scholarly journals Structural and Optical Properties of CuInS2Thin Films Prepared by Magnetron Sputtering and Sulfurization Heat Treatment

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Rongfeng Guan ◽  
Xiaoxue Wang ◽  
Qian Sun
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Magnetron Sputtering ◽  
Treatment Temperature ◽  
Gas Pressure ◽  
X Ray Diffraction ◽  
Raman Spectrometry ◽  
Optimization Of Process Parameters ◽  
Sputtering Power ◽  
Good Crystallinity

CuInS2thin films were prepared by sulfurization of Cu-In precursor films through magnetron sputtering and the resulting films characterized using X-ray diffraction, Raman spectrometry, and UV-Vis spectrophotometry. The results demonstrate that a sputtering power of 80–120 W is more suitable for sputtered Cu-In precursor films and can be used to obtain CuInS2films with good crystallinity through vulcanization heat treatment. The sputtering gas pressure and sulfurization temperature were shown to impact on the film quality due to improper processes during the CuInS2phase. Some of the CuIn11S17and CuS2impurities were observed in the composition of the prepared CuInS2thin films. Optimization of process parameters obtained from the experimental data was determined as a sputtering power of 80~120 W, a sputtering gas pressure of 0.6–0.8 Pa, a heat treatment temperature of 450~470°C, and a holding time of 2~3 hours. The optical band gap obtained for CuInS2thin films is between 1.48 and 1.5 eV.

A STUDY ON THERMO-OPTIC EFFECT OF β POLY(VINYLIDENE FLUORIDE) THIN FILMS PREPARED BY SOLUTION CASTING METHOD

2008 ◽  
Vol 15 (01n02) ◽  
pp. 175-181 ◽  
Author(s):  
YINGXUE XI ◽  
HUIQING FAN ◽  
WEIGUO LIU ◽  
CHEN YANG ◽  
XIAOLING NIU
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Infrared Imaging ◽  
Vinylidene Fluoride ◽  
Treatment Temperature ◽  
X Ray Diffraction ◽  
Long Wavelength ◽  
Β Phase ◽  
Poly Vinylidene Fluoride ◽  
Solution Casting Method

The Poly(vinylidene) fluoride (PVDF) thin films with a high content of β-phase were prepared by controlling heat-treatment temperature using casting from the poled solvents. The crystallite microstructure of thin films was depicted by the techniques of X-ray diffraction and FTIR. The results showed that heat treatment was favorable for inducing the β- and γ-phase formation of PVDF. The β phase films were obtained with heat treatment at temperatures ranging from 60°C to 120°C and annealing at 120°C after casting from DMF. The thermo-optical effect of β phase PVDF films was investigated using a spectroscopic ellipsometer. At temperatures ranging from 20°C to 100°C, the refractive index of PVDF was negatively correlated with the temperature between 350 and 1500 nm. The value of the t.o. coefficient of PVDF films was calculated at all temperatures. The maximum value of the t.o. coefficient was about 3.3 × 10-4/°C at the ascending stage of temperature and 3.0 × 10-4/°C at the descending stage of temperature. Therefore, it is possible to use the thermo-optic effect of the β phase PVDF for long wavelength infrared imaging.

SYNTHESIS OF CUPROUS OXIDE THIN FILMS BY RF-MAGNETRON SPUTTERING

2018 ◽  
Vol 25 (02) ◽  
pp. 1850051 ◽  
Author(s):  
WENHAO LI
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Cuprous Oxide ◽  
Gas Flow ◽  
Copper Ion ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Sputtering Power ◽  
Specific Scheme ◽  
Temperature Exchange

Cuprous oxide (Cu2O) thin films were produced from metallic Cu targets on [Formula: see text]-Al2O3 (000[Formula: see text]) substrate by radio frequency magnetron sputtering technology. Three batches of samples were deposited under various sputtering parameters by modulating substrate temperature, gas flow and sputtering power, respectively. The samples were characterized by X-ray diffraction and field-emission scanning electron microscopy. Through the experiment, the influences of the sputtering conditions were systematically investigated. It could be inferred that the crystallization extent and the crystal orientation in Cu2O thin films mainly depend on the temperature exchange, which contribute to the variation of the film morphology. Moreover, the gas flow has an effect on the valence of the copper ion in the film and the sputtering power mainly affects the growth rate of the films. This research promotes a more specific scheme to deposit proper Cu2O thin films with proper morphology and useful properties.

