scholarly journals Hole-Phonon Relaxation and Photocatalytic Properties of Titanium Dioxide and Zinc Oxide: First-Principles Approach

2014 ◽  
Vol 2014 ◽  
pp. 1-12 ◽  
Author(s):  
V. P. Zhukov ◽  
V. G. Tyuterev ◽  
E. V. Chulkov ◽  
P. M. Echenique

First-principles calculations for the temporal characteristics of hole-phonon relaxation in the valence band of titanium dioxide and zinc oxide have been performed. A first-principles method for the calculations of the quasistationary distribution function of holes has been developed. The results show that the quasistationary distribution of the holes in TiO2extends to an energy level approximately 1 eV below the top of the valence band. This conclusion in turn helps to elucidate the origin of the spectral dependence of the photocatalytic activity of TiO2. Analysis of the analogous data for ZnO shows that in this material spectral dependence of photocatalytic activity in the oxidative reactions is unlikely.

RSC Advances ◽  
2021 ◽  
Vol 11 (39) ◽  
pp. 24416-24423
Author(s):  
Xiaomin Hou ◽  
Qi Cheng ◽  
Jianrong Wang ◽  
Qingfeng Wu ◽  
Weibin Zhang

Natural dolomite exhibits notable photocatalytic activity due to the isomorphous substitution of Fe2+ for Mg2+ in the lattice, implying that it can be used as a low-cost photocatalyst.


2018 ◽  
Vol 56 (5) ◽  
pp. 2285-2290
Author(s):  
Ying Xu ◽  
Ying Zhou ◽  
Guo Zheng Nie ◽  
Daifeng Zou ◽  
Zhi Min Ao

2007 ◽  
Vol 90 (3) ◽  
pp. 033108 ◽  
Author(s):  
Chun Li ◽  
Wanlin Guo ◽  
Yong Kong ◽  
Huajian Gao

2005 ◽  
Vol 483-485 ◽  
pp. 573-576 ◽  
Author(s):  
Toshiharu Ohnuma ◽  
Hidekazu Tsuchida ◽  
Tamotsu Jikimoto ◽  
Atsumi Miyashita ◽  
Masahito Yoshikawa

First-principles calculations for the abrupt SiO2/4H-SiC interfaces accounting for Si-Si bonding and Nitrogen atom termination have been performed. Interface states due to Si-Si bonds appear at the valence band edge. Interface states at the midgap vanish when N atom terminates the Si dangling bond, but the interface states arising from the Si-N bonds appear at the valence band edge at the same time.


2009 ◽  
Vol 1166 ◽  
Author(s):  
Dmitri Volja ◽  
Marco Fornari ◽  
Boris Kozinsky ◽  
Nicola Marzari

AbstractElectronic properties of ternary skutterudites AX3/2Y3/2 (A=Co, X=Ge, Sn and Y=S, Te) are investigated using first principles calculations to clarify recent experimental results. Band derivatives are computed accurately within an approach based on Maximally Localized Wannier Functions (MLWFs). Band structures exhibit larger effective masses compared to parental binary CoSb3. Our results also indicate a more parabolic dispersion near the top of the valence band and a multivalley character in both conduction and valence band. Despite the improved thermopower these skutterudites has relatively low power factor due to increased resistivity. The fundamental cause of such large resistivity seems to be associated with the ionicity of the bonding.


Crystals ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 266 ◽  
Author(s):  
Huanzhi Hu ◽  
Zhibin Shi ◽  
Peng Wang ◽  
Weiping Zhou ◽  
Tai-Chang Chiang ◽  
...  

The transformations of the topological phase and the edge modes of a double-bilayer bismuthene were investigated with first-principles calculations and Green’s function as the inter-bilayer spacing increased from 0 Å to 10 Å. At a critical spacing of 2 Å, a topological phase transition from a topological insulator to a band insulator resulting from a band inversion between the highest valence band and the second lowest conduction band, was observed, and this was understood based on the particular orbital characters of the band inversion involved states. The edge modes of double-bilayer bismuthene survived the phase transition. When d was 2 Å < d < 4 Å, the interaction between the edge modes of two separated bismuthene bilayers induced an anti-crossing gap and resulted in a trivial band connection. At and beyond 4 Å, the two bilayers behavior decoupled entirely. The results demonstrate the transformability of the topological phase and the edge modes with the inter-bilayer spacing in double-bilayer bismuthene, which may be useful for spintronic applications.


2015 ◽  
Vol 17 (45) ◽  
pp. 30450-30460 ◽  
Author(s):  
Baljinder Singh ◽  
Satvinder Singh ◽  
Janpreet Singh ◽  
G. S. S. Saini ◽  
D. S. Mehta ◽  
...  

Zinc oxide (ZnO) nanostructures with different morphologies are prepared in the presence of surface active molecules such as sodium dodecyl sulphate (SDS), Tween 80 and Triton X-100 by a chemical method.


MRS Advances ◽  
2017 ◽  
Vol 2 (49) ◽  
pp. 2799-2805
Author(s):  
Velappa Jayaraman Surya ◽  
Yuvaraj Sivalingam ◽  
Velappa Jayaraman Sowmya ◽  
Palani Elumalai ◽  
Gabriele Magna ◽  
...  

ABSTRACTMany heterogeneous and flat two dimensional (2D) materials with finite band gap have been researched for its suitability in exotic applications. For instance, zinc oxide (ZnO) with honey comb structure has optimum band gap that makes it eligible for opto-electronic applications. Recently, our research group have found that pyrene based tetratopic ligands (PTL) are suitable for functionalizing ZnO nanorods. In this study, neat and defective 2D ZnO layer is functionalized with different pyrene based ligands with various functional groups. First principles calculations are done and the degree of affinity of pyrene ligands towards neat and defective ZnO sheets is compared.


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