scholarly journals Ultrathin Anode Buffer Layer for Enhancing Performance of Polymer Solar Cells

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Dun Wang ◽  
Jian Wang ◽  
Ling-liang Li ◽  
Qiao-shi An ◽  
Hui Huang ◽  
...  

A series of polymer solar cells (PSCs) based on poly[(4,8-bis-(2-ethylhexyloxy)-benzo[1,2-b:4,5-b′(dithiophene)-2,6-diyl-alt-(4-(2-ethylhexanoyl)-thieno[3,4-b]thiophene)-2,6-diyl] (PBDTTT-C) and [6,6]phenyl-C71-butyric acid methyl ester (PC71BM) were fabricated with various anode buffer layers. The power conversion efficiency (PCE) of PSCs was improved to 4.91% for the cells with PEDOT:PSS/LiF (1 nm) as anode buffer layer, which corresponds to 26.2% efficiency improvement compared with the cells with PEDOT:PSS as anode buffer layer. The PSCs with PEDOT:PSS/LiF as anode buffer layer show a maximum short-circuit density (Jsc) of 13.70 mA/cm2, with open circuit voltage (Voc) of 0.73 V and fill factor (FF) of 49.1% under illumination 100 mW/cm2AM 1.5 G simulated solar light. The dominant mechanism for the performance improvement of PSCs could be attributed to the increased charge carrier collection ability by anode buffer layers.

2008 ◽  
Vol 1091 ◽  
Author(s):  
Osamu Yoshikawa ◽  
Taro Sonobe ◽  
Takashi Sagawa ◽  
Susumu Yoshikawa

AbstractThe performance of the devices of bulk heterojunction polymer-based solar cells were investigated by using poly(3-hexylthiophene) (P3HT) and (6,6)-phenyl C61 butyric acid methyl ester (PCBM) as light absorption (viz. active) layer, with TiOx as interlayer as follows: ITO/PEDOT:PSS/P3HT-PCBM/TiOx/Al [1] through the treatment of microwave irradiation (single mode of 2.45 GHz, 800 W for 1, 2.5, or 5 min). Such treatments enabled to increase the short-circuit current density Jsc (from 4.53 mA cm−2 to 7.27 mA cm−2) and fill factor FF (from 0.41 to 0.66) of the cell, though the open circuit voltage Voc was decreased (from 0.61 V to 0.57 V) along the irradiation. Absorption spectra of P3HT-PCBM blended film before and after the microwave treatment were observed. Shoulders at 550 nm and 600 nm appeared after the irradiation. This result implies that the microcrystallization of P3HT was slightly promoted through the microwave treatment.


2017 ◽  
Vol 7 (1) ◽  
Author(s):  
Binrui Xu ◽  
Sai-Anand Gopalan ◽  
Anantha-Iyengar Gopalan ◽  
Nallal Muthuchamy ◽  
Kwang-Pill Lee ◽  
...  

Abstract Poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) is most commonly used as an anode buffer layer in bulk-heterojunction (BHJ) polymer solar cells (PSCs). However, its hygroscopic and acidic nature contributes to the insufficient electrical conductivity, air stability and restricted photovoltaic (PV) performance for the fabricated PSCs. In this study, a new multifunctional additive, 2,3-dihydroxypyridine (DOH), has been used in the PEDOT: PSS buffer layer to obtain modified properties for PEDOT: PSS@DOH and achieve high PV performances. The electrical conductivity of PEDOT:PSS@DOH films was markedly improved compared with that of PEDOT:PSS. The PEDOT:PSS@DOH film exhibited excellent optical characteristics, appropriate work function alignment, and good surface properties in BHJ-PSCs. When a poly(3-hexylthiohpene):[6,6]-phenyl C61-butyric acid methyl ester blend system was applied as the photoactive layer, the power conversion efficiency of the resulting PSCs with PEDOT:PSS@DOH(1.0%) reached 3.49%, outperforming pristine PEDOT:PSS, exhibiting a power conversion enhancement of 20%. The device fabricated using PEDOT:PSS@DOH (1.0 wt%) also exhibited improved thermal and air stability. Our results also confirm that DOH, a basic pyridine derivative, facilitates adequate hydrogen bonding interactions with the sulfonic acid groups of PSS, induces the conformational transformation of PEDOT chains and contributes to the phase separation between PEDOT and PSS chains.


2011 ◽  
Vol 1321 ◽  
Author(s):  
C.H. Hsu ◽  
C.Y. Lee ◽  
P.H. Cheng ◽  
C.K. Chuang ◽  
C.C. Tsai

ABSTRACTThe study focuses on the influence of the hydrogenated amorphous silicon carbide (a-SiC:H) buffer layer in hydrogenated amorphous silicon (a-Si:H) single-junction and tandem thin-film solar cells. By increasing the undoped a-SiC:H buffer layer thickness from 6nm to 12nm, the JSC in single-junction cell was significantly improved, and the efficiency was increased by 4.5%. The buffer layer also effectively improves the efficiency of the a-Si:H/a-Si:H tandem cells by 7% as a result of the increase in open-circuit voltage (VOC) and short-circuit current (JSC). Although the bottom cell absorbs less short-wavelength photons, the wider-bandgap doped and buffer layers were still necessary for improving the cell efficiency. Presumably, this is because these wider-bandgap layers allow more photons to reach the bottom cell. Also, they can reduce interface recombination.


