Synthesis, Characterization, and Electrical Properties of Poly(azophenyleneazo-2,4-diamino-1,5-phenylenes)

Journal of Polymers ◽

10.1155/2014/594841 ◽

2014 ◽

Vol 2014 ◽

pp. 1-6

Author(s):

A. H. Durgaryan ◽

R. H. Arakelyan ◽

N. A. Durgaran ◽

E. E. Matinyan

Keyword(s):

Electrical Properties ◽

Polymer Chain ◽

Cyclization Reaction ◽

Main Polymer Chain

Poly(azophenyleneazo-2,4-diamino-1,5-phenylenes) were synthesized via diazotization of m- and p-phenylenediamine and azocoupling with m-phenylenediamine. It is found that, simultaneously, dihydrobenztriazolic units were formed as a result of cyclization reaction between amino and azo groups located in ortho position to each other. Oxidation of poly(azo-p-phenyleneazo-2,4-diamino-1,5-phenylene) was carried out and new polymer with benzotriazolic units in the main polymer chain was obtained. The conductivities of obtained polymers doped with iodine were increased with doping levels increase from 10−9–5 × 10−8 S/m to 0,1–0,6 S/m.

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Bisphosphonate units in the main polymer chain: The first synthesis

Journal of Polymer Science Part A Polymer Chemistry ◽

10.1002/pola.26083 ◽

2012 ◽

Vol 50 (15) ◽

pp. 3030-3038 ◽

Cited By ~ 3

Author(s):

Stanislaw Penczek ◽

Krzysztof Kaluzynski ◽

Julia Pretula

Keyword(s):

Polymer Chain ◽

Main Polymer Chain

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Copolymerizations of tetraethyl vinylidene phosphonate. Bisphosphonate units in the main polymer chain. II

Journal of Polymer Science Part A Polymer Chemistry ◽

10.1002/pola.27162 ◽

2014 ◽

Vol 52 (11) ◽

pp. 1614-1621 ◽

Cited By ~ 2

Author(s):

Julia Pretula ◽

Krzysztof Kaluzynski ◽

Stanislaw Penczek

Keyword(s):

Polymer Chain ◽

Main Polymer Chain

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Poly(4-diphenylaminostyrene) with a well-defined polymer chain structure: Controllable optical and electrical properties

Polymer ◽

10.1016/j.polymer.2010.01.054 ◽

2010 ◽

Vol 51 (6) ◽

pp. 1501-1506 ◽

Cited By ~ 13

Author(s):

Itaru Natori ◽

Shizue Natori ◽

Hiroyuki Sekikawa ◽

Tomoyuki Takahashi ◽

Kenji Ogino ◽

...

Keyword(s):

Electrical Properties ◽

Polymer Chain ◽

Chain Structure ◽

Optical And Electrical Properties

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Studies in IVth group organometallic chemistry. VII: Synthesis of some hetero-polymers containing germanium, tin, and lead in the main polymer chain

Recueil des Travaux Chimiques des Pays-Bas ◽

10.1002/recl.19610800605 ◽

1961 ◽

Vol 80 (6) ◽

pp. 623-631 ◽

Cited By ~ 21

Author(s):

J. G. Noltes ◽

G. J. M. van der Kerk

Keyword(s):

Organometallic Chemistry ◽

Polymer Chain ◽

Germanium Tin ◽

Main Polymer Chain

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Synthesis of polyaniline in presence of low magnetic field, its structure and electrical properties

Chemistry & Chemical Technology ◽

10.23939/chcht02.02.105 ◽

2008 ◽

Vol 2 (2) ◽

pp. 105-109

Author(s):

Nafdey Renuka ◽

◽

Kelkar Deepali ◽

Keyword(s):

Magnetic Field ◽

Electrical Conductivity ◽

Electrical Properties ◽

Polymer Chain ◽

Synthesis Process ◽

Structure And Morphology ◽

Low Magnetic Field ◽

Chain Ordering

Polyaniline is synthesized chemically under the influence of low magnetic field of intensity 1KGauss. The effect of magnetic field during the synthesis process causes enhancement of electrical conductivity by two orders of magnitude. This increased electrical conductivity depends on the polymer chain ordering, as well as structure and morphology of the reported polymer.

