Fowler-Nordheim Tunneling Characterization on Poly1-Poly2 Capacitors for the Implementation of Analog Memories in CMOS 0.5 μmTechnology
Keyword(s):
The experimental results of the Fowler-Nordheim characterization using poly1-poly2 capacitors on CMOS ON Semi 0.5 μm technology are presented. This characterization allows the development, design, and characterization of a new current-mode analog nonvolatile memory. Experimental results of the memory cell architecture are presented and demonstrate the usefulness of the proposed architecture.
1995 ◽
Vol 11
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pp. 145-160
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2003 ◽
Vol 16
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pp. 215-219
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2015 ◽
Vol 2015
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pp. 1-10
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2012 ◽
Vol 52
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pp. 1627-1631
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2004 ◽
Vol 43
(No. 12B)
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pp. L1581-L1583
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