scholarly journals DFAL: Diode-Free Adiabatic Logic Circuits

2013 ◽  
Vol 2013 ◽  
pp. 1-12 ◽  
Author(s):  
Shipra Upadhyay ◽  
R. A. Mishra ◽  
R. K. Nagaria ◽  
S. P. Singh
Keyword(s):  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Mathematical Expression ◽  
Logic Gates ◽  
Cmos Technology ◽  
Circuit Performance ◽  
Adiabatic Circuit ◽  
Output Amplitude ◽  
Adiabatic Logic

The manufacturing advances in semiconductor processing (continually reducing minimum feature size of transistors, increased complexity and ever increasing number of devices on a given IC) change the design challenges for circuit designers in CMOS technology. The important challenges are low power high speed computational devices. In this paper a novel low power adiabatic circuit topology is proposed. By removing the diode from the charging and discharging path, higher output amplitude is achieved and also the power dissipation of the diodes is eliminated. A mathematical expression has been developed to explain the energy dissipation in the proposed circuit. Performance of the proposed logic is analyzed and compared with CMOS and reported adiabatic logic styles. Also the layout of proposed inverter circuit has been drawn. Subsequently proposed topology-based various logic gates, combinational and sequential circuits and multiplier circuit are designed and simulated. The simulations were performed by VIRTUOSO SPECTRE simulator of Cadence in 0.18 μm UMC technology. In proposed inverter the energy efficiency has been improved to almost 60% up to 100 MHz in comparison to conventional CMOS circuits. The present research provides low power high speed results up to 100 MHz, and proposal has proven to be used in power aware high-performance VLSI circuitry.

scholarly journals Performance Analysis of Modified Drain Gating Techniques for Low Power and High Speed Arithmetic Circuits

VLSI Design ◽  
2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Shikha Panwar ◽  
Mayuresh Piske ◽  
Aatreya Vivek Madgula
Keyword(s):  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Room Temperature ◽  
Supply Voltage ◽  
Cmos Technology ◽  
Propagation Delay ◽  
Cmos Circuits ◽  
Output Node ◽  
Critical Sections

This paper presents several high performance and low power techniques for CMOS circuits. In these design methodologies, drain gating technique and its variations are modified by adding an additional NMOS sleep transistor at the output node which helps in faster discharge and thereby providing higher speed. In order to achieve high performance, the proposed design techniques trade power for performance in the delay critical sections of the circuit. Intensive simulations are performed using Cadence Virtuoso in a 45 nm standard CMOS technology at room temperature with supply voltage of 1.2 V. Comparative analysis of the present circuits with standard CMOS circuits shows smaller propagation delay and lesser power consumption.

scholarly journals Low power CMOS based Self Controlled Precharge Free Content Addressable Memory with Minimum area for Image Processing Devices

2020 ◽  
Vol 14 ◽  
Keyword(s):  
Image Processing ◽  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Search Time ◽  
Cmos Technology ◽  
Vital Role ◽  
Computer Interface ◽  
Human Computer Interface ◽  
Content Addressable Memory

Image processing devices plays a vital role in several applications like medical, security, biometric etc. The devices ranges from portable size to larger machines with and without Human Computer Interface possibilities. As the image processing and human computer interface system application requires higher memory requirements, the power and area should be small. Searching of data is a high priority work in image classification. To perform high speed search through hardware Content Addressable Memory is used. But the circuit suffers from higher power consumption, precharging issues and low performance. For longer word length the elimination of precharge is needed. So for high speed applications self-controlled precharge-free CAM (SCPF-CAM) is suitable. A 4T hybrid self controlled pre charge free Content Addressable Memory is proposed in this paper using CMOS 32nm technology. The observation shows that the circuit works at high speed, minimizes the search time and has high performance operation. When compared to the conventional SCPF-CAM, 8T CAM the proposed design reduces the number of transistors. The reduction in area is about approximately 20% and can be used in low power and low energy applications. In Synopsis HSPICE Predictive technology models were used for the implementation in 32nm CMOS technology. The work will be extended in future using FinFET technology where the leakage current can be minimized.

scholarly journals High-Speed Wide-Range True-Single-Phase-Clock CMOS Dual Modulus Prescaler

