scholarly journals Characterization of Silver Oxide Films Formed by Reactive RF Sputtering at Different Substrate Temperatures

ISRN Optics ◽  
2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
P. Narayana Reddy ◽  
M. Hari Prasad Reddy ◽  
J. F. Pierson ◽  
S. Uthanna
Keyword(s):  
Room Temperature ◽  
Single Phase ◽  
Silver Oxide ◽  
Rf Sputtering ◽  
Spherical Shape ◽  
Rf Magnetron Sputtering ◽  
Mixed Phase ◽  
Silicon Substrates ◽  
Atomic Force ◽  
Silver Target

Silver oxide (A2O) films were deposited on glass and silicon substrates held at temperatures in the range 303–473 K by reactive RF magnetron sputtering of silver target. The films formed at room temperature were single phase Ag2O with polycrystalline in nature, while those deposited at 373 K were improved in the crystallinity. The films deposited at 423 K were mixed phase of Ag2O and Ag. Atomic force micrographs of the films formed at room temperature were of spherical shape grains with size of 85 nm, whereas those deposited at 473 K were with enhanced grain size of 215 nm with pyramidal shape. Electrical resistivity of the single phase films formed at room temperature was 5.2 × 10−3 Ωcm and that of mixed phase was 4.2 × 10−4 Ωcm. Optical band gap of single phase films increased from 2.05 to 2.13 eV with the increase of substrate temperature from 303 to 373 K, while in mixed phase films it was 1.92 eV.

Growth Front Roughening of Room Temperature Deposited Oligomer Thin Films

2000 ◽  
Vol 648 ◽  
Author(s):  
D. Tsamouras ◽  
G. Palasantzas ◽  
J. Th. M. De Hosson ◽  
G. Hadziioannou
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Room Temperature ◽  
Growth Front ◽  
Silicon Substrates ◽  
Height Distribution ◽  
Force Microscopy ◽  
Atomic Force ◽  
Roughness Amplitude ◽  
Non Gaussian

AbstractGrowth front scaling aspects are investigated for PPV-type oligomer thin films vapor- deposited onto silicon substrates at room temperature. For film thickness d~15-300 nm, commonly used in optoelectronic devices, correlation function measurement by atomic force microscopy yields roughness exponents in the range H=0.45±0.04, and an rms roughness amplitude which evolves with film thickness as a power law σ∝ dβ with β=0.28±0.05. The non-Gaussian height distribution and the measured scaling exponents (H and β) suggest a roughening mechanism close to that described by the Kardar-Parisi-Zhang scenario.

Reactive Sputtering Growth and Characterizations of InN Thin Films on Si Substrates

2012 ◽  
Vol 545 ◽  
pp. 290-293
Author(s):  
Maryam Amirhoseiny ◽  
Hassan Zainuriah ◽  
Ng Shashiong ◽  
Mohd Anas Ahmad
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Nitrogen Gas ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force

We have studied the effects of deposition conditions on the crystal structure of InN films deposited on Si substrate. InN thin films have been deposited on Si(100) substrates by reactive radio frequency (RF) magnetron sputtering method with pure In target at room temperature. The nitrogen gas pressure, applied RF power and the distance between target and substrate were 2×10-2 Torr, 60 W and 8 cm, respectively. The effects of the Ar–N2 sputtering gas mixture on the structural properties of the films were investigated by using scanning electron microscope, energy-dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction techniques.

Effects of Thermal Annealing on Electrical, Optical and Structural Properties of Ga-Doped ZnO Films

2010 ◽  
Vol 638-642 ◽  
pp. 2891-2896
Author(s):  
P.C. Chang ◽  
K.H. Lee ◽  
A.N. Tu ◽  
S.J. Chang ◽  
K.L. Lee
Keyword(s):  
Structural Properties ◽  
Thermal Annealing ◽  
Carrier Transport ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Zno Films ◽  
Silicon Substrates ◽  
Force Microscopy ◽  
Atomic Force ◽  
Doped Zno

Ga doped ZnO (GZO) films were prepared by radio frequency (rf) magnetron sputtering on glass or silicon substrates. Electrical, optical, and structural properties of these films were analyzed in order to investigate their dependence on thermal annealing temperature. GZO films with a minimum resistivity of 5.2×10-3 Ω-cm annealed at 400°C and a transparency above 80% in visible region were observed. The temperature-dependent conductivity affected the carrier transport and was related to the localization of carriers. The results of transmission spectra were consistent with the results of atomic force microscopy (AFM) scan. X-ray diffraction analysis and electron spectroscopy for chemical analysis were also used to investigate the properties of GZO films.

