scholarly journals Appraisal on Textured Grain Growth and Photoconductivity of ZnO Thin Film SILAR

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Deepu Thomas ◽  
Sunil C. Vattappalam ◽  
Sunny Mathew ◽  
Simon Augustine
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Growth ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
Silar Method ◽  
X Ray ◽  
Good Crystallinity ◽  
Layer Adsorption

ZnO thin films were prepared by successive ionic layer adsorption reaction (SILAR) method. The textured grain growth along c-axis in pure ZnO thin films and doped with Sn was studied. The structural analysis of the thin films was done by X-ray diffraction and surface morphology by scanning electron microscopy. Textured grain growth of the samples was measured by comparing the peak intensities. Textured grain growth and photo current in ZnO thin films were found to be enhanced by doping with Sn. ZnO thin film having good crystallinity with preferential (002) orientation is a semiconductor with photonic properties of potential benefit to biophotonics. From energy dispersive X-ray analysis, it is inferred that oxygen vacancy creation is responsible for the enhanced textured grain growth in ZnO thin films.

Electrical Properties Dependence on Substrate Temperature of Sputtered ZnO Nanoparticles Thin Films on Teflon Substrates

2013 ◽  
Vol 795 ◽  
pp. 403-406 ◽  
Author(s):  
Nur Sa’adah Muhamad Sauki ◽  
Sukreen Hana Herman ◽  
Mohd Hanafi Ani ◽  
Mohamad Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Substrate Temperature ◽  
Rf Magnetron Sputtering ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage

Zinc oxide (ZnO) thin films were deposited on teflon substrates by RF magnetron sputtering at different substrate temperature. The effect of substrate temperature on ZnO thin films electrical and structural properties were examined using current-voltage (I-V) measurement, and x-ray diffraction (XRD) It was found that the electrical conductivity and resistivity of the ZnO thin film deposited at 40°C was the highest and lowest intensity accordingly. This was supported by the crystalline quality of the films from the x-ray diffraction (XRD) results. The XRD pattern showed that the ZnO thin film deposited at 40°C has the highest intensity with the narrowest full-width-at-half-maximum indicating that the film has the highest quality compared to other thin film.

scholarly journals Sensing of Ethanol with Nanosize Fe-ZnO Thin Films

2009 ◽  
Vol 2009 ◽  
pp. 1-3 ◽  
Author(s):  
G.-H. Kuo ◽  
H. Paul Wang ◽  
H. H. Hsu ◽  
James Wang ◽  
Y. M. Chiu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Sensitivity ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
X Ray ◽  
Main Compound ◽  
Doped Zno ◽  
Very High

Sensing of ethanol with iron doped ZnO (Fe-ZnO) thin films has been studied in this work. By X-ray diffraction spectroscopy, it is found that ZnO is the main compound in the low-iron (<10%) doped ZnO thin films.ZnFe2O4is also found as 20–50% of iron are doped on the thin films. The 5% Fe-ZnO thin film has a very high sensitivity (Rair/Rethanol>70) to 1000 ppm of ethanol at 300 K. It seems that iron can promote the sensivity of the ZnO thin film. The thin film doped with a greater amount (20–50%) of iron has, however, a much less sensitivity (<15) to ethanol. The chemical interactions between oxygen of ethanol and zinc on the Fe-ZnO thin film cause changes of the bond distances of Zn–O and Fe–O in the thin films to 1.90 and 1.98 Å which can be restored to 1.91 and 1.97 Å, respectively, in the absence of ethanol.

scholarly journals Influence of annealing and optical aging on optical and structural properties of ZnO thin films obtained by SILAR method

2018 ◽  
Vol 57 (4) ◽  
Author(s):  
Çağlar Duman ◽  
Harun Güney
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Tin Oxide ◽  
Uv Light ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Silar Method ◽  
X Ray ◽  
Layer Adsorption ◽  
Absorption Measurements

In this study, zinc oxide (ZnO) thin films are deposited on fluorine doped tin oxide (FTO) substrates by using a successive ionic layer adsorption and reaction (SILAR) method. One of the samples is not annealed and others are annealed at 200, 400 and 600 °C, and all the samples are aged under ultraviolet (UV) light for 19 h. These samples are used to investigate the effect of annealing and aging on the properties of ZnO. Structural properties of the ZnO thin films are examined with scanning electron microscopy (SEM) and X-ray diffraction (XRD). Photoluminescence, transmittance and absorption measurements are used to observe the optical properties of the films. In the literature, there is no study investigating the effect of aging on ZnO thin films deposited with the SILAR method, hence this study fills the gap in the literature.