scholarly journals Magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphology of aluminum thin films deposited on SiO2/Si substrates

2021 ◽  
Vol 127 (10) ◽  
Author(s):  
Somayeh Asgary ◽  
Elnaz Vaghri ◽  
Masoumeh Daemi ◽  
Parisa Esmaili ◽  
Amir H. Ramezani ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
X Ray ◽  
Si Substrates ◽  
Sputtering Power ◽  
Microstructural Surface ◽  
Deposited Films

AbstractIn this research, aluminum (Al) thin films were deposited on SiO2/Si substrates using RF magnetron sputtering technique for analyzing the influence of RF sputtering power on microstructural surface morphologies. Different sputtering RF powers (100–400 W) were employed to form Al thin films. The characteristics of deposited Al thin films are investigated using X-ray diffraction pattern (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and Fourier-transforms infrared (FTIR) spectroscopy. The X-ray diffraction (XRD) results demonstrate that the deposited films in low sputtering power have amorphous nature. By increasing the sputtering power, crystallization is observed. AFM analysis results show that the RF power of 300 W is the optimum sputtering power to grow the smoothest Al thin films. FTIR results show that the varying RF power affect the chemical structure of the deposited films. The SEM results show that by increasing the sputtering power leads to the formation of isolated texture on the surface of substrate. In conclusion, RF power has a significant impact on the properties of deposited films, particularly crystallization and shape.

A Study of ITO Thin Films Fabricated by DC Magnetron Sputtering Method

2013 ◽  
Vol 834-836 ◽  
pp. 79-89
Author(s):  
Xian Ming Yang ◽  
Lin Liu ◽  
Juan Xiu Lin
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Pressure Work ◽  
Atomic Force ◽  
Work Pressure ◽  
Sputtering Power ◽  
Ito Thin Films ◽  
Test Table

With high optical transparency and electrical conductivity, ITO thin films were fabricated by DC magnetron sputtering. Based on orthogonal test table L18 (35), the effects of process parameters included water partial pressure, work pressure, substrate temperature, oxygen flow rate and sputtering power, on the optoelectronics properties of ITO thin films were investigated in detail(systematically). Calibration of sheet resistance transmittance, atomic force microscope, and X-ray diffraction were employed to characterize the ITO films.

Effect of the Heat Treatment on the Microstructure and Morphology of Cigs Thin Films Prepared by RF Magnetron Sputtering at Room Temperature

2020 ◽  
Vol 1012 ◽  
pp. 119-124
Author(s):  
Paulo Victor Nogueira da Costa ◽  
Rodrigo Amaral de Medeiro ◽  
Carlos Luiz Ferreira ◽  
Leila Rosa Cruz
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Morphological Changes ◽  
Film Surface ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates

This work investigates the microstructural and morphological changes on CIGS thin films submitted to a post-deposition heat treatment. The CIGS 1000 nm-thick films were deposited at room temperature by RF magnetron sputtering onto glass substrates covered with molybdenum films. After deposition, the samples were submitted to a heat treatment, with temperatures ranging from 450 to 575 oC. The treatment was also carried out under a selenium atmosphere (selenization), from 400 to 500 oC. Morphological analyzes showed that the as-deposited film was uniform and amorphous. When the treatment was carried out without selenization, the crystallization occurred at or above 450 oC, and the grains remained nanosized. However, high temperatures led to the formation of discontinuities on the film surface and the formation of extra phases, as confirmed by X-ray diffraction data. The crystallization of the films treated under selenium atmosphere took place at lower temperatures. However, above 450 °C the film surface was discontinuous, with a lot of holes, whose amount increased with the temperature, showing that the selenization process was very aggressive. X-ray diffraction analyses showed that the extra phases were eliminated during selenization and the films had a preferential orientation along [112] direction. The results indicate that in the manufacturing process of solar cells, CIGS films deposited at room temperature should be submitted to a heat treatment carried out at 450 °C (without selenization) or 400 °C (with selenization).

