scholarly journals Postdeposition Annealing Effect on Cu2ZnSnS4Thin Films Grown at Different Substrate Temperature

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Samia Ahmed Nadi ◽  
Puvaneswaran Chelvanathan ◽  
Zaihasraf Zakaria ◽  
Mohammad Mezbaul Alam ◽  
Zeid A. Alothman ◽  
...  

Cu2ZnSnS4(CZTS) thin films were deposited on top of Molybdenum (Mo) coated soda lime glass (SLG) substrates using a single target rf magnetron sputtering technique. The sputtering parameters such as base pressure, working pressure, rf power, argon (Ar) gas flow rate, and deposition time were kept consistent throughout the experiment. The effect of different substrate temperatures, for example, room temperature (RT), 300°C, 350°C, 370°C, 400°C, and 450°C, was analyzed by studying their structural, electrical, and optical properties. As-sputtered films were then annealed at 460°C. X-ray diffraction (XRD) measurement revealed the structure to be kesterite with peak of (112) plane in both annealed and as-sputtered CZTS thin films. The crystallinity of the films improved with the increasing substrate temperature until 370°C. Secondary phases of MoS2,CuxMoSx,CuxSnSx,CuxS, and Cu6MoSnS8(hemusite) were also observed in the annealed CZTS films. Scanning electron microscopy (SEM) shows crystallite size of deposited CZTS thin film to be proportionally related to deposition temperature. The highest surface roughness of 67.318 nm is observed by atomic force microscopy (AFM). The conductivity type of the films was found to be p-type by Hall effect measurement system.

2017 ◽  
Vol 2 (1) ◽  
pp. 54-59 ◽  
Author(s):  
Shih-Fan Chen ◽  
Shea-Jue Wang ◽  
Win-Der Lee ◽  
Ming-Hong Chen ◽  
Chao-Nan Wei ◽  
...  

The back contact electrode with molybdenum (Mo) thin film is crucial to the performance of Cu(In, Ga)Se2 solar cells. In this research, Mo thin films were fabricated by direct current sputtering to attain low-resistivity molybdenum films on soda-lime glass substrates with good adhesion. The films were sputtered onto substrates in 500 nm thickness and nominally held at room temperature with deposition conditions of power and working pressure. Low resistivity (17-25 μΩ∙cm) of bi-layer molybdenum thin films were achieved with combination of top layer films deposited at 300 W with different working pressure, and bottom fixing layer film deposited at 300 W with 2.5 mTorr which adhered well on glass. Films were characterized the electrical properties, structure, residual stress, morphology by using the Hall-effect Measurement, X-ray Diffraction, and Field-Emission Scanning Electron Microscopy, respectively, to optimize the deposition conditions.


2002 ◽  
Vol 721 ◽  
Author(s):  
P. Kuppusami ◽  
K. Diesner ◽  
I. Sieber ◽  
K. Ellmer

AbstractSputtering of aluminium doped zinc oxide thin films from a ceramic ZnO:Al target requires a controlled addition of oxygen to the sputtering atmosphere in order to obtain films with low resistivity and high transparency. In this paper the influence of the oxygen addition and of the substrate temperature on the structural, morphological and electrical properties of ZnO:Al films is investigated. The oxygen addition leads to a minimum resistivity when the oxygen content during sputtering is 0.2%. This small amount of oxygen not only improves the transparency of the films, it also induces to a significant grain growth as revealed by scanning electron microscopy. A further increase of the oxygen content leads to highly resistive films, due to a complete oxidation of the dopant Al. As expected, higher substrate temperatures from about 373 to 673 K improve the of crystallinity and hence the resistivity. The lowest resistivity achieved was about 1.2.10-3 Ωcm. At still higher temperatures the resistivity increases which seems to be due to an outdiffusion of sodium into the ZnO:Al films from the soda lime glass, compensating part of the donors.


