scholarly journals Nanomaterials for Sensor Device Applications

2014 ◽  
Vol 2014 ◽  
pp. 1-1
Author(s):  
Liang-Wen Ji ◽  
Sheng-Joue Young ◽  
Chih-Hung Hsiao ◽  
Artde Donald Kin-Tak Lam
Keyword(s):  
Sensor Device ◽  
Device Applications

scholarly journals Solid-State Battery Technologies for Advanced IoT Sensor Device Applications

Seikei-Kakou ◽  
2019 ◽  
Vol 31 (9) ◽  
pp. 334-337
Author(s):  
Junji Akimoto ◽  
Hiroshi Nagata ◽  
Kunimitsu Kataoka ◽  
Tadayoshi Akao ◽  
Jun Akedo
Keyword(s):  
Solid State ◽  
Sensor Device ◽  
Solid State Battery ◽  
Device Applications

Flexible Energy Harvesting System for Wearable IoT Sensor Device Applications

2018 ◽  
Author(s):  
Jung Ouk Kim ◽  
Yongwan Lee ◽  
Jongsik Lim ◽  
Dal Ahn ◽  
Won-Sang Yoon ◽  
...  
Keyword(s):  
Energy Harvesting ◽  
Sensor Device ◽  
Device Applications ◽  
Energy Harvesting System

Highly sensitive pH dependent acetone sensor based on ultrananocrystalline diamond materials at room temperature

RSC Advances ◽  
2016 ◽  
Vol 6 (105) ◽  
pp. 102821-102830 ◽  
Author(s):  
Deepa Kathiravan ◽  
Bohr-Ran Huang ◽  
Adhimoorthy Saravanan ◽  
Gerd Keiser ◽  
Chien-Jui Yeh ◽  
...  
Keyword(s):  
Room Temperature ◽  
Electrochemical Sensing ◽  
Sensing Properties ◽  
Sensor Device ◽  
Ultrananocrystalline Diamond ◽  
Highly Sensitive ◽  
Device Applications ◽  
Ph Dependent ◽  
Acetone Sensor

Diamond-based materials often considered inappropriate for sensor device applications, however these robust materials exhibit unpredictable electrochemical sensing properties.

scholarly journals Techniques for Production of Large Area Graphene for Electronic and Sensor Device Applications

2014 ◽  
Vol 1 (1) ◽  
Author(s):  
Bing Li ◽  
Genhua Pan ◽  
Shakil A. Awan ◽  
Neil Avent
Keyword(s):  
Vapour Deposition ◽  
Chemical Vapour ◽  
Production Method ◽  
Dielectric Substrate ◽  
Industrial Applications ◽  
Large Area ◽  
Sensor Device ◽  
Solid Carbon Source ◽  
Device Applications ◽  
Semiconductor Fabrication

AbstractHere we review commonly used techniques for the production of large area and high quality graphene to meet the requirements of industrial applications, including epitaxial growth on SiC, chemical vapour deposition (CVD) on transition metals and growth from solid carbon source. The review makes a comparison of the growth mechanisms, quality (such as mobility and homogeneity) and properties of the resultant graphene, limitations and the prospect of each production method. A particular focus of the review is on direct (transfer free) growth on dielectric substrate as this is potentially one of the promising techniques for graphene production which can readily be integrated into existing semiconductor fabrication processes.

TEM and cathodoluminescence of precipitates in II-VI semiconductors

1988 ◽  
Vol 46 ◽  
pp. 488-489
Author(s):  
Joanna L. Batstone
Keyword(s):  
Crystal Growth ◽  
Band Gap ◽  
Local Strain ◽  
Wide Band ◽  
Optoelectronic Device ◽  
Wide Band Gap ◽  
Bulk Crystal Growth ◽  
Transmission Electron ◽  
Device Applications ◽  
Stoichiometry Control

Interest in II-VI semiconductors centres around optoelectronic device applications. The wide band gap II-VI semiconductors such as ZnS, ZnSe and ZnTe have been used in lasers and electroluminescent displays yielding room temperature blue luminescence. The narrow gap II-VI semiconductors such as CdTe and HgxCd1-x Te are currently used for infrared detectors, where the band gap can be varied continuously by changing the alloy composition x.Two major sources of precipitation can be identified in II-VI materials; (i) dopant introduction leading to local variations in concentration and subsequent precipitation and (ii) Te precipitation in ZnTe, CdTe and HgCdTe due to native point defects which arise from problems associated with stoichiometry control during crystal growth. Precipitation is observed in both bulk crystal growth and epitaxial growth and is frequently associated with segregation and precipitation at dislocations and grain boundaries. Precipitation has been observed using transmission electron microscopy (TEM) which is sensitive to local strain fields around inclusions.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

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