scholarly journals Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15Film

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Jian-Yang Lin ◽  
Chia-Lin Wu
Keyword(s):  
Thin Films ◽  
Random Access ◽  
Rf Magnetron Sputtering ◽  
Resistive Random Access Memory ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Bipolar Switching ◽  
Ito Glass ◽  
Switching Characteristics ◽  
Surface Morphologies

The electrical conduction and bipolar switching properties of resistive random access memory (RRAM) cells with transparent calcium bismuth titanate (CaBi4Ti4O15—CBTi144) thin films were investigated. Experimentally, the (119)-oriented CBTi144 thin films were deposited onto the ITO/glass substrates by RF magnetron sputtering followed by rapid thermal annealing (RTA) at a temperature range of 450–550°C. The surface morphologies and crystal structures of the CBTi144 thin films were examined by using field-emission scanning electron microscopy and X-ray diffraction measurements. The on/off ratio and switching behaviors of the transparent Al/CBTi144/ITO/glass RRAM devices were further discussed in this work.

Crystallinity and Characterization of Rf-Magetron Sputtered ZnO-Doped (Zr0.8Sn0.2)TiO4 Thin Films on ITO/Glass Substrate

2012 ◽  
Vol 486 ◽  
pp. 345-349
Author(s):  
Cheng Hsing Hsu ◽  
Pai Chuan Yang ◽  
Wen Shiush Chen ◽  
Jenn Sen Lin
Keyword(s):  
Thin Films ◽  
Visible Region ◽  
Morphological Characteristics ◽  
Rf Magnetron Sputtering ◽  
Optical Transmittance ◽  
Dissipation Factor ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Atomic Force ◽  
Ito Glass

Microstructure, optical and electrical properties of ZnO-doped (Zr0.8Sn0.2)TiO4 thin films prepared by rf magnetron sputtering on ITO/Glass substrates at different argon-oxygen (Ar/O2) mixture have been investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the Ar/O2 ratio. Optical transmittance spectroscopy further revealed high transparency (over 70%) in the visible region of the spectrum. At an Ar/O2 ratio of 100/0 and a substrate temperature of 400°C, the ZnO-doped (Zr0.8Sn0.2)TiO2 films possess a dielectric constant of 44 at 10 MHz, a dissipation factor of 0.03 at 10 MHz, a leakage current density of 3.73×10-9 A/cm2.

Microstructural, Optical and Electrical Properties Of Post-Annealed ZnO:Al Thin Films

2012 ◽  
Vol 1394 ◽  
Author(s):  
Coralie Charpentier ◽  
Patricia Prod’Homme ◽  
Loïc Francke ◽  
Pere Roca i Cabarrocas
Keyword(s):  
Thin Films ◽  
Vacuum Annealing ◽  
Microstructural Analysis ◽  
Rf Magnetron Sputtering ◽  
Charge Carrier Concentration ◽  
Gas Mixture ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Aluminum Doped Zinc Oxide ◽  
Concentration Limits

ABSTRACTAluminum-doped zinc oxide (ZnO:Al) thin films were prepared on glass substrates by radio frequency (RF) magnetron sputtering from a ceramic mixed target ZnO:Al2O3 (1 wt.%) with a power of 250 W. Two series of samples were deposited at room temperature, the first one in pure Ar atmosphere, the second one in Ar/O2 gas mixture. Effects of post-deposition annealing treatments carried out from 400 °C to 500 °C under vacuum and in N2/H2 (5%) atmosphere have been investigated. The influence of these parameters was studied by a detailed microstructural analysis using X-Ray diffraction and Raman spectroscopy. For N2/H2 annealing process, the increase of charge carrier concentration limits the increase of the mobility while after vacuum annealing, an improvement of both electrical and optical properties was observed. The increase of the crystallinity and grain size for ZnO:Al films deposited in Ar/O2 gas mixture could explain their improvements. Resistivity was reduced down to 3.5×10-4 Ω.cm, for a mobility of 49 cm2/V.s with a vacuum annealing at 450 °C for ZnO:Al deposited in Ar/O2 gas mixture.

