scholarly journals Noise Performance of Heterojunction DDR MITATT Devices Based on at W-Band

2013 ◽  
Vol 2013 ◽  
pp. 1-7 ◽  
Author(s):  
Suranjana Banerjee ◽  
Aritra Acharyya ◽  
J. P. Banerjee
Keyword(s):  
Spectral Density ◽  
Millimeter Wave ◽  
Power Output ◽  
Drift Region ◽  
Noise Performance ◽  
Device Structure ◽  
Noise Spectral Density ◽  
W Band ◽  
Noise Measure ◽  
Wave Properties

Noise performance of different structures of anisotype heterojunction double-drift region (DDR) mixed tunneling and avalanche transit time (MITATT) devices has been studied. The devices are designed for operation at millimeter-wave W-band frequencies. A simulation model has been developed to study the noise spectral density and noise measure of the device. Two different mole fractions and of Ge and corresponding four types of device structure are considered for the simulation. The results show that the -Si heterojunction DDR structure of MITATT device excels all other structures as regards noise spectral density (  sec) and noise measure (33.09 dB) as well as millimeter-wave properties such as DC-to-RF conversion efficiency (20.15%) and CW power output (773.29 mW).

Fully polarimetric passive W-band millimeter wave imager for wide area search

2013 ◽  
Author(s):  
Jonathan Tedeschi ◽  
Bruce Bernacki ◽  
Dave Sheen ◽  
Jim Kelly ◽  
Doug McMakin
Keyword(s):  
Millimeter Wave ◽  
Wide Area ◽  
W Band

MILLIMETER WAVE TO TERAHERTZ IN CMOS

2009 ◽  
Vol 19 (01) ◽  
pp. 55-67 ◽  
Author(s):  
K. K. O ◽  
S. SANKARAN ◽  
C. CAO ◽  
E.-Y. SEOK ◽  
D. SHIM ◽  
...  
Keyword(s):  
Output Power ◽  
Millimeter Wave ◽  
Fundamental Mode ◽  
Cmos Circuits ◽  
Noise Performance ◽  
Mos Transistors

The feasibility of CMOS circuits operating at frequencies in the upper millimeter wave and low sub-millimeter frequency regions has been demonstrated. A 140-GHz fundamental mode VCO in 90-nm CMOS, a 410-GHz push-push VCO in 45-nm CMOS, and a 180-GHz detector circuit in 130-nm CMOS have been demonstrated. With the continued scaling of MOS transistors, 1-THz CMOS circuits will be possible. Though these results are significant, output power of signal generators must be increased and acceptable noise performance of detectors must be achieved in order to demonstrate the applicability of CMOS for implementing practical terahertz systems.

High-speed LiNbO3 modulator for W-band millimeter-wave detection

2007 ◽  
Author(s):  
C. J. Huang ◽  
C. A. Schuetz ◽  
R. Shireen ◽  
S. Shi ◽  
D. W. Prather
Keyword(s):  
Millimeter Wave ◽  
High Speed ◽  
Wave Detection ◽  
W Band

Millimeter-Wave Properties and Structure of Gradient Co–Ir Films Deposited on Opal Matrix

2014 ◽  
Vol 13 (1) ◽  
pp. 3-9 ◽  
Author(s):  
Anatoly B. Rinkevich ◽  
Mikhail I. Samoilovich ◽  
Svetlana M. Klescheva ◽  
Dmitry V. Perov ◽  
Albert M. Burkhanov ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Opal Matrix ◽  
Wave Properties

Improved fabrication and noise performance of silicon double-drift millimeter-wave IMPATT diodes

1973 ◽  
Author(s):  
C.N. Dunn ◽  
B.I. Morris ◽  
C.L. Paulnack ◽  
T.E. Seidel ◽  
L.J. Smith
Keyword(s):  
Millimeter Wave ◽  
Noise Performance ◽  
Impatt Diodes
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