scholarly journals Surface micromorphology analysis of Cu/Ni nanocomposite thin films by power spectra density and fractal geometry

2020 ◽  
Vol 38 (2) ◽  
pp. 328-333
Author(s):  
Kimia Nikpasand ◽  
Seyed Mohammad Elahi ◽  
Amir Hossein SarI ◽  
Arash Boochani
Keyword(s):  
Rf Sputtering ◽  
Power Spectra ◽  
Morphological Properties ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Power Spectral ◽  
Surface Micromorphology ◽  
Afm Analysis

AbstractCopper (Cu) and nickel (Ni) nanoparticles have been grown simultaneously on glass and silicon substrates by RF sputtering method to form three Cu/Ni nanocomposites at different deposition times. The existence of Cu and Ni peaks in the X-ray diffraction (XRD) profiles confirms the crystalline structure of samples with Cu and Ni atomic content which have also been characterized by Rutherford backscattering (RBS) method. Moreover, the structural and morphological properties of the prepared nanocomposites have been compared with respect to their morphologies by means of atomic force microscopy (AFM) analysis. In order to compare the surface roughness over different spatial frequency ranges and evaluate surface quality, power spectral density (PSD) of each sample has been extracted from AFM data and also, the experimental and theoretical results have been compared. The fractal nature of these nanocomposites has been finally discussed.

Effect of Sputtering Process Parameters on the Thermoelectric Properties of P and N-Type Bi2Te3 Films

2012 ◽  
Vol 185 ◽  
pp. 94-98
Author(s):  
Arina ◽  
Fan Shermin Chow Hui ◽  
Banu Abdul Bari Shamira ◽  
Ai Lin Chia ◽  
Ye Ko San ◽  
...  
Keyword(s):  
Thermoelectric Properties ◽  
Process Parameters ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Characterization Methods ◽  
Force Microscopy ◽  
Atomic Force ◽  
Argon Flow ◽  
P Type

Thermoelectric is an ever evolving field that serves many critical needs (cooling and power generation) in the industry. The key objective of this work is to fabricate Bismuth Telluride (Bi2Te3) thin-films by varying the various process parameters using a radio-frequency (RF) magnetron sputtering disposition technique. Characterization methods such as four point probe resistivity, surface profiler, atomic force microscopy (AFM), X-ray diffraction (XRD), Seebeck coefficient and thermal diffusivity are performed on the N and P-type Bi2Te3films. The samples are analysed for their electrical properties in relation to the evolved microstructures, for how the process parameters of sputtering and annealing affect these changes. The results demonstrate that N-Type film (S2) processed using sputtering parameters of 7mT, 100W, 50sccm of argon flow under room temperature for 30mins with no annealing and the P-Type film processed using sputtering parameters of 7mT, 100W, 60sccm under room temperature for 30mins with institute annealing at 200°C for 2h exhibit desirable thermoelectric properties suitable for cooling application in microelectronic and optoelectronic devices, optimizing their performance and reliability.

Tip Induced Surface Defect migration and Conductivity Studies in Tetragonal, Rhombohedral and Mixed-Phase epitaxial BiFeO3 Thin Films

MRS Advances ◽  
2018 ◽  
Vol 3 (44) ◽  
pp. 2713-2718 ◽  
Author(s):  
M M Saj Mohan ◽  
M V Sreenath ◽  
Ranjith Ramadurai
Keyword(s):  
Room Temperature ◽  
Surface Defect ◽  
Bismuth Ferrite ◽  
Rhombohedral Phase ◽  
Mixed Phase ◽  
Room Temperature Resistivity ◽  
Defect Migration ◽  
Nano Scale ◽  
Atomic Force ◽  
Pure Phases

AbstractBiFeO3 (BFO) is the most studied room temperature multiferroic compound. In this work we demonstrate a template assisted growth process through which the growth strain is controlled to achieve required phase of BFO. Growth of (∼20nm) fully strained tetragonal (T), rhombohedral (R) and mixed phase of T and R of Bismuth ferrite (BiFeO3) was achieved by varying the thickness of the template layer. The different phases were confirmed by using high resolution x-ray diffractions studies. The conductivity map of all the three phases were carried out using an atomic force microscope operating in conductive mode. Tip induced surface defect migration within a given grain was observed in pure phases and the conductivity map confirmed the same. The room temperature resistivity is found to be decreasing systematically from 1.1×106 Ωm , 935×105 Ωm and 1.16×104 Ωm respectively for tetragonal, mixed phase and rhombohedral phase BFO. In the case of mixed phase both the nano- scale and macroscopic leakage current studies show low conductivity, which could be due to the increased pinning sites that increases the energy barrier for the defect migration. The local nano-scale measurements and conductivity mapping corroborates well with the macroscopic studies.