Microstructural and Properties of P-type Nickel Oxide (NiO) Thin Films Deposited by RF Magnetron Sputtering

2018 ◽  
Vol 24 (8) ◽  
pp. 5866-5871 ◽  
Author(s):  
G Balakrishnan ◽  
J. S. Ram Vinoba ◽  
R Rishaban ◽  
S Nathiya ◽  
O. S. Nirmal Ghosh
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Nickel Oxide ◽  
High Mobility ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Type Semiconductor ◽  
P Type ◽  
Nio Films

Nickel oxide (NiO) thin films were deposited on glass substrates using the RF magnetron sputtering technique at room temperature. The Argon and oxygen flow rates were kept constant at 10 sccm and 5 sccm respectively. The films were annealed at various temperatures (RT-300 °C) and its influence on the microstructural, optical and electrical properties were investigated. The X-ray diffraction (XRD) investigation of NiO films indicated the polycrystallinity of the films with the (111), (200) and (220) reflections corresponding to the cubic structure of NiO films. The crystallite size of NiO films was in the range ~4–14 nm. The transmittance of the films increased from 20 to 75% with increasing annealed temperature. The optical band gap of the films was 3.6–3.75 eV range for the as-deposited and annealed films. The Hall effect studies indicated the p-type conductivity of films and the film annealed at 300 °C showed higher carrier concentration (N), high conductivity (σ) and high mobility (μ) compared to other films. These NiO films can be used as a P-type semiconductor material in the devices require transparent conducting films.

Electrodeposition and Properties of CuInS2 Thin Films

2013 ◽  
Vol 690-693 ◽  
pp. 1659-1663
Author(s):  
Hai Fang Zhou ◽  
Xiao Hu Chen
Keyword(s):  
Thin Films ◽  
Photocurrent Density ◽  
Enhancement Effect ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
Ito Glass ◽  
Type Semiconductor ◽  
One Step ◽  
P Type

The preparation and characterization of CuInS2 thin films on ITO glass substrates prepared by one-step electrodeposition have been reported. Samples were characterized using X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDX) and scanning electron microscopy (SEM). The results indicate that CuInS2 is the major phase for the film deposited at -1.0 V, after annealing at 550°C in sulfur atmosphere, and the sample is Cu-rich and p-type semiconductor. Additionally, the energy band gap and carrier concentration for the sample were found to be 1.43 eV and 4.20×1017 cm−3, respectively. Furthermore, the maximum photocurrent density of the sample was found to be -1.15 mA/cm2 under 255 lx illumination, the sample shows the photo-enhancement effect.

scholarly journals NO2 Sensing Properties of WO3 Thin Films Deposited by Rf-Magnetron Sputtering

2014 ◽  
Vol 2014 ◽  
pp. 1-5
Author(s):  
Savita Sharma ◽  
Monika Tomar ◽  
Nitin K. Puri ◽  
Vinay Gupta
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Gas Sensing ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Sensing Properties ◽  
Glass Substrates ◽  
Corning Glass ◽  
Interdigital Electrodes ◽  
Wo3 Thin Films

Tungsten trioxide (WO3) thin films were deposited by Rf-magnetron sputtering onto Pt interdigital electrodes fabricated on corning glass substrates. NO2 gas sensing properties of the prepared WO3 thin films were investigated by incorporation of catalysts (Sn, Zn, and Pt) in the form of nanoclusters. The structural and optical properties of the deposited WO3 thin films have been studied by X-ray diffraction (XRD) and UV-Visible spectroscopy, respectively. The gas sensing characteristics of all the prepared sensor structures were studied towards 5 ppm of NO2 gas. The maximum sensing response of about 238 was observed for WO3 film having Sn catalyst at a comparatively lower operating temperature of 200°C. The possible sensing mechanism has been highlighted to support the obtained results.

Growth of the Sol-Gel Based ZnO:Al Thin Films with High Doping Concentration

2012 ◽  
Vol 485 ◽  
pp. 144-148
Author(s):  
Jian Lin Chen ◽  
Yan Jie Ren ◽  
Jian Chen ◽  
Jian Jun He ◽  
Ding Chen
Keyword(s):  
Thin Films ◽  
Doping Concentration ◽  
Sol Gel ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Glass Substrates ◽  
High Doping Concentration ◽  
Doped Zno ◽  
Surface Morphologies

Preferentially oriented Al-doped ZnO thin films with doping concentration of 1, 2, 3, 5 and 10 mol% respectively were prepared on glass substrates via sol-gel route. The crystallinity of films was characterized by X-ray diffraction and the surface morphologies were observed by scanning electron microscopy. The results show that ZnO:Al films at low doping concentration (1, 2 mol%) grow into dense homogenous microstructure. However, as for high doping concentration (3, 5, 10 mol%), Al3+ precipitate in the form of amorphous Al2O3 and ZnO:Al films exhibit heterogeneous nucleation and exceptional growth of the big plate-like crystals at the interface of the amorphous Al2O3 and ZnO:Al matrix.