Structural and Optical Properties of Mn-Doped ZnO Thin Films Prepared by SILAR Method

2017 ◽  
Vol 73 ◽  
pp. 22-30
Author(s):  
Marimuthu Karunakaran ◽  
S. Maheswari ◽  
Kasinathan Kasirajan ◽  
Sivaji Dinesh Raj ◽  
Rathinam Chandramohan
Keyword(s):  
Thin Films ◽  
Xrd Analysis ◽  
Layer Growth ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Silar Method ◽  
X Ray ◽  
Glass Substrates ◽  
Mn Doped

The growth of highly textured Mn doped Zinc oxide (ZnO) thin films with a preferred (002) orientation has been reported by employing successive ionic layer growth by adsorption reaction (SILAR) using a sodium zincate bath on glass substrates has been reported. The prepared films were characterized by X-ray diffraction (XRD), optical spectroscopy and scanning electron microscopy (SEM) measurement. The XRD analysis reveals that the films were polycrystalline. Morphology of the films was found to be uniform with smaller grains and exhibits a structure with porous. The calculated Band gap value was found to be 3.21 eV prepared at 15 mM MnSO4 concentration.

Structural and Optical Properties of (Al, Co) Codoped-ZnO Thin Film

2014 ◽  
Vol 941-944 ◽  
pp. 1302-1305
Author(s):  
Ping Cao ◽  
Yue Bai ◽  
Zhi Qu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Sol Gel ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Al Doping ◽  
X Ray ◽  
Uv Emission

Zn0.99-xCo0.01AlxO (x=0, 0.01,) thin films have been prepared by a sol-gel method. The structural and optical properties of the samples were investigated. X-ray diffraction and EDX spectrum indicate that Al3+ and Co2+ substitute for Zn2+ without changing the wurtzite structure. With the Al doping,the intensity ratio of the visible to UV emission increases, which is attributed to the increase of O vacancies and Zn interstitials .

Effects of Working Pressure on the Microstructure and Properties of ZnO Thin Films Prepared by DC Magnetron Sputtering

2012 ◽  
Vol 503-504 ◽  
pp. 692-695
Author(s):  
Fei Gao ◽  
Xiao Yan Liu ◽  
Li Yun Zheng ◽  
Mei Xia Li ◽  
Rui Jiao Jiang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Diffraction Peak ◽  
Zno Thin Films ◽  
Zno Thin Film ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Working Pressure ◽  
X Ray ◽  
Orientation Growth

ZnO thin films were prepared by DC magnetron sputtering. The effects working pressures on the microstructure, optical properties and the photoluminescent properties were studied. The results show that ZnO thin films were successfully prepared with preferred orientation growth, showing structure of single crystal. The transmission of all the ZnO thin films kept above 85%. With increasing the working pressure, the surface of ZnO thin film became coarse, the intensity of X-ray diffraction peak decreased and the transmission of the film decreased and then increased. The intensity of the two photoluminescence peak of ZnO thin films one ultraviolet peak at 400 nm and one blue peak at 466 nm increased with increasing the working pressure. The ultraviolet peak was originated from the transition emission of the electrons from the conduction band to the valence band while the blue peak was originated from the defects in ZnO thin films.

scholarly journals Production of ZnO and CdO-ZnO thin Films by Extraction–Pyrolytic Method

2016 ◽  
Vol 53 (3) ◽  
pp. 57-66
Author(s):  
A. Cvetkovs ◽  
O. Kiselova ◽  
U. Rogulis ◽  
V. Serga ◽  
R. Ignatans
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Quartz Glass ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Average Size

Abstract The extraction-pyrolytic method has been applied to produce the ZnO and CdO-ZnO thin films on glass and quartz glass substrates. According to X-ray diffraction measurements, the ZnO and CdO phases have been produced with an average size of crystallites about 8–42 nm in the films. The thickness of the layers measured by a profilometer has been up to 150 nm. The surface morphology measurements show that the surface of the films may be rough and non-continuous. The SEM results confirm the dependence between the preparation procedure and the quality of the thin film.

