scholarly journals Effect ofIn SituThermal Annealing on Structural, Optical, and Electrical Properties of CdS/CdTe Thin Film Solar Cells Fabricated by Pulsed Laser Deposition

2016 ◽  
Vol 2016 ◽  
pp. 1-8 ◽  
Author(s):  
Alaa Ayad Al-mebir ◽  
Paul Harrison ◽  
Ali Kadhim ◽  
Guanggen Zeng ◽  
Judy Wu

Anin situthermal annealing process (iTAP) has been introduced before the commonex situcadmium chloride (CdCl2) annealing to improve crystal quality and morphology of the CdTe thin films after pulsed laser deposition of CdS/CdTe heterostructures. A strong correlation between the two annealing processes was observed, leading to a profound effect on the performance of CdS/CdTe thin film solar cells. Atomic force microscopy and Raman spectroscopy show that the iTAP in the optimal processing window produces considerable CdTe grain growth and improves the CdTe crystallinity, which results in significantly improved optoelectronic properties and quantum efficiency of the CdS/CdTe solar cells. A power conversion efficiency of up to 7.0% has been obtained on thin film CdS/CdTe solar cells of absorber thickness as small as 0.75 μm processed with the optimal iTAP at 450°C for 10–20 min. This result illustrates the importance of controlling microstructures of CdTe thin films and iTAP provides a viable approach to achieve such a control.

Solar Energy ◽  
2021 ◽  
Vol 213 ◽  
pp. 118-125
Author(s):  
Dan Wang ◽  
Yajun Yang ◽  
Tianzhen Guo ◽  
Xiaoyong Xiong ◽  
Yue Xie ◽  
...  

2012 ◽  
Vol 101 (15) ◽  
pp. 153903 ◽  
Author(s):  
Bing Li ◽  
Jianwei Liu ◽  
Guowei Xu ◽  
Rongtao Lu ◽  
Lianghuan Feng ◽  
...  

2009 ◽  
Vol 1165 ◽  
Author(s):  
Sergiu A Vatavu ◽  
Hehong Zhao ◽  
Iuliana M Caraman ◽  
Petru A Gasin ◽  
Don L Morel ◽  
...  

AbstractTechnology variations involving Cu and Cl impurities are among the major performance influencing factors for CdS/CdTe thin film solar cells. CuCl and CdCl2 influence on the energetic diagram of impurity levels with respect to variation of deposition parameters has been investigated. A comparative analysis has been carried out by using low temperature photoluminescence (PL) studies (17-98K) of CdTe thin films in the device configuration (from CdS/CdTe inteface and CdTe sides). To study the effect of CuCl influence, as-deposited, annealed heterojunctions, with CuCl treatment of CdS have been investigated.


2015 ◽  
Vol 138 ◽  
pp. 1-8 ◽  
Author(s):  
S.A. Vanalakar ◽  
G.L. Agawane ◽  
A.S. Kamble ◽  
C.W. Hong ◽  
P.S. Patil ◽  
...  

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