scholarly journals Characterization of Multiferroic Domain Structures in Multiferroic Oxides

2015 ◽  
Vol 2015 ◽  
pp. 1-8 ◽  
Author(s):  
Lizhi Liang ◽  
Heng Wu ◽  
Lei Li ◽  
Xinhua Zhu

Multiferroic oxides have been received much attention due to that these materials exhibit multiple ferroic order parameters (e.g., electric polarization in ferroelectrics, magnetization in ferromagnetics, or spontaneous strain in ferroelastics) simultaneously in the same phase in a certain temperature range, which offer an exciting way of coupling between the ferroic order parameters. Thus, this provides a possibility for constructing new type of multifunctional devices. The multiferroic domain structures in these materials are considered to be an important factor to improve the efficiency and performance of future multiferroic devices. Therefore, the domain structures in multiferroic oxides are widely investigated. Recent developments in domain characterization techniques, particularly the aberration-corrected transmission electron microscopy (TEM), have enabled us to determine the domain structures at subangstrom scale, and the recent development ofin situTEM techniques allows ones to study the dynamic behaviors of multiferroic domains under applied fields or stress while the atomic structure is imaged directly. This paper provides a review of recent advances on the characterization of multiferroic domain structures in multiferroic oxides, which have been achieved by the notable advancement of aberration-corrected TEM.

2019 ◽  
Vol 3 (27) ◽  
pp. 139-153 ◽  
Author(s):  
Loic Dupont ◽  
Lydia Laffont ◽  
Sylvie Grugeon ◽  
Stephane Laruelle ◽  
Vincent Bodenez ◽  
...  

Author(s):  
J. L. Batstone ◽  
J. W. Steeds

Thin film, high purity II-VI semiconductors such as ZnSe are attracting increasing interest as optoelectronic device materials. Recent developments in low temperature epitaxial growth techniques such as organometallic chemical vapour deposition (MOCVD) have enabled growth of single crystal films on a variety of different substrates resulting in blue emission bands at 300K. Characterization of undoped, Al-doped and In-doped MOCVD ZnSe/(100)GaAs layers grown at RSRE, Malvern has been performed using transmission electron microscopy (TEM) and cathodoluminescence (CL). Optically and electrically active stacking faults and dislocations have been observed, revealing correlations with emission bands Y at 2.60eV and S at 2.52eV. Y and S are particularly characteristic of epitaxial growth and radiative emission has been observed from individual dislocations and complex tangles of dislocations commonly found in doped ZnSe. Recent work has concentrated on obtaining an understanding of the mechanism of radiative recombination at dislocations by studying thermal activation energies and excitation dependences.


Author(s):  
L. F. Fu ◽  
Y. C. Wang ◽  
B. Jiang ◽  
F. Shen ◽  
M. Strauss ◽  
...  

Abstract Recent developments in aberration-corrected transmission electron microscopy have drawn much attention from the semiconductor characterization community. Two new developments in transmission electron microscopy, image aberration correctors and probe aberration correctors, are discussed in term of their applications in characterizing gate oxide dielectrics for the IC industry.


2006 ◽  
Vol 12 (S02) ◽  
pp. 1344-1345
Author(s):  
D Williams ◽  
M Watanabe

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2006


2006 ◽  
Vol 317-318 ◽  
pp. 155-158
Author(s):  
Sang Mo Koo ◽  
Seung Hwan Shim ◽  
Jong Won Yoon ◽  
Kwang Bo Shim

The dense Pb(Zr0.52Ti0.48)O3 (PZT) piezoelectric ceramics have been prepared at a low temperature by a spark plasma sintering (SPS) method without excess PbO addition and their structural features including domains were systematically investigated. The fine microstructure consisting of submicrometer-sized grains as well as relative density reaching 99% was achieved by sintering at 950°C which is 400°C lower than that of pressureless sintering (PLS). Transmission electron microscopy (TEM) results confirmed that the sintered specimen contained very dense domain structures inside each grain, showing the nanoscaled single-domains even at the small grains (below 100 nm). The SPS-processed PZT exhibited better piezoelectric properties than those of the PLS-processed one, which is attributed to its fine-microstructural feature.


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