Electrical and Optical Properties of ZnO-Doped Zr0.8Sn0.2TiO4 Thin Films on ITO/Glass Substrates by RF Magnetron Sputtering

2011 ◽  
Vol 687 ◽  
pp. 70-74
Author(s):  
Cheng Hsing Hsu ◽  
His Wen Yang ◽  
Jenn Sen Lin
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Visible Region ◽  
Rf Magnetron Sputtering ◽  
Rf Power ◽  
Electrical And Optical Properties ◽  
Glass Substrates ◽  
Ito Glass

Electrical and optical properties of 1wt% ZnO-doped (Zr0.8Sn0.2)TiO4thin films prepared by rf magnetron sputtering on ITO/Glass substrates at different rf power and substrate temperature were investigated. The surface structural and morphological characteristics analyzed by X-ray diffraction (XRD) and atomic force microscope (AFM) were found to be sensitive to the deposition conditions, such as rf power and substrate temperature. The selected-area diffraction pattern showed that the deposited films exhibited a polycrystalline microstructure. All films exhibited ZST (111) orientation perpendicular to the substrate surface and the grain size as well as the deposition rate of the film increased with the increase in both the rf power and the substrate temperature. Optical transmittance spectroscopy further revealed high transparency (over 60%) in the visible region of the spectrum.

Effects of Film Thickness on Resistive Switching Characteristics of ZnO Based ReRAM

2013 ◽  
Vol 721 ◽  
pp. 194-198 ◽  
Author(s):  
Jun Hua Xi ◽  
Xue Ping Chen ◽  
Hong Xia Li ◽  
Jun Zhang ◽  
Zhen Guo Ji
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Resistive Switching ◽  
Random Access ◽  
Resistive Random Access Memory ◽  
Zno Thin Films ◽  
Forming Process ◽  
Heavily Doped ◽  
Switching Characteristics ◽  
Unipolar Resistive Switching

ZnO thin films were deposited on heavily doped silicon wafer by DC magnetron sputtering and the Cu electrodes were evaporated on ZnO/ n+-Si by electric beam evaporation to get Cu/ZnO/n+-Si resistive random access memory (ReRAM). The forming, reset and set processes of the devices were investigated using filamentary model. The effects of film thickness on the crystalline structure of the ZnO thin films and the resistive switching characteristics of the fabricated devices were investigated. The diffraction peak intensity and crystal size increased with increasing film thickness, which shows better crystallization. Cu/ZnO/n+-Si structured device exhibits reversible and steady unipolar resistive switching behaviors. The film thickness had great effect on the forming process of the prepared devices, while the values of Vset increased and Vreset varied little with increasing the film thickness.

Optical Properties of Anatase, Rutile and Amorphous Phases of TiO2 Thin Films Grown at Room Temperature by RF Magnetron Sputtering

2002 ◽  
Vol 755 ◽  
Author(s):  
V. M. Naik ◽  
D. Haddad ◽  
R. Naik ◽  
J. Benci ◽  
G. W. Auner
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
Absorption Data ◽  
Amorphous Phases ◽  
Glass Substrates ◽  
A Value ◽  
Value Range

ABSTRACTAnatase (A), rutile (R) and amorphous phase TiO2 thin films have been prepared by RF magnetron sputtering on unheated glass substrates by controlling the total pressure of sputtering gases (Ar + O2) and the substrate bias. The crystal structures of the films were confirmed by x-ray diffraction and Raman scattering. The analysis of optical absorption data for A- TiO2 film shows an energy bandgap (Eg) of 3.2 eV (indirect extrapolation) and ∼ 3.5 eV (direct extrapolation). On the other hand, R-TiO2 film shows Eg ∼ 2.9 eV (indirect) and 3.2 eV (direct). The latter film also shows the presence of amorphous regions with Eg ∼ 3.0 eV (indirect) and 3.8 eV (direct). The bandgap of both the films, obtained using indirect extrapolation, has a value range consistent with the previous measurements.

Effects of a Nb nanopin electrode on the resistive random-access memory switching characteristics of NiO thin films

Nanoscale ◽  
2018 ◽  
Vol 10 (28) ◽  
pp. 13443-13448 ◽  
Author(s):  
Yoonho Ahn ◽  
Hyun Wook Shin ◽  
Tae Hoon Lee ◽  
Woo-Hee Kim ◽  
Jong Yeog Son
Keyword(s):  
Thin Films ◽  
Bottom Electrode ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Memory Switching ◽  
Switching Characteristics

We report the effects of bottom electrode shapes on resistive random-access memory (RRAM) devices composed of Nb (bottom electrode)/NiO (dielectric)/Nb (top electrode) structures.

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