2005 ◽  
Vol 866 ◽  
Author(s):  
Sang-Hoon Shin ◽  
Sung-Dae Kim ◽  
Jong-Ha Moon ◽  
Jin Hyeok Kim

AbstractEr3+/Pr3+ co-doped soda-lime glass thin films have been fabricated using RF magnetron sputtering method and their structural and optical properties have been studied. Deposition rate, crystallinity, and composition of glass thin films were investigated by scanning electron microscopy, transmission electron microscopy, and electron probe micro area analysis. Refractive index, birefringence and binding characteristics have been investigated using a prism coupler and x-ray photoelectron spectroscopy. Er3+/Pr3+ co-doped soda lime glass thin films were prepared by changing substrate temperature (room temp.∼550 ), RF power (90W∼150W), and Ar/O2 gas flow ratio at processing pressure of 4mTorr. Glass thin films could be obtained at the optimized processing condition at 350, RF power (130W), and gas flow (Ar:O2=40:0) with maximum deposition rate of 1.6νm/h. Refractive index increased from 1.5614 to 1.5838 and birefringence increased from 0.000154 to 0.000552 as the content of Pr3+ increased. Binding energy of Pr3d increased as the content of Pr3+ increased.


1995 ◽  
Vol 388 ◽  
Author(s):  
Yoshihisa Watanabe ◽  
Yoshikazu Nakamura ◽  
Shigekazu Hirayama ◽  
Yuusaku Naota

AbstractAluminum nitride (AlN) thin films have been synthesized by ion-beam assisted deposition method. Film deposition has been performed on the substrates of silicon single crystal, soda-lime glass and alumin A. the influence of the substrate roughness on the film roughness is studied. the substrate temperature has been kept at room temperature and 473K and the kinetic energy of the incident nitrogen ion beam and the deposition rate have been fixed to 0.5 keV and 0.07 nm/s, respectively. the microstructure of the synthesized films has been examined by X-ray diffraction (XRD) and the surface morphology has been observed by atomic force microscopy(AFM). IN the XRD patterns of films synthesized at both room temperature and 473K, the diffraction line indicating the alN (10*0) can be discerned and the broad peak composed of two lines indicating the a1N (00*2) and a1N (10*1) planes is also observed. aFM observations for 100 nm films reveal that (1) the surface of the films synthesized on the silicon single crystal and soda-lime glass substrates is uniform and smooth on the nanometer scale, (2) the average roughness of the films synthesized on the alumina substrate is similar to that of the substrate, suggesting the evaluation of the average roughness of the film itself is difficult in the case of the rough substrate, and (3) the average roughness increases with increasing the substrate temperature.


2013 ◽  
Vol 291-294 ◽  
pp. 703-707
Author(s):  
Gui Shan Liu ◽  
Hao Na Li ◽  
Xiao Yue Shen ◽  
Zhi Qiang Hu ◽  
Hong Shun Hao

CIGS thin films were deposited on soda lime glass by one-step magnetron sputtering using a single quaternary-CIGS target in stoichiometric proportions. The influences of substrate temperature on the structural, optical, and electrical properties of Cu(In,Ga)Se2 (CIGS) thin films were investigated. The phase structure of CIGS thin films was characterized by X-ray diffraction (XRD). The morphology and thickness of CIGS thin films were observed by Scanning Electron Microscope (SEM). The absorption coefficient of CIGS thin films was measured by Ultraviolet-visible Spectrophotometer. Four-point probe method was used to test the resistivity of CIGS thin films. Based on the results of characterization, the increase in crystallite size of CIGS was found to be significantly noticeable with increasing substrate temperature. UV-vis measurement analysis suggested that CIGS thin films deposited at different substrate temperatures had high absorption coefficient (~104 cm-1) and optical band gap (1.07-1.23 eV). The substrate temperature dependence of the resistivity of the films indicated that the resistivity of the films fall to about 0.5 Ω۰cm as the substrate glass was heated up to 300 °C.