Growth of CuInGaSe2 Films by RF Sputtering Using CuInGaSe2 Single Phase Target

2013 ◽  
Vol 372 ◽  
pp. 571-574
Author(s):  
Kenji Yoshino ◽  
Takahiro Tokuda ◽  
Akira Nagaoka ◽  
Kenichiro Miseki ◽  
Rie Mori ◽  
...  
Keyword(s):  
Room Temperature ◽  
Single Phase ◽  
Rf Sputtering ◽  
Diffraction Peak ◽  
Secondary Phases ◽  
X Ray Diffraction ◽  
High Quality ◽  
Homogeneous Surface ◽  
X Ray

CuIn0.8Ga0.2Se2 thin film is grown at room temperature by RF sputtering using high quality of CuIn0.8Ga0.2Se2 single phase target. A (112) diffraction peak is dominant with no secondary phases such as selenide materials in the X-ray diffraction pattern. A flat and homogeneous surface can be obtained in the sample.

Blue Room-Temperature Photoluminescence of AlN Films, Prepared by RF Magnetron Sputtering

2001 ◽  
Vol 667 ◽  
Author(s):  
V. Ligatchev ◽  
S.F. Yoon ◽  
J. Ahn ◽  
Q. Zhang ◽  
Rusli ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Electron Spectrum ◽  
Room Temperature ◽  
Rf Sputtering ◽  
Photo Luminescence ◽  
Rf Magnetron Sputtering ◽  
Hydrogen Gas ◽  
Gas Mixture ◽  
Structural Studies ◽  
Room Temperature Photoluminescence

ABSTRACTPhoto luminescence (PL) signal from the aluminum nitride (AlN) films, excited by near UV (363.8 nm) laser has been measured at the room temperature. The AlN films are deposited by radio frequency (RF) sputtering of aluminum in argon-nitrogen-hydrogen gas mixture. Positions of the PL peaks maximums are influenced by the AlN preparation regimes. The analysis of the PL data is based on the results of the structural studies and electron spectrum investigations.

SiC Coatings Deposited by RF Magnetron Sputtering

2007 ◽  
Vol 280-283 ◽  
pp. 1309-1312 ◽  
Author(s):  
Hui Dong Tang ◽  
Shou Hong Tan ◽  
Zheng Ren Huang
Keyword(s):  
Surface Roughness ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
Force Microscopy ◽  
Atomic Force ◽  
Amorphous Sic ◽  
Surface Morphologies ◽  
Sic Coatings

Amorphous SiC coatings were deposited by RF magnetron sputtering from a sintered SiC target onto Si(100) substrate at room temperature. The influence of RF power on the surface morphology and the RMS surface roughness of the resulting SiC coatings was studied by using atomic force microscopy. Two types of surface morphologies were obtained. The corresponding forming mechanisms were also discussed.

Correlation of Structural and Optical Properties of nc-Ge/a-Si Multilayers Grown by Ion Beam Sputtering

2011 ◽  
Vol 306-307 ◽  
pp. 1300-1303
Author(s):  
Chao Song ◽  
Rui Huang ◽  
Xiang Wang ◽  
Jie Song ◽  
Yan Qing Guo
Keyword(s):  
Room Temperature ◽  
Volume Fraction ◽  
Ion Beam ◽  
Silicon Substrates ◽  
Ion Beam Sputtering ◽  
Raman Scattering Spectroscopy ◽  
Force Microscopy ◽  
Room Temperature Photoluminescence ◽  
Atomic Force ◽  
Beam Sputtering

The nc-Ge/a-Si multilayer structures were fabricated by ion beam sputtering technique on silicon substrates at temperature of 400 °C. Raman scattering spectroscopy, atomic force microscopy (AFM) and room temperature photoluminescence were used to characterize the structure and optical property of the samples. It was found that the nc-Ge/a-Si multilayer sample can be obtained when the Ge sublayer is 3 nm. The room temperature photoluminescence was observed and the luminescent peak is located at 685 nm. Compared with the a-Ge/a-Si film, the intensity of PL of the nc-Ge/a-Si multilayer film becomes stronger due to the higher volume fraction of crystallized component.

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