scholarly journals High Field Linear Magnetoresistance Sensors with Perpendicular Anisotropy L10-FePt Reference Layer

2016 ◽  
Vol 2016 ◽  
pp. 1-6
Author(s):  
X. Liu ◽  
Z. L. Song ◽  
R. Wang ◽  
Z. Y. Quan
Keyword(s):  
High Field ◽  
Film Plane ◽  
Magnetic Sensors ◽  
Perpendicular Anisotropy ◽  
Substrate Heating ◽  
Ferromagnetic Layers ◽  
Out Of Plane ◽  
Linear Magnetoresistance ◽  
Reference Layer

High field linear magnetoresistance is an important feature for magnetic sensors applied in magnetic levitating train and high field positioning measurements. Here, we investigate linear magnetoresistance in Pt/FePt/ZnO/Fe/Pt multilayer magnetic sensor, where FePt and Fe ferromagnetic layers exhibit out-of-plane and in-plane magnetic anisotropy, respectively. Perpendicular anisotropy L10-FePt reference layer with large coercivity and high squareness ratio was obtained by in situ substrate heating. Linear magnetoresistance is observed in this sensor in a large range between +5 kOe and −5 kOe with the current parallel to the film plane. This L10-FePt based sensor is significant for the expansion of linear range and the simplification of preparation for future high field magnetic sensors.

scholarly journals Nanostructured Manganite Films Grown by Pulsed Injection MOCVD: Tuning Low- and High-Field Magnetoresistive Properties for Sensors Applications

Sensors ◽  
2022 ◽  
Vol 22 (2) ◽  
pp. 605
Author(s):  
Voitech Stankevic ◽  
Nerija Zurauskiene ◽  
Skirmantas Kersulis ◽  
Valentina Plausinaitiene ◽  
Rasuole Lukose ◽  
...  
Keyword(s):  
High Field ◽  
Colossal Magnetoresistance ◽  
Film Plane ◽  
Magnetic Sensors ◽  
Sensor Applications ◽  
Operation Temperature ◽  
Low Field ◽  
Wide Range ◽  
Pulsed Injection ◽  
Crystal Quartz

The results of colossal magnetoresistance (CMR) properties of La0.83Sr0.17Mn1.21O3 (LSMO) films grown by pulsed injection MOCVD technique onto various substrates are presented. The films with thicknesses of 360 nm and 60 nm grown on AT-cut single crystal quartz, polycrystalline Al2O3, and amorphous Si/SiO2 substrates were nanostructured with column-shaped crystallites spread perpendicular to the film plane. It was found that morphology, microstructure, and magnetoresistive properties of the films strongly depend on the substrate used. The low-field MR at low temperatures (25 K) showed twice higher values (−31% at 0.7 T) for LSMO/quartz in comparison to films grown on the other substrates (−15%). This value is high in comparison to results published in literature for manganite films prepared without additional insulating oxides. The high-field MR measured up to 20 T at 80 K was also the highest for LSMO/quartz films (−56%) and demonstrated the highest sensitivity S = 0.28 V/T at B = 0.25 T (voltage supply 2.5 V), which is promising for magnetic sensor applications. It was demonstrated that Mn excess Mn/(La + Sr) = 1.21 increases the metal-insulator transition temperature of the films up to 285 K, allowing the increase in the operation temperature of magnetic sensors up to 363 K. These results allow us to fabricate CMR sensors with predetermined parameters in a wide range of magnetic fields and temperatures.

scholarly journals Thin film bi-epitaxy and transition characteristics of TiO2/TiN buffered VO2 on Si(100) substrates

MRS Advances ◽  
2016 ◽  
Vol 1 (37) ◽  
pp. 2635-2640 ◽  
Author(s):  
Adele Moatti ◽  
Reza Bayati ◽  
Srinivasa Rao Singamaneni ◽  
Jagdish Narayan
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Frequency Factor ◽  
Misfit Strain ◽  
Buffer Layers ◽  
Intrinsic Defects ◽  
Domain Matching Epitaxy ◽  
Out Of Plane

