scholarly journals Influence of Anodization Time on Photovoltaic Performance of DSSCs Based on TiO2 Nanotube Array

2016 ◽  
Vol 2016 ◽  
pp. 1-8 ◽  
Author(s):  
Jinghua Hu ◽  
Shiwu Hu ◽  
Yingping Yang ◽  
Shengqiang Tong ◽  
Jiejie Cheng ◽  
...  
Keyword(s):  
Double Layer ◽  
High Performance ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Photoelectric Conversion ◽  
Nanotube Array ◽  
Anodization Time

Highly ordered TiO2 nanotube arrays (TNT arrays) were fabricated by two-step anodization process. In order to further improve the performance of DSSCs, TNT arrays were optimized by changing the anodization conditions to meet the requirements of high-performance photoanode. The photoelectric conversion properties of DSSCs based on P25/TNT arrays double-layer film with different anodization time were investigated and compared. The results show that the conversion efficiency of 4.20% was achieved in double-layer photoanode at 18 h, with an open-circuit voltage (Voc) of 0.65 V and short-circuit current density (Jsc) of 9.98 mA cm−2.

Enhancement of the performance of CdS/CdTe heterojunction solar cell using TiO2/ZnO bi-layer ARC and V2O5 BSF layers: A simulation approach

2020 ◽  
Vol 92 (2) ◽  
pp. 20901
Author(s):  
Abdul Kuddus ◽  
Md. Ferdous Rahman ◽  
Jaker Hossain ◽  
Abu Bakar Md. Ismail
Keyword(s):  
Solar Cell ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Heterojunction Solar Cell ◽  
Back Surface ◽  
Heterojunction Solar Cells

This article presents the role of Bi-layer anti-reflection coating (ARC) of TiO2/ZnO and back surface field (BSF) of V2O5 for improving the photovoltaic performance of Cadmium Sulfide (CdS) and Cadmium Telluride (CdTe) based heterojunction solar cells (HJSCs). The simulation was performed at different concentrations, thickness, defect densities of each active materials and working temperatures to optimize the most excellent structure and working conditions for achieving the highest cell performance using obtained optical and electrical parameters value from the experimental investigation on spin-coated CdS, CdTe, ZnO, TiO2 and V2O5 thin films deposited on the glass substrate. The simulation results reveal that the designed CdS/CdTe based heterojunction cell offers the highest efficiency, η of ∼25% with an enhanced open-circuit voltage, Voc of 0.811 V, short circuit current density, Jsc of 38.51 mA cm−2, fill factor, FF of 80% with bi-layer ARC and BSF. Moreover, it appears that the TiO2/ZnO bi-layer ARC, as well as ETL and V2O5 as BSF, could be highly promising materials of choice for CdS/CdTe based heterojunction solar cell.

scholarly journals Effects of Different Doping Ratio of Cu Doped CdS on QDSCs Performance

2015 ◽  
Vol 2015 ◽  
pp. 1-4
Author(s):  
Xiaojun Zhu ◽  
Xiaoping Zou ◽  
Hongquan Zhou
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Photoelectric Conversion Efficiency ◽  
Photoelectric Conversion ◽  
Sensitized Solar Cells ◽  
Doping Ratio

We use the successive ionic layer adsorption and reaction (SILAR) method for the preparation of quantum dot sensitized solar cells, to improve the performance of solar cells by doping quantum dots. We tested the UV-Vis absorption spectrum of undoped CdS QDSCs and Cu doped CdS QDSCs with different doping ratios. The doping ratios of copper were 1 : 100, 1 : 500, and 1 : 1000, respectively. The experimental results show that, under the same SILAR cycle number, Cu doped CdS quantum dot sensitized solar cells have higher open circuit voltage, short circuit current density photoelectric conversion efficiency than undoped CdS quantum dots sensitized solar cells. Refinement of Cu doping ratio are 1 : 10, 1 : 100, 1 : 200, 1 : 500, and 1 : 1000. When the proportion of Cu and CdS is 1 : 10, all the parameters of the QDSCs reach the minimum value, and, with the decrease of the proportion, the short circuit current density, open circuit voltage, and the photoelectric conversion efficiency are all increased. When proportion is 1 : 500, all parameters reach the maximum values. While with further reduction of the doping ratio of Cu, the parameters of QDSCs have a decline tendency. The results showed that, in a certain range, the lower the doping ratio of Cu, the better the performance of quantum dot sensitized solar cell.

scholarly journals Benzothiadiazole Based Cascade Material to Boost the Performance of Inverted Ternary Organic Solar Cells

Energies ◽  
2020 ◽  
Vol 13 (2) ◽  
pp. 450 ◽  
Author(s):  
Miron Krassas ◽  
Christos Polyzoidis ◽  
Pavlos Tzourmpakis ◽  
Dimitriοs M. Kosmidis ◽  
George Viskadouros ◽  
...  
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Fused Ring ◽  
Electron Cascade ◽  
First Time