2012 ◽  
Vol 05 (02) ◽  
pp. 1260004 ◽  
Author(s):  
GENTIAN YUE ◽  
JIHUAI WU ◽  
YUNFANG HUANG ◽  
YAOMING XIAOMING XIAO ◽  
ZHANG LAN

An iodine/iodide-free and polymer heterojunction-sensitized hybrid solar cell is fabricated by using 6,6-phenyl- C61 -butyric acid methyl ester (PCBM) as electronic acceptor, poly(3-hexylthiophene) (P3HT) as donor and TiO2 film as substrate. The PCBM–P3HT heterojunction can harvest ultraviolet-visible light, transport charge carriers, replacing the dyes and electrolytes in dye-sensitized solar cell. The cell with a PCBM/P3HT ratio of 1:2 shows a short circuit current of 5.47 mA⋅cm-2, an open circuit voltage of 0.849 V, a fill factor of 0.640 and a light-to-electric energy conversion efficiency of 2.97% under a simulated solar light irradiation of 100 mW⋅cm-2.


2012 ◽  
Vol 550-553 ◽  
pp. 476-479
Author(s):  
Ai Fen Wang

The three photovoltaic cells with two different anode buffer layer on the basis of Pentacene/C60 as active layer was fabicated, the effect and mechanism of anode buffer layer on performance of organic photovoltaic cell are explored. The experimental result shows transition metal oxide inserted between organic active layer and ITO could increase short circuit current and open-circuit voltage,power conversion efficiency is increased to 107%,so it is effective anode buffer material.


2020 ◽  
Vol 20 (6) ◽  
pp. 3703-3709 ◽  
Author(s):  
S. S. Rawat ◽  
Ashish Kumar ◽  
R. Srivastava ◽  
C. K. Suman

Cobalt phthalocyanine (CoPc) nano thin films have been introduced as a hole buffer layer in organic solar cells with active layer of Poly(3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). The surface morphology and opto-electrical properties of the CoPc thin films have made it an applicable materials for organic solar cells. The nano-thin films of CoPc are continuously distributed over the studied area and the roughness are around 5 to 7 nm for all thickness. The dominant optical absorptions are in the visible range of wavelengths 500 to 800 nm. The CoPc buffer layer is suitable for energy level matching in energy level diagram and enhances the absorption spectrum as well, which facilitate the charge carrier generation, increases charge transport, decreases charge recombination, hence enhance the all device parameters short circuit current density (Jsc), open circuit voltage (Voc) and fill factor (FF). The solar cells efficiency increases by ˜70% and the fill factor increases by ˜45% in comparison to the standard cells. The increase in efficiency and the fill factors of the solar cells may also be attributed to the increasing of shunt and lowering the series resistance of the cells. The cole–cole plots of the devices may be modeled in electrical circuit as a single parallel resistance Rb and capacitance Cb network with a series resistance Rc.


2011 ◽  
Vol 23 (22) ◽  
pp. 5006-5015 ◽  
Author(s):  
Ying Sun ◽  
Shang-Chieh Chien ◽  
Hin-Lap Yip ◽  
Yong Zhang ◽  
Kung-Shih Chen ◽  
...  

2005 ◽  
Vol 865 ◽  
Author(s):  
Marin Rusu ◽  
Thilo Glatzel ◽  
Christian A. Kaufmann ◽  
Axel Neisser ◽  
Susanne Siebentritt ◽  
...  

AbstractFor preparation of ZnO/CdS/Cu(In,Ga)Se2 solar cells, physical vapor deposition (PVD) was employed to deposit CdS buffer layers in ultrahigh vacuum on Se-decapped absorber surfaces, thus realizing an all ‘dry' fabrication process of the device. An 14.1% total area and 14.5% active area efficient ZnO/CdS/Cu(In,Ga)Se2 solar cell under AM1.5 conditions was achieved after annealing the as-prepared solar cells in air. Kelvin probe force microscopy (KPFM) measurements were carried out in-situ to monitor the initial growth of the CdS buffer layer on the absorber, as well as its electronic properties, in particular, the work function. It was observed that the PVD-CdS growth is initially inhibited at the absorber grain boundaries. Quantum efficiency measurements allowed us to suppose that during the initial growth stage a passivation of the grain boundaries occurs. The latter explains the higher short-circuit currents of the cells with PVD-CdS compared to their references with CdS grown by chemical bath deposition (CBD). The beneficial effect of the annealing seems to originate from a formation of a region with higher band gap than that of the absorber bulk and inverted conductivity type at the absorber surface, close to the CdS/Cu(In,Ga)Se2 interface, leading to a dramatic change in the electronic transport properties and finally, to a significant enhancement of the open-circuit voltage. Annealing of the ZnO/PVD-CdS/Cu(In,Ga)Se2 solar cells provides formation of PVDCdS/ Cu(In,Ga)Se2 interface with properties similar to that of reference samples with CBD-CdS.


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