ABSTRACTBi-epitaxial VO2 thin films with [011] out-of-plane orientation were integrated with Si(100) substrates through TiO2/TiN buffer layers. At the first step, TiN is grown epitaxially on Si(100), where a cube-on-cube epitaxy is achieved. Then, TiN was oxidized in-situ ending up having epitaxial r-TiO2. Finally, VO2 was deposited on top of TiO2. The alignment across the interfaces was stablished as VO2(011)║TiO2(110)║TiN(100)║Si(100) and VO2(110) /VO2(010)║TiO2(011)║TiN(112)║Si(112). The inter-planar spacing of VO2(010) and TiO2(011) equal to 2.26 and 2.50 Å, respectively. This results in a 9.78% tensile misfit strain in VO2(010) lattice which relaxes through 9/10 alteration domains with a frequency factor of 0.5, according to the domain matching epitaxy paradigm. Also, the inter-planar spacing of VO2(011) and TiO2(011) equals to 3.19 and 2.50 Å, respectively. This results in a 27.6% compressive misfit strain in VO2(011) lattice which relaxes through 3/4 alteration domains with a frequency factor of 0.57. We studied semiconductor to metal transition characteristics of VO2/TiO2/TiN/Si heterostructures and established a correlation between intrinsic defects and magnetic properties.

Structural Properties Of Co/Re Superlattices

1991 ◽  
Vol 238 ◽  
Author(s):  
Y. Huai ◽  
R. W. Cochrane ◽  
Y. Shi ◽  
H. E. Fischer ◽  
M. Sutton
Keyword(s):  
Structural Disorder ◽  
Multilayer Films ◽  
Film Plane ◽  
X Ray Diffraction ◽  
X Ray ◽  
Bilayer Films ◽  
Out Of Plane ◽  
Reflectivity Data ◽  
Sharp Interfaces ◽  
Good Agreement

ABSTRACTThe structures of equal-thickness Co/Re multilayer films and several Co/Re bilayer films have been investigated by X-ray diffraction at low and high angles. Analysis of low-angle reflectivity data from bilayer films indicates that interfacial intermixing is limited to three monolayers and that the two interfacial configurations are different. The high-angle X-ray diffraction data show that multilayer films have coherent interfaces and a highly textured structure with hep [002] orientations normal to the film plane for periods 21 Å ≤ Λ ≤220 Å. Detailed structures have been determined by fitting the X-ray spectra to calculated ones using a trapezoidal model. The results indicate that samples with 42 Å≤ Λ ≤220 Å have relatively sharp interfaces, in good agreement with the bilayer results. In addition, an out-of-plane expansion of the Co (002) layer is observed in samples with large Λ and results from structural disorder leading to a reduced atomic density. For Λ <21 Å the interfaces arise from the rougher surfaces of the deposited layers.

scholarly journals 3C-SiC Nanowires In-Situ Modified Carbon/Carbon Composites and Their Effect on Mechanical and Thermal Properties

Nanomaterials ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 894 ◽  
Author(s):  
Hongjiao Lin ◽  
Hejun Li ◽  
Qingliang Shen ◽  
Xiaohong Shi ◽  
Tao Feng ◽  
...  
Keyword(s):  
Shear Strength ◽  
Thermal Properties ◽  
Sol Gel ◽  
Interlaminar Shear Strength ◽  
Mechanical And Thermal Properties ◽  
Initial Oxidation ◽  
Sic Nanowires ◽  
Out Of Plane ◽  
Interlaminar Shear

An in-situ, catalyst-free method for synthesizing 3C-SiC ceramic nanowires (SiCNWs) inside carbon–carbon (C/C) composites was successfully achieved. Obtained samples in different stages were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and Raman scattering spectroscopy. Results demonstrated that the combination of sol-gel impregnation and carbothermal reduction was an efficient method for in-situ SiCNW synthesis, inside C/C composites. Thermal properties and mechanical behaviors—including out-of-plane and in-plane compressive strengths, as well as interlaminar shear strength (ILLS) of SiCNW modified C/C composites—were investigated. By introducing SiCNWs, the initial oxidation temperature of C/C was increased remarkably. Meanwhile, out-of-plane and in-plane compressive strengths, as well as interlaminar shear strength (ILLS) of C/C composites were increased by 249.3%, 109.2%, and 190.0%, respectively. This significant improvement resulted from simultaneous reinforcement between the fiber/matrix (F/M) and matrix/matrix (M/M) interfaces, based on analysis of the fracture mechanism.