2008 ◽  
Vol 1123 ◽  
Author(s):  
Shou-Yi Kuo ◽  
Liann-Be Chang ◽  
Ming-Jer Jeng ◽  
Wei-Ting Lin ◽  
Yong-Tian Lu ◽  
...  

AbstractThis work reports on the fabrication and characterization of Mo thin films on soda-lime glass substrate grown by reactive RF magnetron sputtering. Film thickness was measured by x-ray step surface profiler. The structural properties and surface morphology were analyzed by x-ray diffraction (XRD), atomic force microscope (AFM) and scanning electron microscopy (SEM). Electrical properties were measured by four-point probe. It was found that the growth parameters, such as argon flow rate, RF power, film thickness, have significant influences on properties of Mo films. The strain on films revealed the complicated relationship with the working pressure, which might be associated with micro structures and impurities. In order to improve the adhesion and electricity, we adopted a two-pressure deposition scheme. The optimal thickness and sheet resistance are νm and 0.12 ω The mechanisms therein will be discussed in detail. Furthermore, we also investigated the diffusion property of Na ion of double Mo films sputtered on soda-lime glass. Our experimental results could lead to better understanding for improving further CIGS-based photovoltaic devices.


2014 ◽  
Vol 787 ◽  
pp. 31-34 ◽  
Author(s):  
Jian Sheng Wang ◽  
Song Li ◽  
Jia Jia Cai ◽  
Yu Ping Ren ◽  
Gao Wu Qin

Cu2ZnSnS4thin films were fabricated by one-step RF magnetron sputtering of a single quaternary Cu2ZnSnS4(CZTS) chalcogenide target on Mo/soda lime glass substrate, followed by post sulfurization using S vapor obtained from elemental S powders. The films were thermally annealed in Ar atmosphere to improve the crytallinity. The sulfurization temperature was fixed at 550°C. Both as-deposited and post-sulfured samples are close to the stoichiometric composition, meanwhile without any second phase was detected by XRD. As-deposited film has a compact columnar grain characteristic. Although crystallinity was improved with increasing annealing time, this characteristic disappeared after post-sulfured.


2019 ◽  
Vol 60 (5) ◽  
pp. 1006-1012
Author(s):  
Ali H A Jalaukhan ◽  
Mustafa M A Hussein

Fullerene thin films of about 200 nm thicknesses have been deposited by thermal evaporation method on soda lime glass at substrate temperature 303 and 403K under pressure about 10-5 mbar. This study concentrated on the influence of substrate temperature on the optical properties of C60 thin films within the visible range. Optical characterization has been carried out at room temperature using the absorption spectra, at normal incidence, in range (200-900) nm. The absorption and extinction coefficients of the samples have been evaluated according to the variation in the UV- Visible spectrum. Increasing substrate temperature causes decreasing in optical band gap energy, for direct allowed transitions, and slightly changing in refractive index. This incident was due to the reducing of interatomic intervals, which may be correlating a decrease in the amplitude of atomic vibrations around their equilibrium sites.


2019 ◽  
Vol 70 (7) ◽  
pp. 127-131
Author(s):  
Maria Toma ◽  
Nicolae Ursulean ◽  
Daniel Marconi ◽  
Aurel Pop

Abstract Cu doped transparent ZnO thin films (CZO) were sputtered on soda lime glass substrates at three different distances between substrate and target. The effects of copper doping on the structural and optical properties were investigated by X-ray diffraction (XRD) and transmittance measurements. The XRD results indicated that CZO thin films have a preferential crystallographic orientation along the hexagonal wurtzite (002) axis. With increasing the distance between substrate-target, from 4 cm to 8 cm, the refractive index of the CZO films decreased. In the visible wavelength region, the average value of the transmittance was above 80%. Thus, significant changes in the structural and optical properties have occurred due to the decrease of the distance between the target-substrate and the residual compressive stress at the film-substrate interface arising during deposition.


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