scholarly journals Raman and FTIR Studies on PECVD Grown Ammonia-Free Amorphous Silicon Nitride Thin Films for Solar Cell Applications

2013 ◽  
Vol 2013 ◽  
pp. 1-4 ◽  
Author(s):  
Nafis Ahmed ◽  
Chandra Bhal Singh ◽  
S. Bhattacharya ◽  
S. Dhara ◽  
P. Balaji Bhargav
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Flow Rate ◽  
Chemical Vapour ◽  
Nitrogen Flow ◽  
Raman Analysis ◽  
Amorphous Silicon Nitride ◽  
Vis Spectroscopy ◽  
Hydrogenated Amorphous

Ammonia- (NH3-) free, hydrogenated amorphous silicon nitride (a-SiNx:H) thin films have been deposited using silane (SiH4) and nitrogen (N2) as source gases by plasma-enhanced chemical vapour deposition (PECVD). During the experiment, SiH4 flow rate has been kept constant at 5 sccm, whereas N2 flow rate has been varied from 2000 to 1600 sccm. The effect of nitrogen flow on SiNx:H films has been verified using Raman analysis studies. Fourier transform Infrared spectroscopy analysis has been carried out to identify all the possible modes of vibrations such as Si–N, Si–H, and N–H present in the films, and the effect of nitrogen flow on these parameters is correlated. The refractive index of the above-mentioned films has been calculated using UV-VIS spectroscopy measurements by Swanepoel’s method.

Photoluminescence analyses of hydrogenated amorphous silicon nitride thin films

2011 ◽  
Vol 131 (7) ◽  
pp. 1305-1311 ◽  
Author(s):  
Mustafa Anutgan ◽  
Tamila (Aliyeva) Anutgan ◽  
Ismail Atilgan ◽  
Bayram Katircioglu
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Silicon Nitride ◽  
Hydrogenated Amorphous

Optical and Structural Features of Silicon-Rich Hydrogenated Amorphous Silicon Nitride Thin Films

2011 ◽  
Vol 11 (12) ◽  
pp. 10733-10736
Author(s):  
Sarab Preet Singh ◽  
Claudio J. Otón ◽  
P. Srivastava ◽  
Santanu Ghosh ◽  
G. Vijaya Prakash
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Structural Features ◽  
Amorphous Silicon Nitride ◽  
Hydrogenated Amorphous

Longitudinal Vibrational Absorption Modes of Hydrogenated Amorphous Silicon Nitride Thin Films

1998 ◽  
Vol 507 ◽  
Author(s):  
Tong Li ◽  
Jerzy Kanicki
Keyword(s):  
Thin Films ◽  
Absorption Spectrum ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Longitudinal Mode ◽  
Transverse Mode ◽  
Amorphous Silicon Nitride ◽  
Vibrational Absorption ◽  
Hydrogenated Amorphous

ABSTRACTWe have identified longitudinal and transverse optical modes of Si-N bond in vibrational absorption spectrum of hydrogenated amorphous silicon nitride thin films. The locations of longitudinal optical resonances coincide with transverse mode of Si-O and closely neighbor bending modes of N-H, Si-H2 bond. Furthermore, the conventionally assigned asymmetric and symmetric stretching modes of Si-N bond are merely transverse modes of Si-N bond. Features of pure longitudinal vibrational modes can be revealed by subtracting appropriately scaled transverse mode components from the vibrational absorption spectrum. Analysis of the longitudinal spectrum indicates that, in addition to their association with Si-N bond, the density of the peak located at about 1215 cm−1 is also well correlated to hydrogen and nitride content in the film, while the density of the peak located at about 880 cm−1 is closed related to silicon density in the film. Peak located at about 1040 cm−1 is the longitudinal mode associated with Si-N bond.

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