scholarly journals On Generalized Derivations ofBCI-Algebras and Their Properties

2014 ◽  
Vol 2014 ◽  
pp. 1-10
Author(s):  
L. Kamali Ardekani ◽  
B. Davvaz
Keyword(s):  
Generalized Derivations ◽  
Fundamental Properties ◽  
Left Derivation

We introduce the concept of(f,g)-derivations ofBCI-algebras and we investigate some fundamental properties and establish some results on(f,g)-derivations. Also, we treat to generalization of right derivation and left derivation ofBCI-algebras and consider some related properties.

Characterizations of linear mappings through zero products or zero Jordan products

2016 ◽  
Vol 31 ◽  
pp. 408-424 ◽  
Author(s):  
Guangyu An ◽  
Jiankui Li
Keyword(s):  
Linear Mapping ◽  
Generalized Derivations ◽  
Jordan Product ◽  
Unital Algebra ◽  
Left Derivation ◽  
Jordan Homomorphisms ◽  
Jordan Products ◽  
Lie Derivations

Let $\mathcal{A}$ be a unital algebra and $\mathcal{M}$ be a unital $\mathcal{A}$-bimodule. A characterization of generalized derivations and generalized Jordan derivations from $\mathcal{A}$ into $\mathcal{M}$, through zero products or zero Jordan products, is given. Suppose that $\mathcal{M}$ is a unital left $\mathcal{A}$-module. It is investigated when a linear mapping from $\mathcal{A}$ into $\mathcal{M}$ is a Jordan left derivation under certain conditions. It is also studied whether an algebra with a nontrivial idempotent is zero Jordan product determined, and Jordan homomorphisms, Lie homomorphisms and Lie derivations on zero Jordan product determined algebras are characterized.

Metastable Defects in the Amorphous Silicon-Germanium Alloys

2003 ◽  
Vol 762 ◽  
Author(s):  
J. David Cohen
Keyword(s):  
Amorphous Silicon ◽  
Silicon Germanium ◽  
Dangling Bonds ◽  
Annealing Behavior ◽  
Fundamental Properties ◽  
Silicon Materials ◽  
Salient Features ◽  
The Individual ◽  
Amorphous Silicon Germanium ◽  
Silicon Germanium Alloys

AbstractThis paper first briefly reviews a few of the early studies that established some of the salient features of light-induced degradation in a-Si,Ge:H. In particular, I discuss the fact that both Si and Ge metastable dangling bonds are involved. I then review some of the recent studies carried out by members of my laboratory concerning the details of degradation in the low Ge fraction alloys utilizing the modulated photocurrent method to monitor the individual changes in the Si and Ge deep defects. By relating the metastable creation and annealing behavior of these two types of defects, new insights into the fundamental properties of metastable defects have been obtained for amorphous silicon materials in general. I will conclude with a brief discussion of the microscopic mechanisms that may be responsible.

Fundamental Properties of Nanocellulose

2014 ◽  
Vol 68 (8) ◽  
pp. 837-840
Author(s):  
Tsuguyuki Saito ◽  
Yuri Kobayashi ◽  
Shuji Fujisawa ◽  
Chun-Nan Wu ◽  
Akira Isogai
Keyword(s):  
Fundamental Properties

Fundamental Properties of Surface Modified Pulp Sheet

2018 ◽  
Vol 72 (7) ◽  
pp. 715-720
Author(s):  
Yukinori Kobayashi ◽  
Yasutomo Noishiki ◽  
Manabu Yamamoto
Keyword(s):  
Fundamental Properties ◽  
Surface Modified
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