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In situ TEM measurements of the electrical properties of interface dislocations

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131322 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1338-1339

Author(s):

F. M. Ross ◽

R. Hull ◽

D. Bahnck ◽

J. C. Bean ◽

L. J. Peticolas ◽

...

Keyword(s):

Electrical Properties ◽

Electronic Device ◽

In Situ Tem ◽

Device Performance ◽

Misfit Dislocations ◽

Electrical Characteristics ◽

Strained Layer ◽

Transmission Electron ◽

Interfacial Dislocations

We describe an investigation of the electrical properties of interfacial dislocations in strained layer heterostructures. We have been measuring both the structural and electrical characteristics of strained layer p-n junction diodes simultaneously in a transmission electron microscope, enabling us to correlate changes in the electrical characteristics of a device with the formation of dislocations.The presence of dislocations within an electronic device is known to degrade the device performance. This degradation is of increasing significance in the design and processing of novel strained layer devices which may require layer thicknesses above the critical thickness (hc), where it is energetically favourable for the layers to relax by the formation of misfit dislocations at the strained interfaces. In order to quantify how device performance is affected when relaxation occurs we have therefore been investigating the electrical properties of dislocations at the p-n junction in Si/GeSi diodes.

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The morphologies and electrical properties of indium contacts on (100) cadmium telluride surfaces

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131747 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1422-1423

Author(s):

A.M. Letsoalo ◽

M.E. Lee ◽

E.O. de Neijs

Keyword(s):

Electrical Properties ◽

Cadmium Telluride ◽

Methanol Solution ◽

Electrical Characteristics ◽

Metal Contacts ◽

Deposition Technique ◽

Interfacial Layers ◽

Semiconductor Contacts ◽

Grown Single Crystal ◽

Diamond Abrasive

Semiconductor devices require metal contacts for efficient collection of electrical charge. The physics of these metal/semiconductor contacts assumes perfect, abrupt and continuous interfaces between the layers. However, in practice these layers are neither continuous nor abrupt due to poor nucleation conditions and the formation of interfacial layers. The effects of layer thickness, deposition rate and substrate stoichiometry have been previously reported. In this work we will compare the effects of a single deposition technique and multiple depositions on the morphology of indium layers grown on (100) CdTe substrates. The electrical characteristics and specific resistivities of the indium contacts were measured, and their relationships with indium layer morphologies were established.Semi-insulating (100) CdTe samples were cut from Bridgman grown single crystal ingots. The surface of the as-cut slices were mechanically polished using 5μm, 3μm, 1μm and 0,25μm diamond abrasive respectively. This was followed by two minutes immersion in a 5% bromine-methanol solution.

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Formation of high temperature phase in flash-evaporated SnSe films

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100176629 ◽

1990 ◽

Vol 48 (4) ◽

pp. 698-699

Author(s):

J.P.S. Hanjra

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Energy Gap ◽

Dominant Role ◽

Fine Powder ◽

High Temperature Phase ◽

Temperature Phase ◽

Water Mixture ◽

Flash Evaporation ◽

Photovoltaic Applications

Tin mono selenide (SnSe) with an energy gap of about 1 eV is a potential material for photovoltaic applications. Various authors have studied the structure, electronic and photoelectronic properties of thin films of SnSe grown by various deposition techniques. However, for practical photovoltaic junctions the electrical properties of SnSe films need improvement. We have carried out investigations into the properties of flash evaporated SnSe films. In this paper we report our results on the structure, which plays a dominant role on the electrical properties of thin films by TEM, SEM, and electron diffraction (ED).Thin films of SnSe were deposited by flash evaporation of SnSe fine powder prepared from high purity Sn and Se, onto glass, mica and KCl substrates in a vacuum of 2Ø micro Torr. A 15% HF + 2Ø% HNO3 solution was used to detach SnSe film from the glass and mica substrates whereas the film deposited on KCl substrate was floated over an ethanol water mixture by dissolution of KCl. The floating films were picked up on the grids for their EM analysis.

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