scholarly journals High-Efficient Circuits for Ternary Addition

VLSI Design ◽  
2014 ◽  
Vol 2014 ◽  
pp. 1-15 ◽  
Author(s):  
Reza Faghih Mirzaee ◽  
Keivan Navi ◽  
Nader Bagherzadeh
Keyword(s):  
Carbon Nanotube ◽  
Power Dissipation ◽  
Field Effect ◽  
Field Effect Transistors ◽  
The Novel ◽  
Ternary Addition ◽  
Practical Applications ◽  
High Efficient ◽  
Static Power ◽  
The One

New ternary adders, which are fundamental components of ternary addition, are presented in this paper. They are on the basis of a logic style which mostly generates binary signals. Therefore, static power dissipation reaches its minimum extent. Extensive different analyses are carried out to examine how efficient the new designs are. For instance, the ternary ripple adder constructed by the proposed ternary half and full adders consumes 2.33 μW less power than the one implemented by the previous adder cells. It is almost twice faster as well. Due to their unique superior characteristics for ternary circuitry, carbon nanotube field-effect transistors are used to form the novel circuits, which are entirely suitable for practical applications.

scholarly journals SIMULATION AND ANALYSIS OF 3T AND 4T CNTFET DRAM DESIGN IN 32nm TECHNOLOGY

2014 ◽  
pp. 53-59
Author(s):  
N. SOMORJIT SINGH ◽  
DR.M. MADHESWARAN
Keyword(s):  
Carbon Nanotube ◽  
Power Dissipation ◽  
Delay Time ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Leakage Power ◽  
Memory Cells ◽  
Time Dynamic

Carbon Nanotube Field Effect Transistors (CNTFETs) is a promising device alternative for future nanometersscale technology. This paper presents 3TCNTFET & 4TCNTFET simulation and analysis of DRAM with metallic CNTFET using a CNTFET SPICE(HSPICE) model with 32ns technology have shown the DRAM cells in terms of leakage power, power dissipation, delay time, dynamic write and read power. Here, comparison between 4TDRAM and 3TDRAM memory cells is also shown which 3TDRAM has better performance in power dissipation and leakage power than 4TDRAM cell, but less delay in 4TDRAM.

Effects of Temperature Dependence of Energy Bandgap on I–V Characteristics in CNTFETs Models

2017 ◽  
Vol 16 (05n06) ◽  
pp. 1750009 ◽  
Author(s):  
R. Marani ◽  
A. G. Perri
Keyword(s):  
Carbon Nanotube ◽  
Temperature Dependence ◽  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Energy Bandgap ◽  
Different Temperatures ◽  
Transistor Model ◽  
Effects Of Temperature ◽  
The One

In this paper, we analyze the effects of temperature dependence of energy bandgap on [Formula: see text] characteristics in some carbon nanotube field effect transistors (CNTFETs) models proposed in literature in order to identify the one more suitable for computer aided design (CAD) applications. At first we consider a compact, semi-empirical model, already proposed by us, performing [Formula: see text] characteristic simulations at different temperatures. Our results are compared with those obtained with the Stanford-Source virtual carbon nanotube field-effect transistor model (VS-CNFET), obtaining [Formula: see text] characteristics comparable, but with lower CPU calculation time.

scholarly journals Unique Characteristics of Vertical Carbon Nanotube Field-effect Transistors on Silicon

2014 ◽  
Vol 6 (3) ◽  
pp. 287-292 ◽  
Author(s):  
Jingqi Li ◽  
Weisheng Yue ◽  
Zaibing Guo ◽  
Yang Yang ◽  
Xianbin Wang ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors

A compact current-voltage model for carbon nanotube field effect transistors

2008 ◽  
Author(s):  
Hadi Hosseinzadegan ◽  
Hossein Aghababa ◽  
Mahmoud Zangeneh ◽  
Ali Afzali-kusha ◽  
Behjat Forouzandeh
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Current Voltage
Sign in / Sign up

Export Citation Format

Share Document