Electronics ◽  
2020 ◽  
Vol 9 (5) ◽  
pp. 725
Author(s):  
Xiaoran Li ◽  
Jian Gao ◽  
Zhiming Chen ◽  
Xinghua Wang
Keyword(s):  
Low Power ◽  
High Speed ◽  
Single Phase ◽  
Logic Gates ◽  
Cmos Technology ◽  
Propagation Delay ◽  
Operating Frequency ◽  
Wide Range ◽  
Measurement Results ◽  
Phase Clock

This manuscript presents two novel low-power high-speed true-single-phase-clock (TSPC) prescalers with division ratios of 2/3 and 4/5, respectively, in a standard 90-nm CMOS technology. The logic gates incorporated between the D-flip-flops (DFFs) of a conventional 2/3 prescaler are modified to reduce the propagation delay and hence increase the maximum operating frequency. The measurement results show that the proposed divide-by-2/3 and divide-by-4/5 prescalers can operate up to 17 GHz and 15.3 GHz, respectively, which increase by 5.4 GHz and 4.3 GHz compared with conventional TSPC prescalers. The power of the proposed divide-by-2/3 prescaler is 0.67 mW and 0.92 mW, and 0.87 mW and 1.06 mW for the proposed divide-by-4/5 prescaler. The chip occupies an area of 20 × 35 μm2 and 20 × 50 μm2 for the proposed divide-by-2/3 and divide-by-4/5 prescalers.

scholarly journals Low power design of ultra wideband PLL using 90 nm CMOS technology

2020 ◽  
Vol 20 (2) ◽  
pp. 727
Author(s):  
Fadhilah Binti Noor Al Amin ◽  
Nabihah Ahmad ◽  
Siti Hawa Ruslan
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Large Scale ◽  
Vlsi Design ◽  
Electronic System ◽  
Low Power Design ◽  
Cmos Technology ◽  
Ultra Wideband

<span>The rapid growth of the electronic system has become one of the challenges in the high performance of Very Large Scale Integration (VLSI) design and has contributed to the evolution of Phase Locked Loop (PLL) system design as one of the inevitable and significant necessities in the modern days. This design focus on the development of PLL system that can operate at a high performance within the Ultra-Wideband (UWB) frequency but consume low power that may be useful for future device implementation in the communication system. All proposed sub modules of PLL is highly suitable for low power and high speed application as each of them consumes overall power consumption around 2 µW until 1 mW with frequency from 3.1 GHz to 10.6 GHz. All the design architecture, schematic, simulation and analysis are implemented using Synopsys Tool in 90 nm CMOS technology. Through the overall analysis, it can be concluded that this proposed sub modules design of the PLL system has better performance compared to previous work in terms of power consumption and frequency.</span>

Performance Analysis of Various Multipliers Using 8T-full Adder with 180nm Technology

2020 ◽  
Vol 13 (6) ◽  
pp. 864-870
Author(s):  
Sai Venkatramana Prasada G.S ◽  
G. Seshikala ◽  
S. Niranjana
Keyword(s):  
Low Power ◽  
Power Dissipation ◽  
High Speed ◽  
High Performance ◽  
Full Adder ◽  
Fundamental Operation ◽  
Wallace Tree ◽  
Power Delay Product ◽  
The Comparative Study ◽  
Wallace Tree Multiplier

Background: This paper presents the comparative study of power dissipation, delay and power delay product (PDP) of different full adders and multiplier designs. Methods: Full adder is the fundamental operation for any processors, DSP architectures and VLSI systems. Here ten different full adder structures were analyzed for their best performance using a Mentor Graphics tool with 180nm technology. Results: From the analysis result high performance full adder is extracted for further higher level designs. 8T full adder exhibits high speed, low power delay and low power delay product and hence it is considered to construct four different multiplier designs, such as Array multiplier, Baugh Wooley multiplier, Braun multiplier and Wallace Tree multiplier. These different structures of multipliers were designed using 8T full adder and simulated using Mentor Graphics tool in a constant W/L aspect ratio. Conclusion: From the analysis, it is concluded that Wallace Tree multiplier is the high speed multiplier but dissipates comparatively high power. Baugh Wooley multiplier dissipates less power but exhibits more time delay and low PDP.

scholarly journals Ultracompact and low-power-consumption silicon thermo-optic switch for high-speed data