scholarly journals Magnetization Dynamics in a Perpendicular Anisotropy Free Layer under a Spin Torque Effect with Crossed Polarization

2020 ◽  
Vol 25 (1) ◽  
pp. 54
Author(s):  
Nafeesa Rahman ◽  
Rachid Sbiaa
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Film Plane ◽  
Spin Torque ◽  
Spin Angular Momentum ◽  
Perpendicular Anisotropy ◽  
Free Layer ◽  
Magnetization Dynamics ◽  
Magnetization Direction ◽  
Spin Polarized

The transfer of spin angular momentum from a spin polarized current provides an efficient way of reversing the magnetization direction of the free layer of the magnetic tunnel junction (MTJ), and while faster reversal will reduce the switching energy, this in turn will lead to low power consumption. In this work, we propose a design where a spin torque oscillator (STO) is integrated with a conventional magnetic tunnel junction (MTJ) which will assist in the ultrafast reversal of the magnetization of the free layer of the MTJ. The structure formed (MTJ stacked with STO), will have the free layer of the MTJ sandwiched between two spin polarizer layers, one with a fixed magnetization direction perpendicular to film plane (main static polarizer) and the other with an oscillatory magnetization (dynamic polarizer). The static polarizer is the fixed layer of the MTJ itself and the dynamic polarizer is the free layer of the STO.

scholarly journals Effect of Sintering Temperature on Metal-Insulator Phase Transition in La1-xCaxMnO3 Perovskites

2020 ◽  
Vol 2 (1) ◽  
pp. 37-42
Author(s):  
Arunachalam M ◽  
Thamilmaran P ◽  
Sakthipandi K
Keyword(s):  
Phase Transition ◽  
Bulk Modulus ◽  
Sintering Temperature ◽  
Magnetic Sensors ◽  
Temperature Dependent ◽  
Metal Insulator ◽  
Wide Range ◽  
Different Temperatures ◽  
Insulator Phase Transition

Lanthanum calcium based perovskites are found to be advantageous for the possible applications in magnetic sensors/reading heads, cathodes in solid oxide fuel cells, and frequency switching devices. In the present investigation La0.3Ca0.7MnO3 perovskites were synthesised through solid state reaction and sintered at four different temperatures such as 900, 1000, 1100 and 1200˚ C. X-ray powder diffraction pattern confirms that the prepared La0.3Ca0.7MnO3 perovskites have orthorhombic structure with Pnma space group. Ultrasonic in-situ measurements have been carried out on the La0.3Ca0.7MnO3 perovskites over wide range of temperature and elastic constants such as bulk modulus of the prepared La0.3Ca0.7MnO3 perovskites was obtained as function of temperature. The temperature-dependent bulk modulus has shown an interesting anomaly at the metal-insulator phase transition. The metal insulator transition temperature derived from temperature-dependent bulk modulus increases from temperature 352˚ C to 367˚ C with the increase of sintering temperature from 900 to 1200˚ C.

scholarly journals The Impact of High Pressure, Doping and the Size of Crystalline Boron Grains on Creation of High-Field Pinning Centers in In Situ MgB2 Wires

2018 ◽  
Vol 32 (4) ◽  
pp. 845-853 ◽  
Author(s):  
D. Majchrzak ◽  
A. Zaleski ◽  
A. Morawski ◽  
M. Małecka ◽  
M. Rindfleisch ◽  
...  
Keyword(s):  
High Pressure ◽  
High Field ◽  
Mgb2 Wires ◽  
Pinning Centers ◽  
Crystalline Boron ◽  
The Impact
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