A conjugated, ladder-type multi-fused ring 4,7-dithienbenzothiadiazole:thiophene derivative, named as compound ‘T’, was for the first time incorporated, within the PTB7:PC71BM photoactive layer for inverted ternary organic solar cells (TOSCs) realization. The effective energy level offset caused by compound T between the polymeric donor and fullerene acceptor materials, as well as its resulting potential as electron cascade material contribute to an enhanced exciton dissociation, electron transfer facilitator and thus improved overall photovoltaic performance. The engineering optimization of the inverted TOSC, ITO/PFN/PTB7:Compound T(5% v/v):PC71BM/MoO3/Al, resulted in an overall power conversion efficiency (PCE) of 8.34%, with a short-circuit current density (Jsc) of 16.75 mA cm−2, open-circuit voltage (Voc) of 0.74 V and a fill factor (FF) of 68.1%, under AM1.5G illumination. This photovoltaic performance was improved by approximately 12% with respect to the control binary device.

A naphthodithiophene-based nonfullerene acceptor for high-performance polymer solar cells with a small energy loss

2020 ◽  
Vol 8 (19) ◽  
pp. 6513-6520 ◽  
Author(s):  
Xingliang Dong ◽  
Qing Guo ◽  
Qi Liu ◽  
Lei Zhu ◽  
Xia Guo ◽  
...  
Keyword(s):  
High Performance ◽  
Open Circuit Voltage ◽  
Polymer Solar Cells ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Small Energy ◽  
High Performance Polymer ◽  
Nonfullerene Acceptor

A new non-fullerene acceptor named NTO-4F is developed. The optimal PSC based on PM6:NTO-4F achieves a PCE of 11.5% with simultaneously high open-circuit voltage of 0.99 V and short-circuit current density of 19.1 mA cm−2.

HYBRID ORGANIC SOLAR CELLS BLENDED WITH CNTs

2015 ◽  
Vol 22 (06) ◽  
pp. 1550072
Author(s):  
SUDIP ADHIKARI ◽  
HIDEO UCHIDA ◽  
MASAYOSHI UMENO
Keyword(s):  
Solar Cells ◽  
Organic Solar Cells ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Photovoltaic Device ◽  
Device Fabrication ◽  
Walled Cnts

In this paper, composite carbon nanotubes (C-CNTs); single-walled CNTs (SWCNTs) and multi-walled CNTs (MWCNTs) are synthesized using an ultrasonic nebulizer in a large quartz tube for photovoltaic device fabrication in poly-3-octyl-thiophene (P3OT)/ n - Si heterojunction solar cells. We found that the device fabricated with C-CNTs shows much better photovoltaic performance than that of a device without C-CNTs. The device with C-CNTs shows open-circuit voltage (Voc) of 0.454 V, a short circuit current density (Jsc) of 12.792 mA/cm2, fill factor (FF) of 0.361 and power conversion efficiency of 2.098 %. Here, we proposed that SWCNTs and MWCNTs provide efficient percolation paths for both electron and hole transportation to opposite electrodes and leading to the suppression of charge carrier recombination, thereby increasing the photovoltaic device performance.

Iodide management in formamidinium-lead-halide–based perovskite layers for efficient solar cells

Science ◽  
2017 ◽  
Vol 356 (6345) ◽  
pp. 1376-1379 ◽  
Author(s):  
Woon Seok Yang ◽  
Byung-Wook Park ◽  
Eui Hyuk Jung ◽  
Nam Joong Jeon ◽  
Young Chan Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Performance ◽  
Deep Level ◽  
Short Circuit ◽  
Perovskite Solar Cells ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Small Cells ◽  
Iodide Ions

The formation of a dense and uniform thin layer on the substrates is crucial for the fabrication of high-performance perovskite solar cells (PSCs) containing formamidinium with multiple cations and mixed halide anions. The concentration of defect states, which reduce a cell’s performance by decreasing the open-circuit voltage and short-circuit current density, needs to be as low as possible. We show that the introduction of additional iodide ions into the organic cation solution, which are used to form the perovskite layers through an intramolecular exchanging process, decreases the concentration of deep-level defects. The defect-engineered thin perovskite layers enable the fabrication of PSCs with a certified power conversion efficiency of 22.1% in small cells and 19.7% in 1-square-centimeter cells.

scholarly journals Cu-Doped-CdS/In-Doped-CdS Cosensitized Quantum Dot Solar Cells

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
Lin Li ◽  
Xiaoping Zou ◽  
Hongquan Zhou ◽  
Gongqing Teng
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Photoelectric Conversion Efficiency ◽  
Photoelectric Conversion ◽  
Quantum Dot Solar Cells ◽  
Cds Quantum Dot

Cu-doped-CdS and In-doped-CdS cosensitized (Cu-doped-CdS/In-doped-CdS) quantum dot solar cells (QDSCs) are introduced here. Different cosensitized sequences, doping ratios, and the thickness (SILAR cycles) of Cu-doped-CdS and In-doped-CdS are discussed. Compared with undoped CdS QDSCs, the short circuit current density, UV-Vis absorption spectra, IPCE (monochromatic incident photon-to-electron conversion), open circuit voltage, and so on are all improved. The photoelectric conversion efficiency has obviously improved from 0.71% to 1.28%.