Preparation of the Kondo Insulators FeSi by Magnetron Sputtering

2010 ◽  
Vol 663-665 ◽  
pp. 1129-1132 ◽  
Author(s):  
Jin Min Zhang ◽  
Quan Xie ◽  
Vesna Borjanović ◽  
Yan Liang ◽  
Wu Xian Zeng ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Gas Pressure ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Kondo Insulator ◽  
X Ray ◽  
Kondo Insulators ◽  
Sputtering Power ◽  
Ar Gas ◽  
Sputtering Yields

The Kondo insulator FeSi was prepared by DC magnetron sputtering and the effects of sputtering parameters on the formation of FeSi were investigated in detail. The formation of monosilicide FeSi was clarified using X-ray diffraction (XRD) and its microstructure was characterized by scanning electron microscopy (SEM). The results indicate that the sputtering gas pressure, the sputtering power and the Ar flux all have significantly effects on formation of FeSi and the crystalline of the film. The sputtering gas pressure has effects on sputtering yields, depositing rate and the energy of sputtering atoms, the sputtering power has effects on the kinetic energy and the diffusion ability of deposing atoms and the gas flux has the effects on the flowing state of Ar gas. The most optimal sputtering parameters for the preparation of the Kondo insulator FeSi by DC magnetron sputtering are given: 1.5 Pa for sputtering Ar pressure, 100 W for sputtering power and 20 SCCM for sputtering Ar flux.

scholarly journals Reactive Dual Magnetron Sputtering: A Fast Method for Preparing Stoichiometric Microcrystalline ZnWO4 Thin Films

Surfaces ◽  
2021 ◽  
Vol 4 (2) ◽  
pp. 106-114
Author(s):  
Yannick Hermans ◽  
Faraz Mehmood ◽  
Kerstin Lakus-Wollny ◽  
Jan P. Hofmann ◽  
Thomas Mayer ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Photoelectron Spectroscopy ◽  
Fast Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Post Annealing ◽  
Rf Signal ◽  
First Time

Thin films of ZnWO4, a promising photocatalytic and scintillator material, were deposited for the first time using a reactive dual magnetron sputtering procedure. A ZnO target was operated using an RF signal, and a W target was operated using a DC signal. The power on the ZnO target was changed so that it would match the sputtering rate of the W target operated at 25 W. The effects of the process parameters were characterized using optical spectroscopy, X-ray diffraction, and scanning electron microscopy, including energy dispersive X-ray spectroscopy as well as X-ray photoelectron spectroscopy. It was found that stoichiometric microcrystalline ZnWO4 thin films could be obtained, by operating the ZnO target during the sputtering procedure at a power of 55 W and by post-annealing the resulting thin films for at least 10 h at 600 °C. As FTO coated glass substrates were used, annealing led as well to the incorporation of Na, resulting in n+ doped ZnWO4 thin films.

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

In Situ X-Ray Diffraction Studies of Crystallization Growth Behavior in ZnO-Bi2O3-B2O3 Glass as a Route to Functional Optical Devices

MRS Advances ◽  
2018 ◽  
Vol 3 (11) ◽  
pp. 563-567 ◽  
Author(s):  
Quentin Altemose ◽  
Katrina Raichle ◽  
Brittani Schnable ◽  
Casey Schwarz ◽  
Myungkoo Kang ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Glass Ceramics ◽  
Treatment Temperature ◽  
Crystal Phase ◽  
X Ray Diffraction ◽  
X Ray ◽  
In Situ Xrd ◽  
Dsc Measurements ◽  
Transmission Window

ABSTRACTTransparent optical ZnO–Bi2O3–B2O3 (ZBB) glass-ceramics were created by the melt quenching technique. In this work, a melt of the glass containing stoichiometric ratios of Zn/Bi/B and As was studied. Differential scanning calorimeter (DSC) measurements was used to measure the thermal behavior. VIS/NIR transmission measurements were used to determine the transmission window. X-ray diffraction (XRD) was used to determine crystal phase. In this study, we explore new techniques and report a detailed study of in-situ XRD of the ZBB composition in order to correlate nucleation temperature, heat treatment temperature, and heat treatment duration with induced crystal phase.

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