Palladium Nanowire Thin Films via Template Growth

2003 ◽  
Vol 775 ◽  
Author(s):  
Donghai Wang ◽  
David T. Johnson ◽  
Byron F. McCaughey ◽  
J. Eric Hampsey ◽  
Jibao He ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Conductive Substrate ◽  
Palladium Nanowires ◽  
Efficient Route ◽  
Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

Chemical synthesis and study of structural and optoelectronic properties of CdS thin films: Effect of SILAR growth cycles

2015 ◽  
Vol 9 (3) ◽  
pp. 2461-2469
Author(s):  
S. R. Gosavi ◽  
K. B. Chaudhari
Keyword(s):  
Thin Films ◽  
Average Crystallite Size ◽  
X Ray Diffraction ◽  
Silar Method ◽  
Growth Cycles ◽  
Glass Substrates ◽  
Layer Adsorption ◽  
Cds Thin Films ◽  
Structural And Optoelectronic Properties ◽  
Deposited Film

CdS thin films were deposited on glass substrates by using successive ionic layer adsorption and reaction (SILAR) method at room temperature. The effect of SILAR growth cycles on structural, morphological, optical and electrical properties of the films has been studied.  The thickness of the deposited film is measured by employing weight difference method. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) studies showed that all the films exhibit polycrystalline nature and are covered well with glass substrates. The values of average crystallite size were found to be 53 nm, 58 nm, 63 nm and 71 nm corresponding to the thin films deposited with 30, 40, 50 and 60 SILAR growth cycles respectively. From the UV–VIS spectra of the deposited thin films, it was seen that both the absorption properties and energy bandgap of the films changes with increasing number of SILAR growth cycles. A decrease of electrical resistivity has been observed with increasing SILAR growth cycle. 

scholarly journals Effects of Thermal Annealing on the Characteristics of High Frequency FBAR Devices

Coatings ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 397
Author(s):  
Yu-Chen Chang ◽  
Ying-Chung Chen ◽  
Bing-Rui Li ◽  
Wei-Che Shih ◽  
Jyun-Min Lin ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thermal Annealing ◽  
Electromechanical Coupling ◽  
Zno Thin Films ◽  
Electromechanical Coupling Coefficient ◽  
Back Side ◽  
Zno Thin Film ◽  
Frequency Responses ◽  
Sputtering System

In this study, piezoelectric zinc oxide (ZnO) thin film was deposited on the Pt/Ti/SiNx/Si substrate to construct the FBAR device. The Pt/Ti multilayers were deposited on SiNx/Si as the bottom electrode and the Al thin film was deposited on the ZnO piezoelectric layer as the top electrode by a DC sputtering system. The ZnO thin film was deposited onto the Pt thin film by a radio frequency (RF) magnetron sputtering system. The cavity on back side for acoustic reflection of the FBAR device was achieved by KOH solution and reactive ion etching (RIE) processes. The crystalline structures and surface morphologies of the films were analyzed by X-ray diffraction (XRD) and field emission scanning electron microscope (FE-SEM). The optimized as-deposited ZnO thin films with preferred (002)-orientation were obtained under the sputtering power of 80 W and sputtering pressure of 20 mTorr. The crystalline characteristics of ZnO thin films and the frequency responses of the FBAR devices can be improved by using the rapid thermal annealing (RTA) process. The optimized annealing temperature and annealing time are 400 °C and 10 min, respectively. Finally, the FBAR devices with structure of Al/ZnO/Pt/Ti/SiNx/Si were fabricated. The frequency responses showed that the return loss of the FBAR device with RTA annealing was improved from −24.07 to −34.66 dB, and the electromechanical coupling coefficient (kt2) was improved from 1.73% to 3.02% with the resonance frequency of around 3.4 GHz.

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