Fabrication of TiO2 Nanotubes Array by Anodization for DSSC

2013 ◽  
Vol 743-744 ◽  
pp. 920-925
Author(s):  
Hong Zhou Yan ◽  
Jun You Yang ◽  
Shuang Long Feng ◽  
Ming Liu ◽  
Jiang Ying Peng ◽  
...  
Keyword(s):  
Fill Factor ◽  
Open Circuit Voltage ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Tetrabutyl Titanate ◽  
X Ray Diffraction ◽  
X Ray

TiO2 nanotubes array was fabricated by anodization. Effect of reaction duration on the morphology of TiO2 nanotube arrays was studied detailedly. The structure and morphology of the prepared nanotubes array was characterized by X-ray diffraction and scanning electron microscopy, respectively. The fabricated TiO2 arrays were peeled off and adhered to FTO glass with adhesive (mixture of tetrabutyl titanate and polyethylene glycol), then they were sintered at 450 for photoanode of DSSC. The photovoltaic performance of the prepared sample as the DSSC anode was investigated. An open circuit voltage of 0.69V and a short circuit current density of 7.78mA/cm2 were obtained, and the fill factor and the convert efficiency were 0.517 and 2.78%, respectively.

scholarly journals Improving the Morphology of the Perovskite Absorber Layer in Hybrid Organic/Inorganic Halide Perovskite MAPbI3 Solar Cells

2017 ◽  
Vol 2017 ◽  
pp. 1-9 ◽  
Author(s):  
I. J. Ogundana ◽  
S. Y. Foo
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
High Performance ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Perovskite Solar Cells ◽  
Short Circuit Current ◽  
Open Circuit ◽  
Perovskite Layer ◽  
Large Variability

Recently, perovskite solar cells have attracted tremendous attention due to their excellent power conversion efficiency, low cost, simple fabrications, and high photovoltaic performance. Furthermore, the perovskite solar cells are lightweight and possess thin film and semitransparency. However, the nonuniformity in perovskite layer constitutes a major setback to the operation mechanism, performance, reproducibility, and degradation of perovskite solar cells. Therefore, one of the main challenges in planar perovskite devices is the fabrication of high quality films with controlled morphology and least amount of pin-holes for high performance thin film perovskite devices. The poor reproducibility in perovskite solar cells hinders the accurate fabrication of practical devices for use in real world applications, and this is primarily as a result of the inability to control the morphology of perovskites, leading to large variability in the characteristics of perovskite solar cells. Hence, the focus of research in perovskites has been mostly geared towards improving the morphology and crystallization of perovskite absorber by selecting the optimal annealing condition considering the effect of humidity. Here we report a controlled ambient condition that is necessary to grow uniform perovskite crystals. A best PCE of 7.5% was achieved along with a short-circuit current density of 15.2 mA/cm2, an open-circuit voltage of 0.81 V, and a fill factor of 0.612 from the perovskite solar cell prepared under 60% relative humidity.

Effects of Deposition Parameters on the Structure and Photovoltaic Performance of Si Thin Films by Metal Induced Growth

2008 ◽  
Vol 1123 ◽  
Author(s):  
Peter T. Mersich ◽  
Shubhranshu Verma ◽  
Wayne A. Anderson ◽  
Rossman F. Giese
Keyword(s):  
Thin Films ◽  
Absorption Coefficient ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Photovoltaic Properties ◽  
X Ray ◽  
Metal Induced Growth

AbstractA metal-induced growth (MIG) process was employed to deposit thin films of microcrystalline silicon (μc-Si) for solar cell applications. Due to different grain orientations of the crystals, the absorption coefficient of μc-Si is about 10 times higher than the absorption coefficient of single crystalline Si. The properties of the Si film were investigated resulting from variations in several parameters. A range of Ni and Co thicknesses were examined from 7.5 nm to 60 nm including combinations of the two, while the dc sputtering power was stepped up from 150 W to 225 W. The structure of the resulting film was studied using scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDS) and x-ray diffraction (XRD). SEM of the film revealed that 5 hr of Si deposition at 150 W yields a film thickness of 6.5 μm and a maximum grain size of about 0.6 μm. EDS data showed that at the middle of the Si film the atomic percentage of the Si was 99.17%. XRD data showed that the dominant crystal orientation is {220}. To characterize the photovoltaic properties of the μc-Si, Schottky photodiodes were fabricated. Ni alone as the seed layer resulted in ohmic behavior. With Co only, MIG formed a rectifying contact with open-circuit voltage (V∝). The combination of Co layered over Ni formed better thin films and gave a Voc of 0.24 V and short-circuit current density (Jsc) of 5.0 mA/cm2 since the Co prevents Ni contamination of the top of the grown Si layer.

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