scholarly journals Improvement of Short-Circuit Current Density in p-Ni1−xO:Li/n-Si Heterojunction Solar Cells by Wet Chemical Etching

2014 ◽  
Vol 2014 ◽  
pp. 1-7
Author(s):  
Feng-Hao Hsu ◽  
Na-Fu Wang ◽  
Yu-Zen Tsai ◽  
Ming-Hao Chien ◽  
Mau-Phon Houng
Keyword(s):  
Solar Cells ◽  
Current Density ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Window Layer ◽  
Light Transmittance ◽  
Base Layer ◽  
Photoelectric Conversion ◽  
Heterojunction Solar Cells

This study confirms that the surface texturation of window layer (Al-Y codoped ZnO) etched by diluted HCl effectively increases conversion efficiency of p-Ni1−xO:Li/n-Si heterojunction solar cells. The results show that the short circuit current density (Jsc) of cell etched at 10 s increases about 8.5% compared to unetched cell, which also corresponds to the increase of efficient photoelectric conversion in NIR region as shown in external quantum efficiency spectra. It is attributed to the increase of light transmittance of AZOY thin films in the NIR region and the effective light path of the NIR wavelength, which results in increasing of light absorption in the base layer.

scholarly journals Effect of the Phosphorus Gettering on Si Heterojunction Solar Cells

2012 ◽  
Vol 2012 ◽  
pp. 1-7 ◽  
Author(s):  
Hyomin Park ◽  
Sung Ju Tark ◽  
Chan Seok Kim ◽  
Sungeun Park ◽  
Young Do Kim ◽  
...  
Keyword(s):  
Solar Cells ◽  
Current Density ◽  
Crystalline Silicon ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Solar Simulator ◽  
Heterojunction Solar Cells ◽  
Crystalline Silicon Solar Cells

To improve the efficiency of crystalline silicon solar cells, should be collected the excess carrier as much as possible. Therefore, minimizing the recombination both at the bulk and surface regions is important. Impurities make recombination sites and they are the major reason for recombination. Phosphorus (P) gettering was introduced to reduce metal impurities in the bulk region of Si wafers and then to improve the efficiency of Si heterojunction solar cells fabricated on the wafers. Resistivity of wafers was measured by a four-point probe method. Fill factor of solar cells was measured by a solar simulator. Saturation current and ideality factor were calculated from a dark current density-voltage graph. External quantum efficiency was analyzed to assess the effect of P gettering on the performance of solar cells. Minority bulk lifetime measured by microwave photoconductance decay increases from 368.3 to 660.8 μs. Open-circuit voltage and short-circuit current density increase from 577 to 598 mV and 27.8 to 29.8 mA/cm2, respectively. The efficiency of solar cells increases from 11.9 to 13.4%. P gettering will be feasible to improve the efficiency of Si heterojunction solar cells fabricated on P-doped Si wafers.

scholarly journals Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells

2020 ◽  
Vol 15 (1) ◽  
Author(s):  
Ching-Wen Chang ◽  
Paritosh V. Wadekar ◽  
Hui-Chun Huang ◽  
Quark Yung-Sung Chen ◽  
Yuh-Renn Wu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Current Density ◽  
Light Trapping ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Heterojunction Solar Cells

scholarly journals Effects of Different Doping Ratio of Cu Doped CdS on QDSCs Performance

2015 ◽  
Vol 2015 ◽  
pp. 1-4
Author(s):  
Xiaojun Zhu ◽  
Xiaoping Zou ◽  
Hongquan Zhou
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Short Circuit ◽  
Short Circuit Current ◽  
Short Circuit Current Density ◽  
Open Circuit ◽  
Photoelectric Conversion Efficiency ◽  
Photoelectric Conversion ◽  
Sensitized Solar Cells ◽  
Doping Ratio

We use the successive ionic layer adsorption and reaction (SILAR) method for the preparation of quantum dot sensitized solar cells, to improve the performance of solar cells by doping quantum dots. We tested the UV-Vis absorption spectrum of undoped CdS QDSCs and Cu doped CdS QDSCs with different doping ratios. The doping ratios of copper were 1 : 100, 1 : 500, and 1 : 1000, respectively. The experimental results show that, under the same SILAR cycle number, Cu doped CdS quantum dot sensitized solar cells have higher open circuit voltage, short circuit current density photoelectric conversion efficiency than undoped CdS quantum dots sensitized solar cells. Refinement of Cu doping ratio are 1 : 10, 1 : 100, 1 : 200, 1 : 500, and 1 : 1000. When the proportion of Cu and CdS is 1 : 10, all the parameters of the QDSCs reach the minimum value, and, with the decrease of the proportion, the short circuit current density, open circuit voltage, and the photoelectric conversion efficiency are all increased. When proportion is 1 : 500, all parameters reach the maximum values. While with further reduction of the doping ratio of Cu, the parameters of QDSCs have a decline tendency. The results showed that, in a certain range, the lower the doping ratio of Cu, the better the performance of quantum dot sensitized solar cell.

Sign in / Sign up

Export Citation Format

Share Document