Nanophotonics ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 937-945
Author(s):  
Ruihuan Zhang ◽  
Yu He ◽  
Yong Zhang ◽  
Shaohua An ◽  
Qingming Zhu ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Pulse Amplitude ◽  
Telecommunication Networks ◽  
Low Power Consumption ◽  
Power Efficient ◽  
High Speed Data ◽  
On Chip

AbstractUltracompact and low-power-consumption optical switches are desired for high-performance telecommunication networks and data centers. Here, we demonstrate an on-chip power-efficient 2 × 2 thermo-optic switch unit by using a suspended photonic crystal nanobeam structure. A submilliwatt switching power of 0.15 mW is obtained with a tuning efficiency of 7.71 nm/mW in a compact footprint of 60 μm × 16 μm. The bandwidth of the switch is properly designed for a four-level pulse amplitude modulation signal with a 124 Gb/s raw data rate. To the best of our knowledge, the proposed switch is the most power-efficient resonator-based thermo-optic switch unit with the highest tuning efficiency and data ever reported.

scholarly journals The Demonstration of S2P (Serial-to-Parallel) Converter with Address Allocation Method Using 28 nm CMOS Technology

2021 ◽  
Vol 11 (1) ◽  
pp. 429
Author(s):  
Min-Su Kim ◽  
Youngoo Yang ◽  
Hyungmo Koo ◽  
Hansik Oh
Keyword(s):  
Integrated Circuits ◽  
Embedded System ◽  
Low Power ◽  
High Speed ◽  
Cmos Technology ◽  
Clock Frequency ◽  
Clock Generation ◽  
Allocation Method ◽  
Evaluation Board ◽  
28 Nm

To improve the performance of analog, RF, and digital integrated circuits, the cutting-edge advanced CMOS technology has been widely utilized. We successfully designed and implemented a high-speed and low-power serial-to-parallel (S2P) converter for 5G applications based on the 28 nm CMOS technology. It can update data easily and quickly using the proposed address allocation method. To verify the performances, an embedded system (NI-FPGA) for fast clock generation on the evaluation board level was also used. The proposed S2P converter circuit shows extremely low power consumption of 28.1 uW at 0.91 V with a core die area of 60 × 60 μm2 and operates successfully over a wide clock frequency range from 5 M to 40 MHz.

LOW-POWER, PARALLEL INTERFACE WITH CONTINUOUS-TIME ADAPTIVE PASSIVE EQUALIZER AND CROSSTALK CANCELLATION

2005 ◽  
Vol 15 (02) ◽  
pp. 459-476
Author(s):  
C. PATRICK YUE ◽  
JAEJIN PARK ◽  
RUIFENG SUN ◽  
L. RICK CARLEY ◽  
FRANK O'MAHONY
Keyword(s):  
Low Power ◽  
Electromagnetic Interference ◽  
Continuous Time ◽  
High Speed ◽  
High Performance ◽  
Process Variations ◽  
Cmos Process ◽  
Power Circuit ◽  
Crosstalk Cancellation ◽  
Circuit Components

This paper presents the low-power circuit techniques suitable for high-speed digital parallel interfaces each operating at over 10 Gbps. One potential application for such high-performance I/Os is the interface between the channel IC and the magnetic read head in future compact hard disk systems. First, a crosstalk cancellation technique using a novel data encoding scheme is introduced to suppress electromagnetic interference (EMI) generated by the adjacent parallel I/Os . This technique is implemented utilizing a novel 8-4-PAM signaling with a data look-ahead algorithm. The key circuit components in the high-speed interface transceiver including the receive sampler, the phase interpolator, and the transmitter output driver are described in detail. Designed in a 0.13-μm digital CMOS process, the transceiver consumes 310 mW per 10-Gps channel from a I-V supply based on simulation results. Next, a 20-Gbps continuous-time adaptive passive equalizer utilizing on-chip lumped RLC components is described. Passive equalizers offer the advantages of higher bandwidth and lower power consumption compared with conventional designs using active filter. A low-power, continuous-time servo loop is designed to automatically adjust the equalizer frequency response for the optimal gain compensation. The equalizer not only adapts to different channel characteristics, but also accommodates temperature and process variations. Implemented in a 0.25-μm, 1P6M BiCMOS process, the equalizer can compensate up to 20 dB of loss at 10 GHz while only consumes 32 mW from a 2.5-V supply.

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Speed ◽  
High Performance ◽  
Gate Oxide ◽  
Chemical Cleaning ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

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