Pressure ◽  
Solar Cells ◽  
Solar Cell ◽  
Conversion Efficiency ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Nanocrystalline Silicon ◽  
Open Circuit ◽  
Single Chamber ◽  
P Type

ABSTRACTIn this article, we present a study of boron-doped hydrogenated nanocrystalline silicon (nc-Si: H) films by very high frequency-plasma enhanced chemical vapor deposition (VHF-PECVD) using high deposition pressure. Electrical, structural and optical properties of the films were investigated. Dark conductivity as high as 2.75S/cm of p-type nc-Si: H prepared at 2.5Torr pressure has been achieved at a deposition rate of 1.75Å/s for 25nm thin film. By controlling boron and phosphorus contamination, single junction nc-Si: H solar cells incorporated p-layers prepared under high pressure and low pressure, respectively, were deposited. It has been proven that nanocrystalline silicon solar cells with incorporation of p layer prepared at high pressure has resulted in enhanced open circuit voltage, short circuit current density and subsequently high conversion efficiency. Through the optimization of the bottom solar cell and application of ZnO/Al back reflector, 10.59% initial conversion efficiency of micromorph tandem solar cell (1.027cm2) with an open circuit voltage of 1.3864V, has been fabricated, where the bottom solar cell using a high pressure p layer was deposited in a single chamber.

scholarly journals Experimental demonstration of enhanced photon recycling in angle-restricted GaAs solar cells

2014 ◽  
Vol 7 (6) ◽  
pp. 1907-1912 ◽  
Author(s):  
Emily D. Kosten ◽  
Brendan M. Kayes ◽  
Harry A. Atwater
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Open Circuit Voltage ◽  
Open Circuit ◽  
Experimental Demonstration ◽  
High Quality ◽  
Photon Recycling

Enhanced open-circuit voltage demonstrated in a high quality GaAs solar cell by limiting the angles of emitted light from the cell.

Protocrystalline Si:H p-type Layers for Maximization of the Open Circuit Voltage in a-Si:H n-i-p Solar Cells

2002 ◽  
Vol 715 ◽  
Author(s):  
R. J. Koval ◽  
Chi Chen ◽  
G. M. Ferreira ◽  
A. S. Ferlauto ◽  
J. M. Pearce ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Gas Flow ◽  
Open Circuit Voltage ◽  
Film Growth ◽  
Chemical Vapor ◽  
Open Circuit ◽  
Single Step ◽  
Rf Plasma ◽  
Growth Regime

AbstractWe have revisited the issue of p-layer optimization for amorphous silicon (a-Si:H) solar cells, correlating spectroscopic ellipsometry (SE) measurements of the p-layer in the device configuration with light current-voltage (J-V) characteristics of the completed solar cell. Working with p-layer gas mixtures of H2/SiH4/BF3 in rf plasma-enhanced chemical vapor deposition (PECVD), we have found that the maximum open circuit voltage (Voc) for n-i-p solar cells is obtained using p-layers prepared with the maximum possible hydrogen-dilution gas-flow ratio R=[H2]/[SiH4], but without crossing the thickness-dependent transition from the a-Si:H growth regime into the mixed-phase amorphous + microcrystalline [(a+μc)-Si:H] regime for the ∼200 Å p-layers. As a result, optimum single-step p-layers are obtained under conditions similar to those applied for optimum i-layers, i.e., by operating in the so-called “protocrystalline” Si:H film growth regime. The remarkable dependence of the p-layer phase (amorphous vs. microcrystalline) and n-i-p solar cell Voc on the nature of the underlying i-layer surface also supports this conclusion.

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